المؤلفون: Vais, A., Kumar, A., Boccardi, G., Yadav, S., Mols, Y., Alcotte, R., Vermeersch, B., Ingels, M., Peralagu, U., Neve, C. Roda, Ghyselen, B., Parvais, B., Wambacq, P., Kunert, B., Collaert, N.

المصدر: Key enabling technologies for future wireless, wired, optical and satcom applications ; page 27-37 ; ISBN 9788770046664

الاتاحة: http://dx.doi.org/10.1201/9781003587309-4

المؤلفون: Yadav, S., Cardinael, Pieter, Zhao, M., Vondkar, K., Peralagu, U., Alian, A., Rodriguez, R., Khaled, A., Makovejev, S., Ekoga, E., Lederer, Dimitri, Raskin, Jean-Pierre, Parvais, B., Collaert, N., The 242nd ElectroChemical Society Meeting – ECS 2022

المساهمون: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

Relation: boreal:270888; http://hdl.handle.net/2078.1/270888

الاتاحة: http://hdl.handle.net/2078.1/270888
https://doi.org/10.1149/MA2022-02321208mtgabs

المؤلفون: O'Sullivan, B. J., Alian, A., Sibaja-Hernandez, A., Franco, J., Yadav, S., Yu, H., Rathi, A., Peralagu, U., Chasin, A., Parvais, B., Collaert, N.

المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48228.2024.10529379
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529379.pdf?arnumber=10529379

المؤلفون: Huang, P., Luc, Q. H., Sibaja-Hernandez, A., Ko, H. L., Wu, J. Y., Tran, N. A., Collaert, N., Chang, E. Y.

المصدر: IEEE Journal of the Electron Devices Society ; volume 10, page 854-859 ; ISSN 2168-6734

الاتاحة: http://dx.doi.org/10.1109/jeds.2022.3212377
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09913223.pdf?arnumber=9913223

المؤلفون: Cardinael, Pieter, Yadav, S., Zhao, M., Rack, Martin, Lederer, Dimitri, Collaert, N., Parvais, B., Raskin, Jean-Pierre, European Solid-State Device Research Conference (ESSDERC 2021)

المساهمون: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)

مصطلحات موضوعية: GaN-on-Si, HEMTs, RF losses, effective substrate resistivity, harmonic distortion, C-doped III-Ns

Relation: info:eu-repo/grantAgreement/FNRS/FRIA/; boreal:250702; http://hdl.handle.net/2078.1/250702

الاتاحة: http://hdl.handle.net/2078.1/250702
https://doi.org/10.1109/ESSDERC53440.2021.9631822

المؤلفون: Rahman, R., Lansbergen, G. P., Verduijn, J., Tettamanzi, G. C., Park, S. H., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.

المصدر: Physical Review B 84, 115428 (2011)

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/1107.2701

المؤلفون: Lansbergen, G. P., Rahman, R., Verduijn, J., Tettamanzi, G. C., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.

المصدر: Physical Review Letters 107, 136602 (2011)

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/1008.1381

المؤلفون: Verduijn, J., Tettamanzi, G. C., Lansbergen, G. P., Collaert, N., Biesemans, S., Rogge, S.

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons

URL الوصول: http://arxiv.org/abs/0912.2196

المؤلفون: Lansbergen, G. P., Tettamanzi, G. C., Verduijn, J., Collaert, N., Biesemans, S., Blaauboer, M., Rogge, S.

المصدر: Nano Letters 10 (2), 455-460 (2010)

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/0909.5602

المؤلفون: Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.

المصدر: Phys. Rev. Lett. 97, 206805 (2006)

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/cond-mat/0608159

المؤلفون: Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.

المصدر: Appl. Phys. Lett. 90, 073502 (2007)

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/cond-mat/0603430

المؤلفون: Yadav, S., Cardinael, Pieter, Zhao, M., Vondkar, K., Khaled, A., Rodriguez, R., Vermeersch, B., Makovejev, S., Ekoga, E., Pottrain, A., Waldron, N., Raskin, Jean-Pierre, Parvais, B., Collaert, N., 2020 IEEE International Electron Devices Meeting (IEDM)

المساهمون: imec, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

المصدر: International Electron Devices Meeting. I E D M Technical Digest

مصطلحات موضوعية: Radio frequency, Implants, HEMTs, Conductivity, Coplanar waveguides, Substrates

Relation: boreal:250699; http://hdl.handle.net/2078.1/250699; urn:ISSN:0163-1918

الاتاحة: http://hdl.handle.net/2078.1/250699
https://doi.org/10.1109/iedm13553.2020.9371893

المؤلفون: Cardinael, Pieter, Yadav, S., Zhao, M., Vondkar, K., Khaled, A., Rodriguez, R., Vermeersch, B., Makovejev, S., Ekoga, E., Pottrain, A., Waldron, N., Raskin, Jean-Pierre, Parvais, B., Collaert, N.

المساهمون: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

Relation: boreal:269273; http://hdl.handle.net/2078.1/269273

الاتاحة: http://hdl.handle.net/2078.1/269273

المؤلفون: Huang, P., Luc, Q. H., Sibaja-Hernandez, A., Hsu, C. W., Wu, J. Y., Ko, H. L., Tran, N. A., Collaert, N., Chang, E. Y.

المساهمون: National Chung-Shan Institute of Science and Technology, Ministry of Science and Technology, Taiwan, Ministry of Education

المصدر: AIP Advances ; volume 11, issue 1 ; ISSN 2158-3226

الاتاحة: http://dx.doi.org/10.1063/5.0037378
https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0037378/12830718/015050_1_online.pdf

المؤلفون: Ramesh, S., Ivanov, Ts., Sibaja-Hernandez, A., Alian, A., Camerotto, E., Milenin, A., Pinna, N., El Kazzi, S., Lin, D., Lagrain, P., Favia, P., Bender, H., Collaert, N., De Meyer, K.

المصدر: Journal of Applied Physics; 7/14/2022, Vol. 132 Issue 2, p1-14, 14p

مصطلحات موضوعية: FIELD-effect transistors, NANOWIRES, PLASMA etching, SURFACE states, LOW temperatures, OHMIC contacts

المؤلفون: Hsu, PC (Brent), Simoen, Eddy, Eneman, G, Merckling, C, Alian, A, Langer, R, Collaert, N, Heyns, M

المصدر: Journal of Physics : Conference Series ; ISSN: 1742-6588 ; ISSN: 1742-6596

مصطلحات موضوعية: Technology and Engineering, Physics and Astronomy

وصف الملف: application/pdf

Relation: https://biblio.ugent.be/publication/8620555; http://hdl.handle.net/1854/LU-8620555; http://dx.doi.org/10.1088/1742-6596/1190/1/012014; https://biblio.ugent.be/publication/8620555/file/8620559

الاتاحة: https://biblio.ugent.be/publication/8620555
http://hdl.handle.net/1854/LU-8620555
https://doi.org/10.1088/1742-6596/1190/1/012014
https://biblio.ugent.be/publication/8620555/file/8620559

المؤلفون: Yadav, S., Alian, A., ElKashlan, R., O’Sullivan, B. J., Khaled, A., Kazemi, B., Peralagu, U., Banerjee, S., Parvais, B., Collaert, N.

المصدر: 2023 International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm45741.2023.10413712
http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413712.pdf?arnumber=10413712

المؤلفون: Cretu, B, Boudier, D., Simoen, E., Veloso, A., Collaert, N., Claeys, C.

المساهمون: Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), IMEC (IMEC), Catholic University of Leuven = Katholieke Universiteit Leuven (KU Leuven)

المصدر: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.science/hal-02475438 ; Solid-State Electronics, 2020, pp.107771. ⟨10.1016/j.sse.2020.107771⟩.

مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-02475438; https://hal.science/hal-02475438; https://hal.science/hal-02475438/document; https://hal.science/hal-02475438/file/S0038110119306173.pdf; PII: S0038-1101(19)30617-3

الاتاحة: https://hal.science/hal-02475438
https://hal.science/hal-02475438/document
https://hal.science/hal-02475438/file/S0038110119306173.pdf
https://doi.org/10.1016/j.sse.2020.107771

المؤلفون: Goncalves, G. V., Oliveira, A. V., Agopian, P. G. D., Martino, J. A., Witters, L., Mitard, J., Collaert, N., Claeys, C., Simoen, E., IEEE

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: FinFET, germanium, p-type, STI last

Relation: 2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro); 2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2018.; http://hdl.handle.net/11449/184137; WOS:000451195800028; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/184137

المؤلفون: Bordallo, C., Martino, J., Agopian, P., Alian, A., Mols, Y., Rooyackers, R., Vandooren, A., Verhulst, A., Simoen, E., Claeys, C., Collaert, N.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Analog Parameters, III-V materials, Temperature, TFET

وصف الملف: 1-3

Relation: 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017; http://dx.doi.org/10.1109/S3S.2017.8309256; 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, v. 2018-March, p. 1-3.; http://hdl.handle.net/11449/171055; 2-s2.0-85047727174

الاتاحة: http://hdl.handle.net/11449/171055
https://doi.org/10.1109/S3S.2017.8309256