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1
المؤلفون: Manan Mehta, Merrill Devin, S. Ghose, X. Weng, H. Li, Anand Portland Murthy, Ashish Agrawal, Jessica M. Torres, Matthew V. Metz, A. A. Oni, S. Vishwanath, Chouksey Siddharth, Jack Portland Kavalieros, W. Rachmady
المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: Electron mobility, Materials science, business.industry, Transistor, law.invention, PMOS logic, Silicon-germanium, chemistry.chemical_compound, chemistry, Operating temperature, law, Gate oxide, Logic gate, Optoelectronics, business, Nanosheet
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2
المؤلفون: Ibrahim Ban, Robert L. Bristol, Han Wui Then, Pratik Koirala, Tronic Tristan A, Kimin Jun, Rajat Kanti Paul, Nicole K. Thomas, Chouksey Siddharth, Hafez Walid M, D. Staines, W. Rachmady, P. Agababov, Fischer Paul B, T. Talukdar, Kevin Lin, T. Michaelos, Huang Cheng-Ying, Brandon Holybee, B. Krist, Marko Radosavljevic, Manish Chandhok, J. Peck
المصدر: 2020 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, Transistor, Schottky diode, chemistry.chemical_element, Gallium nitride, 01 natural sciences, law.invention, chemistry.chemical_compound, chemistry, law, Logic gate, 0103 physical sciences, Optoelectronics, Wafer, Cascode, business, NMOS logic
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3
المؤلفون: W. Rachmady, Ashish Agrawal, Huang Cheng-Ying, B. Krist, Matthew V. Metz, Chouksey Siddharth, Jack Portland Kavalieros, A. A. Oni, Jessica M. Torres, Kimin Jun, Rajat Kanti Paul, Seung Hoon Sung, Hui Jae Yoo, T. Talukdar, G. Elbaz, Wong Lawrence D, Mueller Brennen, Robert B. Turkot, Fischer Paul B, P. Sears, Benjamin Chu-Kung, G. Dewey, Phan Anh, T. Michaelos
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Fabrication, Materials science, Silicon, business.industry, Stacking, chemistry.chemical_element, Germanium, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, PMOS logic, chemistry, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Inverter, 0210 nano-technology, business, Metal gate, NMOS logic, Hardware_LOGICDESIGN
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4
المؤلفون: Sansaptak Dasgupta, Robert L. Bristol, D. Staines, Kimin Jun, Fischer Paul B, J. Peck, Rajat Kanti Paul, Hafez Walid M, Nicole K. Thomas, Ibrahim Ban, Huang Cheng-Ying, Mueller Brennen, W. Rachmady, T. Michaelos, Kevin Lin, Marko Radosavljevic, Chouksey Siddharth, Manish Chandhok, Nidhi Nidhi, Tronic Tristan A, B. Krist, Han Wui Then, P. Agababov, Brandon Holybee, T. Talukdar
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Amplifier, Transistor, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, law.invention, PMOS logic, RF switch, CMOS, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Metal gate, NMOS logic, High-κ dielectric
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5Academic Journal
المؤلفون: Chouksey, Siddharth, Fossum, Jerry G., Agrawal, Shishir
المصدر: IEEE Transactions on Electron Devices ; volume 57, issue 9, page 2073-2079 ; ISSN 0018-9383 1557-9646
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6Academic Journal
المؤلفون: Chouksey, Siddharth
مصطلحات موضوعية: dibl, dice, performance, scalability, Electrical and Computer Engineering -- Dissertations, Academic, Electrical and Computer Engineering thesis, Ph.D
جغرافية الموضوع: UF
وصف الملف: 1 online resource (100 p.)
Relation: http://ufdc.ufl.edu/UFE0041075/00001
الاتاحة: http://ufdc.ufl.edu/UFE0041075/00001
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7
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8Academic Journal
المؤلفون: Chouksey, Siddharth1, Fossum, Jerry G.1 fossum@tec.ufl.edu, Behnam, Ashkan1, Agrawal, Shishir1, Mathew, Leo2
المصدر: IEEE Transactions on Electron Devices. Oct2009, Vol. 56 Issue 10, p2348-2353. 6p. 2 Charts, 3 Graphs.
مصطلحات موضوعية: ELECTRIC potential, NANOELECTRONICS, SEMICONDUCTOR doping, COMPLEMENTARY metal oxide semiconductors, ELECTRIC currents
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9Academic Journal
المؤلفون: Chouksey, Siddharth1 sidc@tec.ufl.edu, Fossum, Jerry G.1 fossum@tec.ufl.edu
المصدر: IEEE Transactions on Electron Devices. Mar2008, Vol. 55 Issue 3, p796-802. 7p. 2 Diagrams, 1 Chart, 5 Graphs.
مصطلحات موضوعية: *SIMULATION methods & models, METAL oxide semiconductor field-effect transistors, NANOSTRUCTURES, CAPACITANCE meters, COMPLEMENTARY metal oxide semiconductors, LOGIC circuits