يعرض 1 - 20 نتائج من 300 نتيجة بحث عن '"Cho, Kyoungah"', وقت الاستعلام: 0.58s تنقيح النتائج
  1. 1
    Academic Journal
    Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings

    المؤلفون: Kang, Mingu, Cho, Kyoungah, Seol, Minhyeok, Kim, Sangsub, Kim, Sangsig

    المصدر: Heliyon ; volume 10, issue 13, page e34134 ; ISSN 2405-8440

    الاتاحة: https://doi.org/10.1016/j.heliyon.2024.e34134
    https://api.elsevier.com/content/article/PII:S240584402410165X?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S240584402410165X?httpAccept=text/plain

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  2. 2
    Academic Journal
    Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation

    المؤلفون: Ryu, Seungho, Kang, Mingu, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea

    المصدر: Advanced Materials Technologies ; volume 9, issue 15 ; ISSN 2365-709X 2365-709X

    الاتاحة: http://dx.doi.org/10.1002/admt.202302209
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202302209

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  3. 3
    Academic Journal
    Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing

    المؤلفون: Son, Jaemin, Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig

    المساهمون: Ministry of Science and ICT, South Korea, Korea University

    المصدر: Advanced Electronic Materials ; volume 10, issue 7 ; ISSN 2199-160X 2199-160X

    الاتاحة: http://dx.doi.org/10.1002/aelm.202300815
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202300815

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  4. 4
    Academic Journal
    Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics

    المؤلفون: Shin, Yunwoo, Son, Jaemin, Jeon, Juhee, Ryu, Seungho, Cho, Kyoungah, Kim, Sangsig

    المساهمون: Samsung

    المصدر: Advanced Electronic Materials ; volume 10, issue 6 ; ISSN 2199-160X 2199-160X

    الاتاحة: http://dx.doi.org/10.1002/aelm.202300764
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202300764

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  5. 5
    Academic Journal
    Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing

    المؤلفون: Shin, Yunwoo, Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea, Samsung, Korea University

    المصدر: Advanced Electronic Materials ; volume 10, issue 9 ; ISSN 2199-160X 2199-160X

    الاتاحة: http://dx.doi.org/10.1002/aelm.202400061
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202400061

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  6. 6
    Academic Journal
    Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

    المؤلفون: Han, Jongseong, Son, Jaemin, Ryu, Seungho, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea (NRF) grant funded by the Korean government, Brain Korea 21 Plus Project, Korea University Grant

    المصدر: Scientific Reports ; volume 14, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-024-57290-w
    https://www.nature.com/articles/s41598-024-57290-w.pdf
    https://www.nature.com/articles/s41598-024-57290-w

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  7. 7
    Academic Journal
    Binarized neural network of diode array with high concordance to vector–matrix multiplication

    المؤلفون: Shin, Yunwoo, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea grant funded by the Korean government, National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning

    المصدر: Scientific Reports ; volume 14, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-024-56575-4
    https://www.nature.com/articles/s41598-024-56575-4.pdf
    https://www.nature.com/articles/s41598-024-56575-4

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  8. 8
    Academic Journal
    Edge detection and graph coloring by network of oscillatory neuromorphic devices comprising silicon nanosheet-gated diodes

    المؤلفون: Shin, Yunwoo, Heo, Hyojoo, Cho, Kyoungah, Kim, Sangsig

    المصدر: Nano Research ; volume 18, issue 3, page 94907214 ; ISSN 1998-0124 1998-0000

    الاتاحة: https://doi.org/10.26599/nr.2025.94907214

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  9. 9
    Academic Journal
    Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors

    المؤلفون: Son, Jaemin, Shin, Yunwoo, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea, Samsung

    المصدر: Advanced Electronic Materials ; volume 9, issue 4 ; ISSN 2199-160X 2199-160X

    الاتاحة: http://dx.doi.org/10.1002/aelm.202201134
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202201134
    https://onlinelibrary.wiley.com/doi/full-xml/10.1002/aelm.202201134

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  10. 10
    Academic Journal
    Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors

    المؤلفون: Han, Jongseong, Son, Jaemin, Jeon, Juhee, Shin, Yunwoo, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea

    المصدر: Advanced Electronic Materials ; volume 9, issue 12 ; ISSN 2199-160X 2199-160X

    الاتاحة: http://dx.doi.org/10.1002/aelm.202300526
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202300526

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  11. 11
    Academic Journal
    Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure

    المؤلفون: Shin, Yunwoo, Son, Jaemin, Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea, Samsung

    المصدر: Advanced Electronic Materials ; volume 9, issue 8 ; ISSN 2199-160X 2199-160X

    الاتاحة: http://dx.doi.org/10.1002/aelm.202300132
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202300132

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  12. 12
    Academic Journal
    Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors

    المؤلفون: Jeon, Juhee, Woo, Sola, Cho, Kyoungah, Kim, Sangsig

    المصدر: Scientific Reports ; volume 12, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-022-16796-x
    https://www.nature.com/articles/s41598-022-16796-x.pdf
    https://www.nature.com/articles/s41598-022-16796-x

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  13. 13
    Academic Journal
    NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

    المؤلفون: Yang, Yejin, Jeon, Juhee, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

    المصدر: Scientific Reports ; volume 12, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-022-07368-0
    https://www.nature.com/articles/s41598-022-07368-0.pdf
    https://www.nature.com/articles/s41598-022-07368-0

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  14. 14
    Academic Journal
    New ternary inverter with memory function using silicon feedback field-effect transistors

    المؤلفون: Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea, Ministry of Science, ICT and Future Planning, Korea University

    المصدر: Scientific Reports ; volume 12, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-022-17035-z
    https://www.nature.com/articles/s41598-022-17035-z.pdf
    https://www.nature.com/articles/s41598-022-17035-z

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  15. 15
    Academic Journal
    Universal logic-in-memory cell enabling all basic Boolean algebra logic

    المؤلفون: Baek, Eunwoo, Cho, Kyoungah, Kim, Sangsig

    المساهمون: Ministry of Science and ICT, South Korea

    المصدر: Scientific Reports ; volume 12, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-022-24582-y
    https://www.nature.com/articles/s41598-022-24582-y.pdf
    https://www.nature.com/articles/s41598-022-24582-y

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  16. 16
    Academic Journal
    Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping

    المؤلفون: Kim, Taekham, Lim, Doohyeok, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

    المساهمون: Korea University, Ministry of Science, ICT & Future Planning, National Research Foundation of Korea

    المصدر: Nanotechnology ; volume 33, issue 41, page 415203 ; ISSN 0957-4484 1361-6528

    الاتاحة: http://dx.doi.org/10.1088/1361-6528/ac7dae
    https://iopscience.iop.org/article/10.1088/1361-6528/ac7dae
    https://iopscience.iop.org/article/10.1088/1361-6528/ac7dae/pdf

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  17. 17
    Academic Journal
    Delay characteristics of quasi-nonvolatile memory devices operating in positive feedback mechanism

    المؤلفون: Oh, Jeongyun, Jeon, Juhee, Shin, Yunwoo, Cho, Kyoungah, Kim, Sangsig

    المساهمون: Samsung, National Research Foundation of Korea, Korea University

    المصدر: Nanotechnology ; volume 35, issue 41, page 415203 ; ISSN 0957-4484 1361-6528

    الاتاحة: http://dx.doi.org/10.1088/1361-6528/ad6451
    https://iopscience.iop.org/article/10.1088/1361-6528/ad6451
    https://iopscience.iop.org/article/10.1088/1361-6528/ad6451/pdf

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  18. 18
    Academic Journal
    Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

    المؤلفون: Heo, Hyojoo, Shin, Yunwoo, Son, Jaemin, Ryu, Seungho, Cho, Kyoungah, Kim, Sangsig

    المساهمون: Samsung Electronics, Brain Korea 21 Plus Project, the National Research Foundation of Korea (NRF) grant funded by the Korean government

    المصدر: Nanotechnology ; volume 35, issue 27, page 275203 ; ISSN 0957-4484 1361-6528

    الاتاحة: http://dx.doi.org/10.1088/1361-6528/ad3b04
    https://iopscience.iop.org/article/10.1088/1361-6528/ad3b04
    https://iopscience.iop.org/article/10.1088/1361-6528/ad3b04/pdf

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  19. 19
    Academic Journal
    Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

    المؤلفون: Yang, Yejin, Park, Young-Soo, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

    المصدر: Scientific Reports ; volume 11, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-021-98182-7
    https://www.nature.com/articles/s41598-021-98182-7.pdf
    https://www.nature.com/articles/s41598-021-98182-7

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  20. 20
    Academic Journal
    One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

    المؤلفون: Choi, Sangik, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

    المساهمون: National Research Foundation of Korea, Ministry of Trade, Industry and Energy

    المصدر: Scientific Reports ; volume 11, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-021-97479-x
    https://www.nature.com/articles/s41598-021-97479-x.pdf
    https://www.nature.com/articles/s41598-021-97479-x

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