المؤلفون: Lu, Darsen D., Dunga, Mohan V., Niknejad, Ali M., Hu, Chenming, Liang, Fu-Xiang, Hung, Wei-Chen, Lee, Jia-Wei, Hsu, Chun-Hsiang, Chiang, Meng-Hsueh

مصطلحات موضوعية: Computer Science - Emerging Technologies, Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2005.02580

المؤلفون: Hus, Saban M., Ge, Ruijing, Chen, Po-An, Chiang, Meng-Hsueh, Donnelly, Gavin E., Ko, Wonhee, Huang, Fumin, Liang, Liangbo, Li, An-Ping, Akinwande, Deji

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science

URL الوصول: http://arxiv.org/abs/2002.01574

المؤلفون: Lee, Jia-Wei, Chou, Tzu-Chin, Chen, Po-An, Chiang, Meng-Hsueh

المساهمون: National Science and Technology Council, Taiwan, Higher Education Sprout Project from National Cheng Kung University, National Center for High-Performance Computing, Taiwan, Semiconductor Research Institute, NCKU QFort Center

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits ; volume 9, issue 2, page 151-158 ; ISSN 2329-9231

الاتاحة: http://dx.doi.org/10.1109/jxcdc.2023.3311899
http://xplorestaging.ieee.org/ielx7/6570653/10345396/10239165.pdf?arnumber=10239165

المؤلفون: Chen, Zih-Fei, Huang, Ya-Chi, Lai, Yu-Shen, Wu, Yi-Ting, Huang, Cheng-Ming, Chiang, Meng-Hsueh

المصدر: 2024 Device Research Conference (DRC)

الاتاحة: http://dx.doi.org/10.1109/drc61706.2024.10605303
http://xplorestaging.ieee.org/ielx8/10605129/10605242/10605303.pdf?arnumber=10605303

المؤلفون: Hus, Saban M, Ge, Ruijing, Chen, Po-An, Liang, Liangbo, Donnelly, Gavin E, Ko, Wonhee, Huang, Fumin, Chiang, Meng-Hsueh, Li, An-Ping, Akinwande, Deji

المصدر: Hus , S M , Ge , R , Chen , P-A , Liang , L , Donnelly , G E , Ko , W , Huang , F , Chiang , M-H , Li , A-P & Akinwande , D 2020 , ' Observation of single-defect memristor in an MoS2 atomic sheet ' , Nature Nanotechnology , vol. 16 , no. 2021 , pp. 58 . https://doi.org/10.1038/s41565-020-00789-w

وصف الملف: application/pdf

الاتاحة: https://pure.qub.ac.uk/en/publications/1dd31266-03d2-4ba0-b1b7-71b701f6a9d6
https://doi.org/10.1038/s41565-020-00789-w
https://pureadmin.qub.ac.uk/ws/files/221603903/Single_defect_Memristor_in_MoS2_Atomic_layer.pdf

المؤلفون: Lee, Jia-Wei, Chiang, Meng-Hsueh

المساهمون: Ministry of Science and Technology, Taiwan, National Center for High-Performance Computing and Taiwan Semiconductor Research Institute

المصدر: IEEE Journal of the Electron Devices Society ; volume 8, page 1390-1396 ; ISSN 2168-6734

الاتاحة: http://dx.doi.org/10.1109/jeds.2020.3008172
http://xplorestaging.ieee.org/ielx7/6245494/8949832/09137335.pdf?arnumber=9137335

المؤلفون: Huang, Ya-Chi, Chiang, Meng-Hsueh, Wang, Shui-Jinn, Fossum, Jerry G.

المساهمون: Ministry of Science and Technology, Taiwan, National Center for High-Performance Computing, National Nano Device Laboratories, National Chip Implementation Center

المصدر: IEEE Journal of the Electron Devices Society ; volume 5, issue 3, page 164-169 ; ISSN 2168-6734

الاتاحة: http://dx.doi.org/10.1109/jeds.2017.2689738
http://xplorestaging.ieee.org/ielx7/6245494/7909049/07890390.pdf?arnumber=7890390

المؤلفون: Chen, Po-An, Chiang, Meng-Hsueh, Hsu, Wei-Chou

المساهمون: National Chip Implementation Center, The Ministry of Science and Technology, Taiwan, The National Center for High-Performance Computing National Nano Device Laboratories

المصدر: Journal of Applied Physics ; volume 122, issue 3 ; ISSN 0021-8979 1089-7550

الاتاحة: http://dx.doi.org/10.1063/1.4994033
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4994033/15196990/034301_1_online.pdf

المؤلفون: Huang, Ya-Chi, Chiang, Meng-Hsueh, Wang, Shui-Jinn, Fossum, Jerry G.

المساهمون: Ministry of Science and Technology, Taiwan

المصدر: IEEE Transactions on Electron Devices ; volume 68, issue 12, page 6586-6591 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2021.3124472
http://xplorestaging.ieee.org/ielx7/16/9632442/09608983.pdf?arnumber=9608983

المؤلفون: Huang, Ya-Chi, Chiang, Meng-Hsueh, Wang, Shui-Jinn

المصدر: 20th International Symposium on Quality Electronic Design (ISQED)

الاتاحة: http://dx.doi.org/10.1109/isqed.2019.8697706
http://xplorestaging.ieee.org/ielx7/8682005/8697223/08697706.pdf?arnumber=8697706

المؤلفون: Wu, Yi-Ting¹ ytwu0324@gmail.com, Chiang, Meng-Hsueh¹ mhchiang@mail.ncku.edu.tw, Chen, Jone F.¹ jfchen@mail.ncku.edu.tw, Liu, Tsu-Jae King² tking@eecs.berkeley.edu

المصدر: IEEE Transactions on Electron Devices. Nov2021, Vol. 68 Issue 11, p5529-5534. 6p.

مصطلحات موضوعية: FIELD-effect transistors, ELECTRIC fields, DIELECTRICS, NANOSTRUCTURED materials, TRANSISTORS, NANOWIRES

المؤلفون: Chang, Ming-Yu, Wang, Li-Jing, Chiang, Meng-Hsueh

المصدر: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ; volume 30, page 1-2

الاتاحة: http://dx.doi.org/10.1109/s3s.2018.8640185
http://xplorestaging.ieee.org/ielx7/8636845/8640128/08640185.pdf?arnumber=8640185

المؤلفون: Chen, Jheng-Yi, Chang, Ming-Yu, Chen, Shi-Hao, Lee, Jia-Wei, Chiang, Meng-Hsueh

المصدر: 2018 19th International Symposium on Quality Electronic Design (ISQED) ; volume 30, page 151-155

الاتاحة: http://dx.doi.org/10.1109/isqed.2018.8357280
http://xplorestaging.ieee.org/ielx7/8354411/8357243/08357280.pdf?arnumber=8357280

المؤلفون: Ge, Ruijing, Wu, Xiaohan, Kim, Myungsoo, Chen, Po-An, Shi, Jianping, Choi, Junho, Li, Xiaoqin, Zhang, Yanfeng, Chiang, Meng-Hsueh, Lee, Jack C., Akinwande, Deji

المصدر: 2018 IEEE International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm.2018.8614602
http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614602.pdf?arnumber=8614602

المؤلفون: Chen, Po-An, Ge, Rui-Jing, Lee, Jia-Wei, Hsu, Chun-Hsiang, Hsu, Wei-Chou, Akinwande, Deji, Chiang, Meng-Hsueh

المصدر: 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

الاتاحة: http://dx.doi.org/10.1109/nmdc.2018.8605915
http://xplorestaging.ieee.org/ielx7/8587111/8605727/08605915.pdf?arnumber=8605915

المؤلفون: Wu, Xiaohan, Ge, Ruijing, Chen, Po‐An, Chou, Harry, Zhang, Zhepeng, Zhang, Yanfeng, Banerjee, Sanjay, Chiang, Meng‐Hsueh, Lee, Jack C., Akinwande, Deji

المساهمون: National Science Foundation, National Natural Science Foundation of China, Army Research Office

المصدر: Advanced Materials ; volume 31, issue 15 ; ISSN 0935-9648 1521-4095

الاتاحة: http://dx.doi.org/10.1002/adma.201806790
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadma.201806790
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201806790
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/adma.201806790
https://onlinelibrary.wiley.com/doi/am-pdf/10.1002/adma.201806790