المؤلفون: Chao-Chun Yen (5514134), Tsun-Min Huang (11580303), Po-Wei Chen (416504), Kai-Ping Chang (144672), Wan-Yu Wu (4382233), Dong-Sing Wuu (11580306)

مصطلحات موضوعية: Medicine, Biotechnology, Ecology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, transmission electron microscopy, deep ultraviolet photodetectors, 91 × 10, 800 ° c, 600 ° c, 5 v bias, 1000 ° c, slight random orientation, native amorphous nano, type silicon (<, preferred orientation prepared, peak , oxide film formed, dark , ), 2 , 2 , amorphous silicon oxide, 3 , 100 )/ sio, preferred orientation, , interfacial oxide

Relation: https://figshare.com/articles/journal_contribution/Role_of_Interfacial_Oxide_in_the_Preferred_Orientation_of_Ga_sub_2_sub_O_sub_3_sub_on_Si_for_Deep_Ultraviolet_Photodetectors/16832130

الاتاحة: https://doi.org/10.1021/acsomega.1c04380.s001