المؤلفون: Arsen Ahmed Mohammed, Ahmed Burhan Mohammed, Zaidoon Khalaf Mahmood

المصدر: Results in Engineering, Vol 24, Iss , Pp 103467- (2024)

مصطلحات موضوعية: Universal bi-quad filter, Carbon nanotube field effect transistor (CNFET), Floating current source (IFCS), Quadrature oscillator (QO), Cadence virtuoso tools, Technology

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590123024017195; https://doaj.org/toc/2590-1230

URL الوصول: https://doaj.org/article/e81ea6c332fd44759c30d95899a3f26b

المؤلفون: Kavitha Manickam, P.K. Janani, S. Karthick, S. Arulsivam, C. Vikram, G. Hariharan, R. Kavinkumar, P. Ganesh

المصدر: Iranian Journal of Electrical and Electronic Engineering, Vol 20, Iss 2, Pp 112-124 (2024)

مصطلحات موضوعية: carbon nanotube (cnt), cnfet, sram, low power, vlsi, 5g networks., Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://ijeee.iust.ac.ir/article-1-3243-en.pdf; https://doaj.org/toc/1735-2827; https://doaj.org/toc/2383-3890

URL الوصول: https://doaj.org/article/d1af370ca789497aacf2125a0c76f245

المؤلفون: Chenlin Shi, Shinobu Miwa, Tongxin Yang, Ryota Shioya, Hayato Yamaki, Hiroki Honda

المصدر: IEEE Access, Vol 12, Pp 165335-165347 (2024)

مصطلحات موضوعية: CNFET, cell library, logic synthesis, place and route, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10746448/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/5751e72816fb491db9be7d0315133e75

المؤلفون: Safaei Mehrabani, Yavar, Maleknejad, Mojtaba, Rostami, Danial, Uoosefian, HamidReza

المصدر: Circuit World, 2022, Vol. 49, Issue 4, pp. 397-412.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/CW-05-2021-0128

المؤلفون: An Qi Zhang, Amr M. S. Tosson, Dylan Ma, Ryan Fang, Lan Wei

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 168-175 (2023)

مصطلحات موضوعية: Carbon nanotube field-effect transistor (CNFET), image processing, multilayer perceptron (MLP), neural network, NeuroSim, static random access memory (SRAM), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10246789/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/b68f605d55874eb39931d4d0d6ed71e9

المؤلفون: Mehdi Takbiri, Keivan Navi, Reza Faghih Mirzaee

المصدر: IEEE Access, Vol 10, Pp 10553-10565 (2022)

مصطلحات موضوعية: CNFET, inverter, noise margin, reliability, static noise margin, ternary logic, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9687537/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/618361df009f44d0a887b1f3b59d0035

المؤلفون: Ramsha Suhail, Pragya Srivastava, Richa Yadav, Richa Srivastava

المصدر: Advances in Electrical and Electronic Engineering, Vol 20, Iss 3, Pp 272-284 (2022)

مصطلحات موضوعية: cmos, cnfet, edp, low power, mcml, pdp, propagation delay., Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://advances.utc.sk/index.php/AEEE/article/view/4279; https://doaj.org/toc/1336-1376; https://doaj.org/toc/1804-3119

URL الوصول: https://doaj.org/article/ab2b4013ecdb45368169b014bbf855d9

المؤلفون: Minghui Yin, Weihua Zhang, Xin Liu, Yunxia You, Zhiqiang Li, Zihao Yang

المصدر: IEICE Electronics Express. 2023, 20(12):20230171

المؤلفون: Seyed Hossein Shahrokhi, Mehdi Hosseinzadeh, Midia Reshadi, Saeid Gorgin

المصدر: Mathematics; Volume 11; Issue 12; Pages: 2649

مصطلحات موضوعية: approximate, full adder, CNFET, alpha blending, high speed

وصف الملف: application/pdf

Relation: Mathematics and Computer Science; https://dx.doi.org/10.3390/math11122649

الاتاحة: https://doi.org/10.3390/math11122649

المؤلفون: Ramzi A. Jaber, Ali M. Haidar, Abdallah Kassem, Furqan Zahoor

المصدر: Micromachines; Volume 14; Issue 5; Pages: 1064

مصطلحات موضوعية: CNFET, logic design, MVL, nanoscale devices, ternary full adder (TFA), ternary multiplexer (TMUX), unary operators

وصف الملف: application/pdf

Relation: E：Engineering and Technology; https://dx.doi.org/10.3390/mi14051064

الاتاحة: https://doi.org/10.3390/mi14051064

المؤلفون: Shanmugam Kavitha, Chandrasekaran Kumar, Hady H. Fayek, Eugen Rusu

المصدر: Electronics, Vol 12, Iss 7, p 1611 (2023)

مصطلحات موضوعية: SRAM, multi-threshold, CNFET, pre-charging, low-power, delay, Electronics, TK7800-8360

Relation: https://www.mdpi.com/2079-9292/12/7/1611; https://doaj.org/toc/2079-9292; https://doaj.org/article/3b85647858534154a009be88cca0c440

الاتاحة: https://doi.org/10.3390/electronics12071611
https://doaj.org/article/3b85647858534154a009be88cca0c440

المؤلفون: Masoud Mahjoubi, Morteza Dadashi, Kooroush Manochehri, Saadat Pourmozafari

المصدر: Computer and Knowledge Engineering, Vol 4, Iss 1, Pp 25-34 (2021)

مصطلحات موضوعية: cnfet, ternary adder, multi-value logic, ternary logic, nanotechnology, Computer software, QA76.75-76.765

وصف الملف: electronic resource

Relation: https://cke.um.ac.ir/article_40731_91f55feb1e52a553b97009116a6af2f9.pdf; https://doaj.org/toc/2538-5453; https://doaj.org/toc/2717-4123

URL الوصول: https://doaj.org/article/8476f9713f6f4348b635351f506fbad4

المؤلفون: Uoosefian, Hamidreza, Navi, Keivan, Faghih Mirzaee, Reza, Hosseinzadeh, Mahdi

المصدر: Circuit World, 2020, Vol. 46, Issue 4, pp. 285-299.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/CW-12-2018-0106

المؤلفون: Daehyun Kim, Edward Lee, Jamin Seo, Jinwoo Kim, Sung Kyu Lim, Saibal Mukhopadhyay

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 106-114 (2021)

مصطلحات موضوعية: CNFET, memory compiler, monolithic-3-D (M3D), electronic design automation (EDA), SRAM, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9576728/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/df1b2c62224146cda435cc567414f305

المؤلفون: Chen, Rongmei, Chen, Lin, Liang, Jie, Cheng, Yuanqing, Elloumi, Souhir, Lee, Jaehyun, Xu, Kangwei, Georgiev, Vihar, Ni, Kai, Debacker, Peter, Asenov, Asen, Todri-Sanial, Aida

المساهمون: IMEC (IMEC), Catholic University of Leuven = Katholieke Universiteit Leuven (KU Leuven), Beihang University (BUAA), ShanghaiTech University Shanghai, Smart Integrated Electronic Systems (LIRMM, Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), University of Glasgow, Rochester Institute of Technology (RIT)

المصدر: ISSN: 1063-8210 ; IEEE Transactions on Very Large Scale Integration (VLSI) Systems ; https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593103 ; IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2022, 30 (4), pp.440-448. ⟨10.1109/TVLSI.2022.3146064⟩.

مصطلحات موضوعية: Area, carbon nanotube (CNT) interconnect, carbon nanotube field effect transistor (CNFET) static random access memory (SRAM) array, energy-delay-product (EDP), FinFET SRAM array, layout, read latency, static noise margin, write latency, [SPI]Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593103
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593103v1/document
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593103v1/file/265748.pdf
https://doi.org/10.1109/TVLSI.2022.3146064

المؤلفون: Chen, Rongmei, Chen, Lin, Liang, Jie, Cheng, Yuanqing, Elloumi, Souhir, Lee, Jaehyun, Xu, Kangwei, Georgiev, Vihar, Ni, Kai, Debacker, Peter, Asenov, Asen, Todri-Sanial, Aida

المساهمون: IMEC (IMEC), Catholic University of Leuven = Katholieke Universiteit Leuven (KU Leuven), Beihang University (BUAA), Shanghai University, Smart Integrated Electronic Systems (LIRMM, Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Synopsys Inc., University of Glasgow, Rochester Institute of Technology (RIT)

المصدر: ISSN: 1063-8210 ; IEEE Transactions on Very Large Scale Integration (VLSI) Systems ; https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593054 ; IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2022, 30 (4), pp.432-439. ⟨10.1109/TVLSI.2022.3146125⟩.

مصطلحات موضوعية: Carbon nanotube field-effect transistor (CNFET) static random access memory (SRAM) cell, energy-delay-product (EDP), FinFET SRAM cell, read delay, static noise margin (SNM), static power, write delay, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593054
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593054v1/document
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03593054v1/file/265747.pdf
https://doi.org/10.1109/TVLSI.2022.3146125

المؤلفون: Gopinath, Anoop, Cochran, Zachary, Ytterdal, Trond, Rizkalla, Maher

المساهمون: Electrical and Computer Engineering, Purdue School of Engineering and Technology

المصدر: Publisher

مصطلحات موضوعية: Carbon Nanotube Field Effects Transistors (CNFET), Graphene Nanoribbon Field Effect Transistors (GNRFET), Tunnel Field Effect Transistor (TFET), Static noise margins (SNM), Exploratory devices, Characterization

وصف الملف: application/pdf

Relation: Materials Today: Proceedings; https://hdl.handle.net/1805/40515

الاتاحة: https://hdl.handle.net/1805/40515

المؤلفون: Pritpal S. Kanhaiya (11612858), Andrew Yu (11612861), Richard Netzer (11612864), William Kemp (9335010), Derek Doyle (11612867), Max M. Shulaker (2201530)

مصطلحات موضوعية: Biophysics, Biotechnology, Ecology, Immunology, Space Science, Environmental Sciences not elsewhere classified, Astronomical and Space Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, threshold dose rate, 3 × 10, eventually destroys electronics, cnfet device geometries, cnfet benefits owing, cosmic radiation damages, generation space applications, 10 , tolerant electronics electronics, electronics driving, efficient electronics, space applications, via <, intrinsic <, extrinsic <, tolerant cnfets, therefore time, temperature fabrication, taken together, stringent requirements

Relation: https://figshare.com/articles/journal_contribution/Carbon_Nanotubes_for_Radiation-Tolerant_Electronics/16885049

الاتاحة: https://doi.org/10.1021/acsnano.1c04194.s001

المؤلفون: Youngbae Kim, Shreyash Patel, Heekyung Kim, Nandakishor Yadav, Kyuwon Ken Choi

المصدر: Electronics; Volume 10; Issue 3; Pages: 256

مصطلحات موضوعية: CNFET (Carbon Nanotube Filed Effect Transistor), FinFET (Fin Field Effect Transistor), read SNM free, low power SRAM, 8-T SRAM, CNFET SRAM, FinFET SRAM

وصف الملف: application/pdf

Relation: Electrical and Autonomous Vehicles; https://dx.doi.org/10.3390/electronics10030256

الاتاحة: https://doi.org/10.3390/electronics10030256

المؤلفون: Safaei Mehrabani, Yavar, Bagherizadeh, Mehdi, Shafiabadi, Mohammad Hossein, Ghasempour, Abolghasem

المصدر: Circuit World, 2019, Vol. 45, Issue 3, pp. 156-168.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/CW-01-2019-0009