المؤلفون: Matthew Chen, Charana Sonnadara, Sahil Shah

المصدر: Electronics Letters, Vol 60, Iss 17, Pp n/a-n/a (2024)

مصطلحات موضوعية: analogue integrated circuits, CMOS memory circuits, neural net architecture, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://doaj.org/toc/0013-5194; https://doaj.org/toc/1350-911X

URL الوصول: https://doaj.org/article/00b5673948344a9ca17d99781e5fbf86

المؤلفون: Chenjie Jiang, Junqi Wen, Siyu Meng, Kepu Fu, Changquan Xia, Haitao Chen, Qinyu Qian, Liwen Cheng

المصدر: Electronics Letters, Vol 60, Iss 17, Pp n/a-n/a (2024)

مصطلحات موضوعية: circuit simulation, CMOS memory circuits, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://doaj.org/toc/0013-5194; https://doaj.org/toc/1350-911X

URL الوصول: https://doaj.org/article/1cf1f81d74ea4438acb790b7157a5af1

المؤلفون: Tanaka, Masamitsu¹, Suzuki, Masato¹, Konno, Gen², Ito, Yuki¹, Fujimaki, Akira¹, Yoshikawa, Nobuyuki²

المصدر: IEEE Transactions on Applied Superconductivity. Jun2017 Part 1, Vol. 27 Issue 4, Part 1, p1-4. 4p.

مصطلحات موضوعية: CMOS memory circuits, CRYOTRONS, DYNAMIC random access memory, QUANTUM logic

المؤلفون: Agrawal, Amogh, Jaiswal, Akhilesh, Lee, Chankyu, Roy, Kaushik

المصدر: IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Dec2018, Vol. 65 Issue 12, p4219-4232. 14p.

مصطلحات موضوعية: *RANDOM access memory, *ARTIFICIAL intelligence, BOOLEAN algebra, CMOS memory circuits, METAL oxide semiconductor field-effect transistor testing

المؤلفون: Huang, Peng¹, Chen, Sijie¹, Zhao, Yudi¹, Chen, Bing², Gao, Bin³, Liu, Lifeng¹, Chen, Yong⁴, Zhang, Ziying⁴, Bu, Weihai⁴, Wu, Hanming⁴, Liu, Xiaoyan¹, Kang, Jinfeng¹

المصدر: IEEE Transactions on Electron Devices. Nov2016, Vol. 63 Issue 11, p4295-4301. 7p.

مصطلحات موضوعية: *RELIABILITY in engineering, *RANDOM access memory, CMOS memory circuits, SWITCHING circuits, INTERFACES (Physical sciences)

المؤلفون: Samba Raju Chiluveru, Manoj Tripathy, Bibhudutta

المصدر: IET Circuits, Devices and Systems, Vol 15, Iss 7, Pp 630-640 (2021)

مصطلحات موضوعية: CMOS memory circuits, content‐addressable storage, integrated circuit design, Monte Carlo methods, memristor circuits, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1751-858X; https://doaj.org/toc/1751-8598

URL الوصول: https://doaj.org/article/e30442dc1a2e45d18b6010e06932d4c3

المؤلفون: Masoodur Rahman Khan, ABM Harun‐ur Rashid

المصدر: IET Circuits, Devices and Systems, Vol 15, Iss 7, Pp 619-629 (2021)

مصطلحات موضوعية: CMOS memory circuits, content‐addressable storage, integrated circuit design, Monte Carlo methods, memristor circuits, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1751-858X; https://doaj.org/toc/1751-8598

URL الوصول: https://doaj.org/article/04ddb38e0f774a49a1eb4968200a4ab4

المؤلفون: Liu, Lianxi¹, Mu, Junchao², Zhu, Zhangming¹

المصدر: IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Jan2018, Vol. 65 Issue 1, p95-106. 12p.

مصطلحات موضوعية: CMOS memory circuits, THRESHOLD voltage, CAPACITORS

المؤلفون: Jianjun, Chen¹, Shuming, Chen¹, Yaqing, Chi¹, Bin, Liang¹

المصدر: IEEE Transactions on Nuclear Science. Oct2015 Part 2, Vol. 62 Issue 5b, p2302-2309. 8p.

مصطلحات موضوعية: LOGIC circuits, CMOS memory circuits, PULSE modulation, CHARGE sharing (Digital electronics), TRANSIENT analysis

المؤلفون: Ashish Sachdeva, V. K. Tomar

المصدر: IET Circuits, Devices and Systems, Vol 15, Iss 1, Pp 42-64 (2021)

مصطلحات موضوعية: CMOS memory circuits, electronic engineering computing, integrated circuit design, low‐power electronics, network topology, SRAM chips, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1751-858X; https://doaj.org/toc/1751-8598

URL الوصول: https://doaj.org/article/89c3b594cf4c469d96fc8de6a893508d

المؤلفون: Wang, Ran¹, Zhang, Zhaobo², Kavousianos, Xrysovalantis³, Tsiatouhas, Yiorgos³, Chakrabarty, Krishnendu¹

المصدر: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems. Aug2014, Vol. 33 Issue 8, p1231-1244. 14p.

مصطلحات موضوعية: COMPLEMENTARY metal oxide semiconductors, CMOS memory circuits, METAL oxide semiconductors, ENERGY consumption research, ELECTRIC potential

المؤلفون: Alsuraisry, Hamed¹, Cheng, Jen‐Hao², Li, Wei‐Tsung², Tsai, Jeng‐Han³ jhtsai@ntnu.edu.tw, Huang, Tian‐Wei²

المصدر: Microwave & Optical Technology Letters. Jun2017, Vol. 59 Issue 6, p1306-1309. 5p.

مصطلحات موضوعية: *VOLTAGE-controlled oscillators, *CMOS memory circuits, *COMPLEMENTARY metal oxide semiconductors, *FREQUENCY dividers, *BANDWIDTHS

المؤلفون: Wang, Sen¹, Lin, Wen-Jie¹

المصدر: IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Oct2014, Vol. 61 Issue 10, p2999-3006. 8p.

مصطلحات موضوعية: *INTEGRATED circuits, CMOS memory circuits, MONOPULSE radar, LINE receivers (Integrated circuits), BROADBAND amplifiers

المؤلفون: Mikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S.

مصطلحات موضوعية: CMOS-Speicherschaltungen, ferroelektrische Materialien, ferroelektrische Speicherung, Hafnium-Verbindungen, Bleiverbindungen, resistiver RAM, CMOS memory circuits, ferroelectric materials, ferroelectric storage, hafnium compounds, lead compounds, resistive RAM, info:eu-repo/classification/ddc/621.3, ddc:621.3

الاتاحة: https://tud.qucosa.de/id/qucosa%3A77577
https://tud.qucosa.de/api/qucosa%3A77577/attachment/ATT-0/

المؤلفون: Sánchez, Daniel¹ dsanchez@ditec.um.es, Cebrián, Juan¹ jcebrian@ditec.um.es, García, José¹ jmgarcia@ditec.um.es, Aragón, Juan¹ jlaragon@ditec.um.es

المصدر: Distributed Computing. Apr2015, Vol. 28 Issue 2, p75-90. 16p.

مصطلحات موضوعية: *CMOS memory circuits, *FAULT-tolerant computing, *SOFT errors, *CACHE memory, *COMPUTER simulation

المؤلفون: Shou, X Q, Kalantari, N, Green, Michael M

المصدر: IEEE Transactions on Circuits and Systems I-Regular Papers. 53(12)

مصطلحات موضوعية: CMOS digital integrated circuits, CMOS memory circuits, digital integrated circuits, integrated logic circuits, multi-valued logic circuits

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/61f754rc

المؤلفون: Noda, Toshihiko¹ t-noda@ms.naist.jp, Sasagawa, Kiyotaka¹, Tokuda, Takashi¹, Terasawa, Yasuo², Tashiro, Hiroyuki³, Kanda, Hiroyuki⁴, Fujikado, Takashi⁴, Ohta, Jun¹

المصدر: Sensors & Actuators A: Physical. May2014, Vol. 211, p27-37. 11p.

مصطلحات موضوعية: *PERFORMANCE evaluation, *CMOS memory circuits, *INTEGRATED circuits, *IRIDIUM oxide films, *MINIATURE electronic equipment, *ELECTRIC wiring

المؤلفون: Valentian, A., Rummens, F., Vianello, E., Mesquida, T., de Boissac, C. Lecat-Mathieu, Bichler, O., Reita, C.

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), ANR-19-P3IA-0003,MIAI,MIAI @ Grenoble Alpes(2019), European Project: 687299,H2020,H2020-ICT-2015,NeuRAM3(2016)

المصدر: 2019 IEEE International Electron Devices Meeting (IEDM)
https://hal.univ-grenoble-alpes.fr/hal-03356354
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.14.3.1-14.3.4, ⟨10.1109/IEDM19573.2019.8993431⟩

مصطلحات موضوعية: CMOS memory circuits, inference mechanisms, integrated circuit testing, learning (artificial intelligence), neural chips, perceptrons, resistive RAM, [INFO.INFO-AI]Computer Science [cs]/Artificial Intelligence [cs.AI]

جغرافية الموضوع: San Francisco, United States

Relation: info:eu-repo/grantAgreement//687299/EU/NEUral computing aRchitectures in Advanced Monolithic 3D-VLSI nano-technologies/NeuRAM3; hal-03356354; https://hal.univ-grenoble-alpes.fr/hal-03356354

الاتاحة: https://hal.univ-grenoble-alpes.fr/hal-03356354
https://doi.org/10.1109/IEDM19573.2019.8993431

المؤلفون: Tajima, Masato

المصدر: IEEE Transactions on Information Theory; May2019, Vol. 65 Issue 5, p2704-2722, 19p

مصطلحات موضوعية: VITERBI decoding, DECODING algorithms, CMOS memory circuits, MAXIMUM likelihood decoding, MAXIMUM likelihood statistics

المؤلفون: Wang, Lin, Liao, Wugang, Xu, Shengqiang, Gong, Xiao, Zhu, Chunxiang, Ang, Kah-Wee

المصدر: IEEE Electron Device Letters; Mar2019, Vol. 40 Issue 3, p471-474, 4p

مصطلحات موضوعية: PHOSPHORUS, ELECTRIC conductivity, MAGNESIUM oxide, FIELD-effect transistors, ATOMIC layer deposition, ELECTRON transport, ELECTRON mobility, CMOS memory circuits