المؤلفون: E. Gomiero, G. Samanni, J. Jasse, C. Jahan, O. Weber, R. Berthelon, R. Ranica, L. Favennec, V. Caubet, D. Ristoiu, J. P. Reynard, L. Clement, P. Zuliani, R. Annunziata, F. Arnaud

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 517-521 (2019)

مصطلحات موضوعية: Amorphous, chalcogenide, phase change memory (PCM), Ge-Sb-Te (GST) compounds, quenching time, resistance, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8704299/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/d32a756f1cf8471fafe70bc493d62c3c

المؤلفون: L. Grenouillet, J. Barbot, J. Laguerre, S. Martin, C. Carabasse, M. Louro, M. Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, T. Magis, C. Jahan, F. Andrieu, J. Coignus

المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9e8e0a386fa50f81c95c4bc7797351fd
https://doi.org/10.1109/irps48203.2023.10118099

المؤلفون: F. Mazen, C. Pellissier, C. Jahan, A. Roman, Laurent Grenouillet, N.-P. Tran, M. Bedjaoui, A. Seignard, S. Ricavy, Elisa Vianello, P. Besombes, V. Meli, O. Billoint, Christelle Boixaderas, M. Tessaire, S. Landis, Gabriel Molas, A. Persico, A. Magalhaes-Lucas, P. Dezest, Christelle Charpin-Nicolle, F. Gaillard, S. Bernasconi, R. Segaud, J. Arcamone, Steve W. Martin, C. Carabasse, T. Magis, N. Castellani, Etienne Nowak

المصدر: IEEE International Memory Workshop (IMW)
2021 IEEE International Memory Workshop (IMW)

مصطلحات موضوعية: Materials science, business.industry, Transistor, Spice, Monte Carlo method, Silicon on insulator, law.invention, Power (physics), Non-volatile memory, CMOS, law, Logic gate, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::738ac7f810ad2bba6fdea6405930ae0c

المؤلفون: Roberto Annunziata, L. Favennec, F. Disegni, D. Turgis, Jean-Luc Ogier, Remi Beneyton, Xavier Federspiel, N. Cherault, Fausto Piazza, A. Gandolfo, M. Molgg, E. Ciantar, Enrico Gomiero, P.O. Sassoulas, J. P. Reynard, B. Dumont, S. Delmedico, Alexandre Villaret, Olivier Weber, A. Viscuso, Franck Arnaud, L. Clement, L. Desvoivres, Paulo Ferreira, Paolo Mattavelli, C. Gallon, R. Ranica, O. Kermarrec, J. Jasse, S. Chouteau, C. Jahan, C. Boccaccio, Paolo Cappelletti, A. Souhaite, G. Samanni, Paola Zuliani, R. Berthelon, V. Caubet, Philippe Boivin, D. Ristoiu, Alfonso Maurelli, J. C. Grenier

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: Computer science, business.industry, Reading (computer), Transistor, Bipolar junction transistor, Automotive industry, High density, law.invention, Microcontroller, Reliability (semiconductor), law, Soldering, Electronic engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cb9d7d45a06fe3730a77e9eea337f87a
https://doi.org/10.1109/iedm13553.2020.9371934

المؤلفون: Roberto Annunziata, O. Weber, J. Jasse, Paola Zuliani, V. Caubet, Franck Arnaud, G. Samanni, Enrico Gomiero, L. Favennec, R. Berthelon, D. Ristoiu, C. Jahan, L. Clement, J. P. Reynard, R. Ranica

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 517-521 (2019)

مصطلحات موضوعية: Materials science, Chalcogenide, Measure (mathematics), law.invention, resistance, chalcogenide, chemistry.chemical_compound, law, Electrical and Electronic Engineering, Crystallization, business.industry, Process (computing), quenching time, Function (mathematics), Ge-Sb-Te (GST) compounds, Electronic, Optical and Magnetic Materials, Amorphous solid, chemistry, phase change memory (PCM), Amorphous, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, State (computer science), business, lcsh:TK1-9971, Reset (computing), Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::930b1b015adb15c3586cc459f3581efb
https://doi.org/10.1109/jeds.2019.2913467

المؤلفون: L. Perniola, J. Razafi Ndramora, P. Scheiblin, C. Jahan, B. De Salvo, G. Reimbold, F. Boulanger, G. Ghibaudo

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2007/feb/feb2007.pdf.

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.638.1058; http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2007/feb/feb2007.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.638.1058
http://www.silvaco.com/tech_lib_TCAD/simulationstandard/2007/feb/feb2007.pdf

المؤلفون: B.-N. Bozon, J.-Ph. Reynard, Y. Le Friec, Sylvie Favier, Yann Mazel, K. Dabertrand, Patrice Gergaud, R. Famulok, Ph. Rodriguez, Fabrice Nemouchi, C. Jahan, Bernard Previtali, F. Boyer

المساهمون: Département Intégration Hétérogène sur Silicium (DIHS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics, Applied Materials France, ANR-11-EQPX-0010,CRGF,Lignes synchrotron françaises à l'ESRF(2011), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010), ANR: ANR-10-AIRT-05,Programme Investissements d’Avenir

المصدر: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 2017, 71, pp.433-440. ⟨10.1016/j.mssp.2017.08.033⟩
Materials Science in Semiconductor Processing, Elsevier, 2017, 71, pp.433-440. ⟨10.1016/j.mssp.2017.08.033⟩

مصطلحات موضوعية: Materials science, Interconnects, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Tungsten, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Atomic layer deposition, Plasma-enhanced chemical vapor deposition, Low resistance, Contact, 0103 physical sciences, General Materials Science, Thin film, Composite material, 010302 applied physics, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, X-ray reflectivity, Tungsten film, chemistry, Mechanics of Materials, PCRAM, Liner, 0210 nano-technology, Layer (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92b6f3a32feea7f719e44744e05d4fc6
https://doi.org/10.1016/j.mssp.2017.08.033

المؤلفون: Charles M. Rice, Xianfang Wu, Stephan Urban, William M. Schneider, Y. Ni, Yingpu Yu, Eleftherios Michailidis, Ashley Acevedo, Chenhui Zou, Y.P. de Jong, C. Jahan, Pradeep M. Ambrose, Corrine Quirk, Mohanmmad Kabbani, Amir Shlomai

مصطلحات موضوعية: Hepatitis B virus, 0303 health sciences, medicine.drug_class, RNA, Drug resistance, Biology, medicine.disease, medicine.disease_cause, Virology, Virus, digestive system diseases, 3. Good health, 03 medical and health sciences, Chronic infection, 0302 clinical medicine, Viral evolution, Hepatocellular carcinoma, medicine, 030211 gastroenterology & hepatology, Antiviral drug, 030304 developmental biology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61de0737a4cbc48a334802f65eea8603

المؤلفون: V. Loup, G. Audoit, S. Reboh, R. Coquand, M. Vinet, M. Barlas, N. Rambal, S Barraud, A. Toffoli, E. Vianello, C. Jahan, V. Beugin, Vincent Delaye, O. Pollet, L. Brevard, C. Vizioz, O. Faynot, T. Dewolf, Nicolas Posseme, S. Chevalliez, N. Allouti, L. Perniola, Sébastien Barnola, B. Bouix, S. Bernasconi, C. Comboroure, Philippe Rodriguez, Yves Morand, C. Tallaron, L. Grenouillet

المصدر: Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.

مصطلحات موضوعية: Materials science, law, Process (engineering), Transistor, Engineering physics, law.invention

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::40e32b0961ff0b1c447494a433e2c935
https://doi.org/10.7567/ssdm.2017.d-1-04

المؤلفون: Adam Dobri, Alain Toffoli, Luca Perniola, F. Balestra, Fausto Piazza, S. Jeannot, Dann Morillon, C. Jahan

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: 2017 EUROSOI-ULIS Proceedings
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.117-119, ⟨10.1109/ULIS.2017.7962616⟩

مصطلحات موضوعية: Materials science, nonvolatile memory, ONO, Gate dielectric, chemistry.chemical_element, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Stack (abstract data type), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, embedded flash, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Metal gate, High-κ dielectric, Leakage (electronics), 010302 applied physics, business.industry, Electrical engineering, 021001 nanoscience & nanotechnology, chemistry, Logic gate, high-k metal gate, Optoelectronics, 0210 nano-technology, business, Tin, Gate equivalent, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a43c0a93a1cbfb2a6566ce3dda23ad8c
https://hal.archives-ouvertes.fr/hal-02014190

المؤلفون: Alain Toffoli, Loic Welter, J. P. Reynard, C. Jahan, Franck Julien, E. Richard, Dann Morillon, Pascal Masson, Jean Coignus

المصدر: 2017 International Conference of Microelectronic Test Structures (ICMTS).

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Gate dielectric, Electrical engineering, Time-dependent gate oxide breakdown, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, CMOS, Hardware_GENERAL, Gate oxide, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, 0210 nano-technology, business, Metal gate, Gate equivalent, Hardware_LOGICDESIGN, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1e1467f72c9b9b61750449a2f6180b0b
https://doi.org/10.1109/icmts.2017.7954274

المؤلفون: L. Perniola, P. Noé, Q. Hubert, S. Souiki, G. Ghezzi, G. Navarro, A. Persico, V. Delaye, D. Blachier, J. P. Barnes, E. Henaff, M. Tessaire, E. Souchier, A. Roule, F. Fillot, J. Ferrand, A. Fargeix, F. Hippert, J. Y. Raty, C. Jahan, V. Sousa, S. Maitrejean, B. De Salvo, G. Reimbold, CABRINI, ALESSANDRO, TORELLI, GUIDO

المساهمون: L., Perniola, P., Noé, Q., Hubert, S., Souiki, G., Ghezzi, G., Navarro, Cabrini, Alessandro, A., Persico, V., Delaye, D., Blachier, J. P., Barne, E., Henaff, M., Tessaire, E., Souchier, A., Roule, F., Fillot, J., Ferrand, A., Fargeix, F., Hippert, J. Y., Raty, C., Jahan, V., Sousa, Torelli, Guido, S., Maitrejean, B., De Salvo, G., Reimbold

مصطلحات موضوعية: PHASE CHANGE MEMORIES, PHASE CHANGE MATERIALS, CHALCOGENIDE ALLOYS, C-DOPED CHALCOGENIDE

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-4673-4871-3; info:eu-repo/semantics/altIdentifier/wos/WOS:000320615600112; ispartofbook:2012 International Electron Devices Meeting Technical Digest; 2012 International Electron Devices Meeting (IEDM); firstpage:443; lastpage:446; numberofpages:4; serie:TECHNICAL DIGEST-INTERNATIONAL ELECTRON DEVICES MEETING; http://hdl.handle.net/11571/634818; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84876160178

الاتاحة: http://hdl.handle.net/11571/634818
https://doi.org/10.1109/IEDM.2012.6479069

المؤلفون: A. Fantini, V. Sousa, L. Perniola, E. Gourvest, J. C. Bastien, S. Maitrejean, N. Pashkov, A. Bastard, B. Hyot, A. Roule, A. Persico, H. Feldis, C. Jahan, J. F. Nodin, D. Blachier, A. Toffoli, G. Reimbold, F. Fillot, F. Pierre, R. Annunziata, D. Benshael, P. Mazoyer, C. Vallée, T. Billon, J. Hazart, B. De Salvo, F. Boulanger, BRAGA, STEFANIA

المساهمون: A., Fantini, V., Sousa, L., Perniola, E., Gourvest, J. C., Bastien, S., Maitrejean, Braga, Stefania, N., Pashkov, A., Bastard, B., Hyot, A., Roule, A., Persico, H., Feldi, C., Jahan, J. F., Nodin, D., Blachier, A., Toffoli, G., Reimbold, F., Fillot, F., Pierre, R., Annunziata, D., Benshael, P., Mazoyer, C., Vallée, T., Billon, J., Hazart, B., De Salvo, F., Boulanger

مصطلحات موضوعية: PHASE CHANGE MEMORIES, MULTILEVEL STORAGE, PHASE CHANGE MATERIALS, SELF-HEATING, CHALCOGENIDE ALLOYS

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781442474185; info:eu-repo/semantics/altIdentifier/wos/WOS:000287997300165; ispartofbook:IEEE International Electron Devices Meeting Technical Digest; International Electron Devices Meeting (IEDM ’10); firstpage:29.1.1; lastpage:29.1.4; http://hdl.handle.net/11571/225563; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-79951843154

الاتاحة: http://hdl.handle.net/11571/225563
https://doi.org/10.1109/IEDM.2010.5703441

المؤلفون: G. Betti Beneventi, E. Gourvestzk, A. Fantini, L. Perniola, V. Sousa, S. Maitrejean, J. C. Bastien, A. Bastard, A. Fargeix, B. Hyot, C. Jahan, J. F. Nodin, A. Persico, D. Blachier, A. Toffoli, S. Loubriat, A. Roule, S. Lhostis, H. Feldis, G. Reimbold, T. Billon, B. De Salvo, D. Bensahel, P. Mazoyer, R. Annunziata, F. Boulanger, LARCHER, Luca, PAVAN, Paolo

المساهمون: G., Betti Beneventi, E., Gourvestzk, A., Fantini, L., Perniola, V., Sousa, S., Maitrejean, J. C., Bastien, A., Bastard, A., Fargeix, B., Hyot, C., Jahan, J. F., Nodin, A., Persico, D., Blachier, A., Toffoli, S., Loubriat, A., Roule, S., Lhosti, H., Feldi, G., Reimbold, T., Billon, B., De Salvo, Larcher, Luca, Pavan, Paolo, D., Bensahel, P., Mazoyer, R., Annunziata, F., Boulanger

مصطلحات موضوعية: Phase change memory, device reliability

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781424467198; ispartofbook:Proc. of Intenrational Memory Workshop; Intenrational Memory Workshop; firstpage:1; lastpage:4; http://hdl.handle.net/11380/643087; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-77957902355

الاتاحة: http://hdl.handle.net/11380/643087
https://doi.org/10.1109/IMW.2010.5488328

المؤلفون: G. Betti Beneventi, L. Perniola, A. Fantini, D. Blachier, A. Toffoli, E. Gourvest, S. Maitrejean, V. Sousa, C. Jahan, J. F. Nodin, A. Persico, S. Loubriat, A. Roule, S. Lhostis, H. Feldis, G. Reimbold, T. Billon, B. De Salvo, D. Bensahel, P. Mazoyer, R. Annunziata, F. Boulanger, LARCHER, Luca, PAVAN, Paolo

المساهمون: G., Betti Beneventi, L., Perniola, A., Fantini, D., Blachier, A., Toffoli, E., Gourvest, S., Maitrejean, V., Sousa, C., Jahan, J. F., Nodin, A., Persico, S., Loubriat, A., Roule, S., Lhosti, H., Feldi, G., Reimbold, T., Billon, B., De Salvo, Larcher, Luca, Pavan, Paolo, D., Bensahel, P., Mazoyer, R., Annunziata, F., Boulanger

مصطلحات موضوعية: Phase Change Memorie, modeling an characterization, device reliability

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781424466580; ispartofbook:ESSDERC, Tech. Proc. of; ESSDERC; firstpage:313; lastpage:316; http://hdl.handle.net/11380/646631; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-78649955503

الاتاحة: http://hdl.handle.net/11380/646631
https://doi.org/10.1109/ESSDERC.2010.5618230

المؤلفون: Q. Hubert, H. Grampeix, Vincent Delaye, B. De Salvo, D. Lafond, A. Toffoli, C. Jahan

المصدر: IEEE Transactions on Electron Devices. 60:2268-2275

مصطلحات موضوعية: 010302 applied physics, Materials science, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Tungsten, 021001 nanoscience & nanotechnology, 01 natural sciences, Phase-change material, Electronic, Optical and Magnetic Materials, law.invention, Phase-change memory, chemistry, law, Transmission electron microscopy, 0103 physical sciences, Electrical measurements, Electrical and Electronic Engineering, Composite material, skin and connective tissue diseases, 0210 nano-technology, Spark plug, Layer (electronics), Electrical conductor

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d5fd1edc12c8e91e88537712e2b23e91
https://doi.org/10.1109/ted.2013.2264323

المؤلفون: Adam Dobri, F. Balestra, S. Jeannot, Luca Perniola, C. Jahan, Fausto Piazza, Jean Coignus

المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

المصدر: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 69, pp.47-51. ⟨10.1016/j.microrel.2016.12.006⟩
Microelectronics Reliability, 2017, 69, pp.47-51. ⟨10.1016/j.microrel.2016.12.006⟩

مصطلحات موضوعية: Materials science, ONO, Silicon dioxide, Oxide, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Flash memory, chemistry.chemical_compound, 40 nm embedded flash, Gate oxide, Electric field, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Safety, Risk, Reliability and Quality, Floating gate, Leakage (electronics), 010302 applied physics, Hardware_MEMORYSTRUCTURES, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Silicon nitride, Leakage current, Optoelectronics, business, Voltage drop

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01ee48b0b7b8fcf1e9e0b09db2fd63c6
https://hal.archives-ouvertes.fr/hal-02003020

المؤلفون: L. PERNIOLA, E. NOWAK, P. SCHEIBLIN, C. JAHAN, G. PANANAKAKIS, J. RAZAFINDRAMORA, B. DE SALVO, S. DELEONIBUS, G. REIMBOLD, F. BOULANGER, IANNACCONE, GIUSEPPE

المساهمون: L., Perniola, E., Nowak, Iannaccone, Giuseppe, P., Scheiblin, C., Jahan, G., Pananakaki, J., Razafindramora, B., DE SALVO, S., Deleonibu, G., Reimbold, F., Boulanger

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781424415083; info:eu-repo/semantics/altIdentifier/wos/2-s2.0-50249172806; ispartofbook:Electron Devices Meeting, 2007. IEDM 2007. IEEE International; Electron Devices Meeting; firstpage:943; lastpage:946; numberofpages:4; http://hdl.handle.net/11568/114646

الاتاحة: http://hdl.handle.net/11568/114646
https://doi.org/10.1109/IEDM.2007.4419108

المؤلفون: J. J. RAZAFINDRAMORA, L. PERNIOLA, C. JAHAN, P. SCHEIBLIN, M. GLY, C. VIZIOZ, C. CARABASSE, F. BOULANGER, B. DE SALVO, S. DELEONIBUS, S. LOMBARDO, C. BONGIORNO, IANNACCONE, GIUSEPPE

المساهمون: J. J., Razafindramora, L., Perniola, C., Jahan, P., Scheiblin, M., Gly, C., Vizioz, C., Carabasse, F., Boulanger, B., DE SALVO, S., Deleonibu, S., Lombardo, C., Bongiorno, Iannaccone, Giuseppe

Relation: ispartofbook:Proc. of ESSDERC; ESSDERC; firstpage:C4L-B3-1; lastpage:C4L-B3-4; http://hdl.handle.net/11568/117239

الاتاحة: http://hdl.handle.net/11568/117239

المؤلفون: C. Jahan, J. F. Nodin, S. Souiki, Luca Perniola, A. Persico, Veronique Sousa, Vincent Delaye, B. De Salvo, F. Aussenac, Gabriele Navarro, O. Cueto

المصدر: Microelectronics Reliability. 52:1928-1931

مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Threshold voltage, Phase-change memory, Reliability (semiconductor), Operating temperature, Optoelectronics, Electrical and Electronic Engineering, Current (fluid), Safety, Risk, Reliability and Quality, business, Reset (computing)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::53bd41f0f2497737436b3ba1ca08a0a9
https://doi.org/10.1016/j.microrel.2012.06.017