المؤلفون: T. Mota Frutuoso, X. Garros, P. Batude, L. Brunet, J. Lacord, B. Sklenard, V. Lapras, C. Fenouillet-Beranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, E. Catapano, M. Casse, J. Lugo-Alvarez, P. Ferrari, F. Gaillard

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), IEEE

المصدر: IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022)
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Jun 2022, Honolulu (HI), United States. ⟨10.1109/VLSITechnologyandCir46769.2022.9830504⟩
IEEELink

مصطلحات موضوعية: resistance, silicon-on-insulator, three-dimensional displays, VLSI (Very Large Scale Integration), PACS 85.42, capacitance, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, predictive models, performance evaluation

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9eef2750dbb3aeee813a581581b63000
https://hal.science/hal-04069091

المؤلفون: P. Batude, O. Billoint, S. Thuries, P. Malinge, C. Fenouillet-Beranger, A. Peizerat, G. Sicard, P. Vivet, S. Reboh, C. Cavalcante, L. Brunet, M. Ribotta, L. Brevard, X. Garros, T. Mota Frutuoso, B. Sklenard, J. Lacord, J. Kanyandekwe, S. Kerdiles, P. Sideris, C. Theodorou, V. Lapras, M. Mouhdach, G. Gaudin, G. Besnard, I. Radu, F. Ponthenier, A. Farcy, E. Jesse, F. Guyader, T. Matheret, P. Brunet, F. Milesi, L. Le Van-Jodin, A. Sarrazin, B. Perrin, C. Moulin, S. Maitrejean, M. Alepidis, I. Ionica, S. Cristoloveanu, F. Gaillard, M. Vinet, F. Andrieu, J. Arcamone, E. Ollier

المصدر: 2021 IEEE International Electron Devices Meeting (IEDM).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a954addef7e27e3dfae349b36fd38937
https://doi.org/10.1109/iedm19574.2021.9720671

المؤلفون: F. Gaillard, C. Fenouillet-Beranger, X. Garros, Joris Lacord, Jose Lugo-Alvarez, Louis Gerrer, M. Casse, Philippe Ferrari, Laurent Brunet, E. Catapano, Francois Andrieu, T. Mota Frutuoso

المصدر: IRPS

مصطلحات موضوعية: Materials science, Silicon, business.industry, Interface (computing), Transistor, Oxide, chemistry.chemical_element, Silicon on insulator, Temperature measurement, law.invention, chemistry.chemical_compound, Reliability (semiconductor), chemistry, law, Optoelectronics, Degradation (geology), business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b798b8f9f057b1cb27f5e46793857d71
https://doi.org/10.1109/irps46558.2021.9405107

المؤلفون: Perrine Batude, Gerard Ghibaudo, Gilles Sicard, O. Rozeau, C. Fenouillet-Beranger, Christoforos G. Theodorou, Francois Andrieu, Sebastien Kerdiles, P. Sideris, Jose Lugo-Alvarez, Laurent Brunet, P. Acosta-Alba, J.-P. Colinge

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)

المصدر: 2019 IEEE International Electron Devices Meeting (IEDM)
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.3.4.1-3.4.4, ⟨10.1109/IEDM19573.2019.8993493⟩

مصطلحات موضوعية: 010302 applied physics, Digital electronics, Materials science, business.industry, Sram cell, 01 natural sciences, Active devices, Dynamic coupling, [SPI.TRON]Engineering Sciences [physics]/Electronics, Crosstalk, 0103 physical sciences, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Sheet resistance, [PHYS.PHYS.PHYS-DATA-AN]Physics [physics]/Physics [physics]/Data Analysis, Statistics and Probability [physics.data-an], Ground plane

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee68b1ce50791417b94da9ca932a2953
https://hal.science/hal-02969757

المؤلفون: A. Benoist, S. Bernasconi, G. Audoit, C. Guedj, Philippe Candelier, C. Fenouillet-Beranger, T. Dewolf, L. Perniola, E. Jalaguier, S. Jeannot, C. Charpin, Stephane Denorme, E. Vianello, M. Azzaz, Daniele Garbin, C. Cagli

المصدر: Solid-State Electronics. 125:182-188

مصطلحات موضوعية: 010302 applied physics, Stack-based memory allocation, Materials science, Equivalent series resistance, business.industry, Bilayer, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Resistive random-access memory, chemistry, CMOS, 0103 physical sciences, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, Tin, business, Layer (electronics), Quantum tunnelling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::69d5eccfc71c5f64a81a84ad88c54bc6
https://doi.org/10.1016/j.sse.2016.07.007

المؤلفون: Francois Andrieu, Joris Lacord, R. Berthelon, Laurent Brunet, A. Makosiej, Olivier Weber, C. Fenouillet-Beranger, X. Garros, G. Cibrario, D. Lattard, J.-P. Colinge, J. Cluzel, Lorenzo Ciampolini, D. Bosch, Perrine Batude, F. Balestra, Bastien Giraud

المصدر: Solid-State Electronics. 168:107720

مصطلحات موضوعية: 010302 applied physics, Hardware_MEMORYSTRUCTURES, Computer science, Transistor, Spice, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, Reduction (complexity), Planar, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Electronic engineering, Static random-access memory, Back bias, Electrical and Electronic Engineering, 0210 nano-technology, Access time

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::693fb96b0d9182cfb46ea634695f9b9a
https://doi.org/10.1016/j.sse.2019.107720

المؤلفون: J-F Nodin, Gabriel Molas, Etienne Nowak, Elisa Vianello, D. R. B. Ly, C. Fenouillet-Beranger, J.-P. Noel, Giacomo Indiveri, Bastien Giraud, Alessandro Grossi, Gilbert Sassine, N. Castellani

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institute of Neuroinformatics [Zürich] (INI), Universität Zürich [Zürich] = University of Zurich (UZH)- Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), IEEE

المصدر: 2018 IEEE International Electron Devices Meeting (IEDM 2018)
2018 IEEE International Electron Devices Meeting (IEDM 2018), IEEE, Dec 2018, San Francisco, CA, United States. pp.20.3.1-20.3.4, ⟨10.1109/IEDM.2018.8614603⟩

مصطلحات موضوعية: [INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], Hardware_MEMORYSTRUCTURES, Computer science, 020208 electrical & electronic engineering, 02 engineering and technology, Content-addressable memory, [INFO.INFO-NE]Computer Science [cs]/Neural and Evolutionary Computing [cs.NE], 020202 computer hardware & architecture, Resistive random-access memory, Reliability (semiconductor), Neuromorphic engineering, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, [INFO.INFO-ET]Computer Science [cs]/Emerging Technologies [cs.ET], Static random-access memory, Latency (engineering), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Standby power, Block (data storage)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d10faf3c63a9f463455a0e0925d8f5cc
https://hal.archives-ouvertes.fr/hal-02939330/document

المؤلفون: Elisa Vianello, Etienne Nowak, Damien Querlioz, C. Fenouillet-Beranger, Alessandro Grossi, D. R. B. Ly

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

المصدر: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (44), pp.444002. ⟨10.1088/1361-6463/aad954⟩
Journal of Physics D: Applied Physics, 2018, 51 (44), pp.444002. ⟨10.1088/1361-6463/aad954⟩

مصطلحات موضوعية: 0301 basic medicine, [INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], Spiking Neural Network (SNN), Acoustics and Ultrasonics, [INFO.INFO-NE]Computer Science [cs]/Neural and Evolutionary Computing [cs.NE], unsupervised learning, [INFO.INFO-AI]Computer Science [cs]/Artificial Intelligence [cs.AI], Reduction (complexity), 03 medical and health sciences, 0302 clinical medicine, Robustness (computer science), Resistive switching memory (RRAM), Network performance, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Spiking neural network, [PHYS]Physics [physics], Noise (signal processing), business.industry, variability, Pattern recognition, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Power (physics), Resistive random-access memory, 030104 developmental biology, Unsupervised learning, artificial synapse, [INFO.INFO-ET]Computer Science [cs]/Emerging Technologies [cs.ET], Artificial intelligence, business, 030217 neurology & neurosurgery

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::718b35315ebbf62fce3b4aac6004ea56
https://hal.archives-ouvertes.fr/hal-02350259

المؤلفون: C. Fenouillet-Beranger, L. Brunet, E. Arnoux, V. Lu, V. Beugin, C. Guerin, S.Del Medico, V. Loup, M.-P. Samson, B. Previtali, C. Tabone, N. Rambal, N. Rochat, D. Benoit, F. Allain, G. Romano, T. Artemisia, M. Casse, X. Garros, H. Dansas, A. Grenier, P. Batude, M. Vinet

المصدر: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.

مصطلحات موضوعية: Materials science, Offset (computer science), business.industry, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6eb08d5f83aa3104ff40bd2a4fd1cd05
https://doi.org/10.7567/ssdm.2018.b-6-02

المؤلفون: M. Vinet, M. Casse, F. Gaillard, Perrine Batude, Gerard Ghibaudo, A. Tsiara, C. Fenouillet-Beranger, K. Triantopoulos, Laurent Brunet, X. Garros

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nano 2017, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)

المصدر: 2018 VLSI-Technology Technical Digest
2018 IEEE Symposium on VLSI Technology
2018 IEEE Symposium on VLSI Technology, Jun 2018, Honolulu, United States. pp.75-76, ⟨10.1109/VLSIT.2018.8510625⟩

مصطلحات موضوعية: 010302 applied physics, Computer science, Transistor, Process (computing), 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, PMOS logic, law.invention, Reliability engineering, Reliability (semiconductor), law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Inverter, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, NMOS logic

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33ffeae25bfb98a71b7c4cd8de991640
https://hal.archives-ouvertes.fr/hal-02050384

المؤلفون: J.-P. Colinge, Gerard Ghibaudo, Perrine Batude, C-M. V. Lu, F. Allain, C. Le Royer, C. Fenouillet-Beranger, M. Vinet, Sorin Cristoloveanu, C. Diaz Llorente, Sebastien Martinie

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010)

المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2018, 144, pp.78-85. ⟨10.1016/j.sse.2018.03.006⟩
Solid-State Electronics, 2018, 144, pp.78-85. ⟨10.1016/j.sse.2018.03.006⟩

مصطلحات موضوعية: Materials science, Fabrication, Tunnel FET, Schottky barrier, Silicon on insulator, 02 engineering and technology, Epitaxy, 01 natural sciences, Planar, TFET, 0103 physical sciences, Materials Chemistry, Low temperature, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum tunnelling, 3D integration, 010302 applied physics, SOI, business.industry, SPER, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Tunnelling BTBT, Electronic, Optical and Magnetic Materials, Threshold voltage, Optoelectronics, 0210 nano-technology, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::132343776d14328efad9eaef1849964b
https://hal.archives-ouvertes.fr/hal-01948037

المؤلفون: Thilo Werner, Thomas Dalgaty, Alessandro Grossi, D. R. B. Ly, C. Fenouillet-Beranger, Elisa Vianello, Etienne Nowak

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: 2018 IEEE International Symposium on Circuits and Systems (ISCAS)
2018 IEEE International Symposium on Circuits and Systems (ISCAS), May 2018, Florence, France. pp.1-5, ⟨10.1109/ISCAS.2018.8351161⟩
ISCAS

مصطلحات موضوعية: 010302 applied physics, [INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], Artificial neural network, Computer science, 020208 electrical & electronic engineering, 02 engineering and technology, [INFO.INFO-NE]Computer Science [cs]/Neural and Evolutionary Computing [cs.NE], 01 natural sciences, Resistive random-access memory, [INFO.INFO-AI]Computer Science [cs]/Artificial Intelligence [cs.AI], Synapse, Margin (machine learning), Robustness (computer science), Video tracking, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Unsupervised learning, Spike (software development), [INFO.INFO-ET]Computer Science [cs]/Emerging Technologies [cs.ET], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Algorithm

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::202a9bfc87aedda2a7f4d757a7911173
https://hal.archives-ouvertes.fr/hal-02939221/file/PID5223831.pdf

المؤلفون: Sorin Cristoloveanu, C. Fenouillet-Beranger, Philippe Ferrari, Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: Solid-State Electronics
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩

مصطلحات موضوعية: Materials science, Z3-FET, Z2-FET, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, SOI, 010302 applied physics, business.industry, CMOS, Electrical engineering, Swing, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Impact ionization, Sharp switch, Modulation, Band modulation, Free surface, Optoelectronics, 0210 nano-technology, business, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4ade0a70d60cdc511cb1a1affe7908f
https://doi.org/10.1016/j.sse.2015.10.010

المؤلفون: C. Scibetta, S. Beaurepaire, F. Fournel, A. Roman, S. Chevalliez, C. Fenouillet-Beranger, X. Garros, Xavier Federspiel, J. Aubin, V. Larrey, Perrine Batude, F. Kouemeni-Tchouake, F. Ponthenier, J-B. Pin, Daniel Scevola, Lucile Arnaud, F. Aussenac, C. Guerin, P. Acosta-Alba, V. Mazzocchi, Sebastien Kerdiles, H. Fontaine, Shay Reboh, P. Perreau, Sylvain Maitrejean, Laurent Brunet, N. Rambal, M. Vinet, Pascal Besson, Christophe Morales, T. Lardin, V. Balan, Vincent Jousseaume, D. Ney, F. Mazen, Francois Andrieu

المصدر: 2018 IEEE International Electron Devices Meeting (IEDM)

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Order (ring theory), 02 engineering and technology, Epitaxy, 01 natural sciences, Active devices, 020202 computer hardware & architecture, Design for manufacturability, Reliability (semiconductor), CMOS, Surface preparation, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Wafer, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::206d35153ba5f44ca9aa06493e9c2b57

المؤلفون: Laurent Brunet, R. Fournel, Perrine Batude, Sebastien Thuries, O. Billoint, M. Vinet, D. Lattard, C. Fenouillet-Beranger, Francois Andrieu

المصدر: 2018 International Conference on IC Design & Technology (ICICDT)
ICICDT

مصطلحات موضوعية: 010302 applied physics, Digital electronics, Computer science, business.industry, Circuit design, Transistor, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Manufacturing cost, 020202 computer hardware & architecture, law.invention, CMOS, law, Logic gate, 0103 physical sciences, Process integration, 0202 electrical engineering, electronic engineering, information engineering, Benchmark (computing), Electronic engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2967a4647201eb99bdfa0a94efdc8cb

المؤلفون: C. Fenouillet-Beranger, Perrine Batude, M. Casse, B. Mathieu, G. Reimbold, Gerard Ghibaudo, Laurent Brunet, M. Vinet, K. Triantopoulos

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), nano 2017, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010)

المصدر: 2017 IEDM Technical Digest
2017 IEEE International Electron Devices Meeting (IEDM)
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.7.6.1-7.6.4, ⟨10.1109/IEDM.2017.8268348⟩

مصطلحات موضوعية: 010302 applied physics, Work (thermodynamics), Materials science, Transistor, Dielectric, Integrated circuit, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Subthreshold slope, law.invention, law, 0103 physical sciences, Thermal, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, State (computer science), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Communication channel

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::640d5fdfc95e64cdca800fe42ef9b135
https://hal.archives-ouvertes.fr/hal-02050229

المؤلفون: J. Micout, M. Casse, J.-P. Colinge, L. Desvoivres, Vincent Delaye, C. Fenouillet-Beranger, S. Barraud, X. Garros, Perrine Batude, J.M. Hartmann, R. Bortolin, V. Mazzocchi, Frédéric Mazen, G. Romano, B. Mathieu, N. Rambal, V. Balan, Zineb Saghi, F. Allain, M.-P. Samson, P. Besombes, C. Comboroure, M. Vinet, Quentin Rafhay, Joris Lacord, Claude Tabone, Alain Toffoli, Gerard Ghibaudo, C. Vizioz, Benoit Sklenard, V. Lapras, L. Lachal, Laurent Brunet, Virginie Loup

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010)

المصدر: 2017 IEDM Technical Digest
2017 IEEE International Electron Devices Meeting (IEDM)
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩

مصطلحات موضوعية: Materials science, Fabrication, business.industry, 020208 electrical & electronic engineering, Doping, Recrystallization (metallurgy), 02 engineering and technology, Epitaxy, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, 020201 artificial intelligence & image processing, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f667185abf93ecbc97dd4a441fb34f4d
https://hal.archives-ouvertes.fr/hal-01959097

المؤلفون: C. Fenouillet-Beranger, Perrine Batude, G. Cibrario, G. Tricaud, R. Boumchedda, Pierre Morin, Franck Arnaud, Laurent Brunet, O. Rozeau, Bastien Giraud, Sebastien Thuries, M. Vinet, Joris Lacord, R. Berthelon, S. Guissi, D. Fried, B. Mathieu, O. Billoint, Francois Andrieu, J.-P. Noel, A. Ayres de Sousa, E. Avelar

المصدر: 2017 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Transistor, Spice, Electrical engineering, 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, law.invention, Power (physics), law, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Inverter, Static random-access memory, business, Low voltage, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0dc4ba1dc97a9317eb210e8ddb6f1d5d
https://doi.org/10.1109/iedm.2017.8268428

المؤلفون: C. Fenouillet-Beranger, Laurent Brunet, Perrine Batude, K. Triantopoulos, G. Reimbold, Gerard Ghibaudo, Mikael Casse

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nano 2017, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010)

المصدر: 2017 S3S Proceedings
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Thermal resistance, Transistor, 01 natural sciences, PMOS logic, Ion, law.invention, law, 0103 physical sciences, Thermal, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Current (fluid), Thin film, business, NMOS logic

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34259974b072520a825fcbb11b1754b2
https://doi.org/10.1109/s3s.2017.8309239

المؤلفون: C-M. V. Lu, F. Martin, Gerard Ghibaudo, R. Gassilloud, Perrine Batude, G. Reimbold, O. Faynot, C. Fenouillet-Beranger, X. Garros, A. Tsiara

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), nano 2017, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)

المصدر: 2017 S3S Proceedings
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.24.2, ⟨10.1109/S3S.2017.8309219⟩

مصطلحات موضوعية: 010302 applied physics, reliability, Negative-bias temperature instability, Materials science, Annealing (metallurgy), business.industry, gate stack, Nanowire, Gate stack, Equivalent oxide thickness, low temperature, Dopant Activation, 01 natural sciences, nanowires, 3D sequential integration, 0103 physical sciences, Optoelectronics, process, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Forming gas, business, Scaling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5ded627d74b7326e50caba8f65cf3ec
https://doi.org/10.1109/s3s.2017.8309219