المؤلفون: Rossi, Chiara, Burenkov, Alex, Pichler, Peter, Bär, Eberhard, Müller, Jonas, Larrieu, Guilhem

مصطلحات موضوعية: Nanowire FET, 3D TCAD, Process simulation, Device simulation, Oxidation, Boron segregation, Junctionless transistor, Gate-all-around

جغرافية الموضوع: https://doi.org/10.1016/j.sse.2022.108551

Relation: Solid-State Electronics; #PLACEHOLDER_PARENT_METADATA_VALUE#; https://publica.fraunhofer.de/handle/publica/429924

الاتاحة: https://publica.fraunhofer.de/handle/publica/429924
https://doi.org/10.1016/j.sse.2022.108551

المؤلفون: Burenkov, Alex, Lorenz, Juergen

المصدر: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ; page 85-88

الاتاحة: http://dx.doi.org/10.1109/sispad.2016.7605154
http://xplorestaging.ieee.org/ielx7/7588793/7605130/07605154.pdf?arnumber=7605154

المؤلفون: Wang, Xingsheng, Reid, Dave, Wang, Liping, Millar, Campbell, Burenkov, Alex, Evanschitzky, Peter, Baer, Eberhard, Lorenz, Juergen, Asenov, Asen

مصطلحات موضوعية: design technology co-optimization, FinFET, process, process variation, SRAM, statistical variability

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2016; International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016; SUPERTHEME; REMINDER; 318458; 687931; https://publica.fraunhofer.de/handle/publica/393481

الاتاحة: https://publica.fraunhofer.de/handle/publica/393481
https://doi.org/10.1109/SISPAD.2016.7605207

المؤلفون: Baer, Eberhard, Burenkov, Alex, Evanschitzky, Peter, Lorenz, Juergen

مصطلحات موضوعية: FinFET, SRAM cell, self-aligned double pattering, litho-etch-litho-etch double patterning, process simulation, systematic variations

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2016; International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016; SUPERTHEME; 318458; https://publica.fraunhofer.de/handle/publica/393482

الاتاحة: https://publica.fraunhofer.de/handle/publica/393482
https://doi.org/10.1109/SISPAD.2016.7605206

المؤلفون: Burenkov, Alex, Lorenz, Juergen, Spiegel, Yohann, Torregrosa, Frank

المصدر: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ; page 218-221

الاتاحة: http://dx.doi.org/10.1109/sispad.2015.7292298
http://xplorestaging.ieee.org/ielx7/7274904/7292241/07292298.pdf?arnumber=7292298

المؤلفون: Wang, Xingsheng, Reid, Dave, Wang, Liping, Burenkov, Alex, Millar, Campbell, Lorenz, Juergen, Asenov, Asen

المصدر: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

الاتاحة: http://dx.doi.org/10.1109/sispad.2015.7292325
http://xplorestaging.ieee.org/ielx7/7274904/7292241/07292325.pdf?arnumber=7292325

المؤلفون: Burenkov, Alex, Lorenz, Jürgen

مصطلحات موضوعية: FinFET, bulk silicon, thermo-mechanical effect

Time: 537

Relation: European Materials Research Society (Spring Meeting) 2015; Symposium Z "Nanomaterials and Processes for Advanced Semiconductor CMOS Devices" 2015; Materials Science in Semiconductor Processing; SUPERTHEME; 318458; https://publica.fraunhofer.de/handle/publica/241786

الاتاحة: https://publica.fraunhofer.de/handle/publica/241786
https://doi.org/10.1016/j.mssp.2015.07.022

المؤلفون: Burenkov, Alex, Matthus, Christian David, Erlbacher, Tobias

مصطلحات موضوعية: 4H-SiC photodiode, ion implantation, photo-responsivity, numerical simulation

Time: 681

Relation: IEEE Sensors Journal; MSP; 611887; https://publica.fraunhofer.de/handle/publica/244644

الاتاحة: https://publica.fraunhofer.de/handle/publica/244644
https://doi.org/10.1109/JSEN.2016.2539598

المؤلفون: Burenkov, Alex, Lorenz, Jürgen, Spiegel, Yohann, Torregrosa, Frank

مصطلحات موضوعية: plasma immersion ion implantation, AsH3 plasma, doping profiles, silicon, simulation, SIMS

Relation: International Conference on Ion Implantation Technology (IIT) 2014; 20th International Conference on Ion Implantation Technology, IIT 2014. Proceedings; SUPERTHEME; 318458; https://publica.fraunhofer.de/handle/publica/387007

الاتاحة: https://publica.fraunhofer.de/handle/publica/387007
https://doi.org/10.1109/IIT.2014.6940004

المؤلفون: Lorenz, Jürgen, Bär, Eberhard, Burenkov, Alex, Evanschitzky, Peter, Asenov, Asen, Wang, Liping, Wang, Xingsheng, Brown, Andrew, Millar, Campbell, Reid, David

مصطلحات موضوعية: process variations, systematic variations, statistical variations, lithography, etching, Equipment Simulation, process simulation, device simulation

Time: 670, 620, 530

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014; International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014. Proceedings; SUPERTHEME; 318458; https://publica.fraunhofer.de/handle/publica/385246

الاتاحة: https://publica.fraunhofer.de/handle/publica/385246
https://doi.org/10.1109/SISPAD.2014.6931620

المؤلفون: Wang, Xingsheng, Reid, Dave, Wang, Liping, Burenkov, Alex, Millar, Campbell, Cheng, Binjie, Lange, Andre, Lorenz, Jürgen, Bär, Eberhard, Asenov, Asen

مصطلحات موضوعية: compact model, MOSFET, variability

Time: 621, 670, 620, 530, 004

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014; International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014. Proceedings; SUPERTHEME; 318458; https://publica.fraunhofer.de/handle/publica/385249

الاتاحة: https://publica.fraunhofer.de/handle/publica/385249
https://doi.org/10.1109/SISPAD.2014.6931621

المؤلفون: Burenkov, Alex, Bär, Eberhard, Boianceanu, Cristian

مصطلحات موضوعية: Power MOSFET, Thermal simulation, compact model, interconnects

Time: 670, 620, 530

Relation: International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) 2014; 20th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2014; RELY; 01M3091; https://publica.fraunhofer.de/handle/publica/385324

الاتاحة: https://publica.fraunhofer.de/handle/publica/385324
https://doi.org/10.1109/THERMINIC.2014.6972518

المؤلفون: Burenkov, Alex, Belko, Viktor, Lorenz, Jurgen

المصدر: 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) ; volume 117, page 305-308

الاتاحة: http://dx.doi.org/10.1109/therminic.2013.6675230
http://xplorestaging.ieee.org/ielx7/6662496/6675177/06675230.pdf?arnumber=6675230

المؤلفون: Evanschitzky, Peter, Burenkov, Alex, Lorenz, Jürgen

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013; 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013; SUPERTHEME; 318458; https://publica.fraunhofer.de/handle/publica/382461

الاتاحة: https://publica.fraunhofer.de/handle/publica/382461
https://doi.org/10.1109/SISPAD.2013.6650585

المؤلفون: Burenkov, Alex, Lorenz, Jürgen

مصطلحات موضوعية: SOI MOSFET, self-heating, BSIMSOI4, ITRS, thermal aware compact model

Time: 670, 620, 530

Relation: Fachtagung Zuverlässigkeit und Entwurf 2013; Zuverlässigkeit und Entwurf; THERMINATOR; 248603; https://publica.fraunhofer.de/handle/publica/380874

الاتاحة: https://publica.fraunhofer.de/handle/publica/380874

المؤلفون: Burenkov, Alex, Baer, Eberhard, Lorenz, Juergen, Kampen, Christian

مصطلحات موضوعية: SRAM, process variation, SOI MOSFET, correlation, simulation

Time: 670, 620, 530

وصف الملف: application/pdf

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2012; https://publica.fraunhofer.de/handle/publica/376610

الاتاحة: https://publica.fraunhofer.de/handle/publica/376610
https://doi.org/10.24406/publica-fhg-376610

المؤلفون: Kampen, Christian, Burenkov, Alex, Lorenz, Jürgen

مصطلحات موضوعية: field effect, MOS transistor, TCAD simulation, silicon

Time: 670, 620, 530

وصف الملف: application/pdf

Relation: European Solid-State Device Research Conference (ESSDERC) 2011; 41st European Solid-State Device Research Conference, ESSDERC 2011. Proceedings; https://publica.fraunhofer.de/handle/publica/372974

الاتاحة: https://publica.fraunhofer.de/handle/publica/372974
https://doi.org/10.1109/ESSDERC.2011.6044215

المؤلفون: Uhnevionak, Viktoryia, Burenkov, Alex, Strenger, Christian, Ortiz, Guillermo, Mortet, Vincent, Bedel-Pereira, Eléna, Cristiano, Fuccio, Bauer, Anton, J, Pichler, Peter

المساهمون: Fraunhofer Institute for Integrated Circuits (Fraunhofer IIS), Fraunhofer (Fraunhofer-Gesellschaft), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institute of Physics of the Czech Academy of Sciences (FZU / CAS), Czech Academy of Sciences Prague (CAS)

المصدر: ISSN: 0255-5476.

مصطلحات موضوعية: [PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI]Engineering Sciences [physics], [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-01921384; https://hal.science/hal-01921384

الاتاحة: https://hal.science/hal-01921384
https://doi.org/10.4028/www.scientific.net/msf.821-823.737

المؤلفون: Uhnevionak, Viktoryia, Burenkov, Alex, Strenger, Christian, Mortet, Vincent, Bedel-Pereira, Eléna, Cristiano, Fuccio, Bauer, Anton, J, Pichler, Peter

المساهمون: Fraunhofer Institute for Integrated Circuits (Fraunhofer IIS), Fraunhofer (Fraunhofer-Gesellschaft), Institute of Physics of the Czech Academy of Sciences (FZU / CAS), Czech Academy of Sciences Prague (CAS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)

المصدر: ISSN: 0255-5476.

مصطلحات موضوعية: [PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI]Engineering Sciences [physics], [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-01921813; https://hal.science/hal-01921813

الاتاحة: https://hal.science/hal-01921813
https://doi.org/10.4028/www.scientific.net/msf.778-780.483

المؤلفون: Nagy, Roland, Burenkov, Alex, Lorenz, Jürgen

المصدر: Journal of Computational Electronics ; volume 14, issue 1, page 192-202 ; ISSN 1569-8025 1572-8137

الاتاحة: http://dx.doi.org/10.1007/s10825-014-0638-0
http://link.springer.com/content/pdf/10.1007/s10825-014-0638-0.pdf
http://link.springer.com/article/10.1007/s10825-014-0638-0/fulltext.html
http://link.springer.com/content/pdf/10.1007/s10825-014-0638-0