المؤلفون: Holst, J., Hoffmann, A., Broser, I., Frey, T., Schöttker, B., As, D.J., Schikora, D., Lischka, K.

المصدر: MRS Internet Journal of Nitride Semiconductor Research ; volume 4, issue S1, page 75-80 ; ISSN 1092-5783

الاتاحة: http://dx.doi.org/10.1557/s109257830000226x
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S109257830000226X

المؤلفون: Broser, I.

المصدر: Physikalische Blätter ; volume 54, issue 10, page 935-937 ; ISSN 0031-9279 1521-3722

الاتاحة: http://dx.doi.org/10.1002/phbl.19980541012
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fphbl.19980541012
https://onlinelibrary.wiley.com/doi/pdf/10.1002/phbl.19980541012

المؤلفون: Holst, J.-Chr., Eckey, L., Hoffmann, A., Broser, I., Amano, H., Akasaki, I.

المصدر: MRS Internet Journal of Nitride Semiconductor Research ; volume 2 ; ISSN 1092-5783

الاتاحة: http://dx.doi.org/10.1557/s1092578300001514
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1092578300001514

المؤلفون: Broser, I., Rosenzweig, M.

المصدر: Application of High Magnetic Fields in Semiconductor Physics ; Lecture Notes in Physics ; page 229-232 ; ISBN 9783540119968 9783540394723

الاتاحة: http://dx.doi.org/10.1007/3-540-11996-5_30
http://link.springer.com/content/pdf/10.1007/3-540-11996-5_30.pdf

المؤلفون: Broser, I.

المصدر: Advances in Solid State Physics ; Festkörperprobleme V ; page 283-318 ; ISBN 9783540753179 9783540753186

الاتاحة: http://dx.doi.org/10.1007/bfb0119279
http://link.springer.com/content/pdf/10.1007/BFb0119279.pdf

المؤلفون: Heitz, R., Eckey, L., Hoffmann, A., Broser, I.

المصدر: Wide-Band-Gap Semiconductors ; page 234-238 ; ISBN 9780444815736

الاتاحة: http://dx.doi.org/10.1016/b978-0-444-81573-6.50038-4

المؤلفون: Thurian, P., Heitz, R., Jentzsch, T., Hoffmann, A., Broser, I.

المصدر: Wide-Band-Gap Semiconductors ; page 239-244 ; ISBN 9780444815736

الاتاحة: http://dx.doi.org/10.1016/b978-0-444-81573-6.50039-6

المؤلفون: Kudlek, G.H., Pohl, U.W., Fricke, Ch., Heitz, R., Hoffmann, A., Gutowski, J., Broser, I.

المصدر: Wide-Band-Gap Semiconductors ; page 325-331 ; ISBN 9780444815736

الاتاحة: http://dx.doi.org/10.1016/b978-0-444-81573-6.50050-5

المؤلفون: Accomo, R., Achtziger, N., Adams, S.J.A., Akasaki, I., Albert, J.P., Amano, H., André, R., Antonelli, A., Asif Khan, M., Aulombard, R.L., Austin, R.F., Balestrino, G., Baltramiejūnas, R., Bechstedt, F., Bécourt, N., Bergman, L., Bernholc, J., Bertho, D., Bertoni, CM., Billat, S., Boćkowski, M., Bodin, C., Bodin-Deshayes, C., Boiko, E.B., Boring, P., Bouhelal, A., Bratina, G., Brennan, K.F., Briddon, P.R., Briot, O., Broser, I., Bsiesy, A., Bucher, E., Burchard, A., Cantwell, G., Carter, C.H., Castro, T., Cavenett, B.C., Chadi, D.J., Chen, K.M., Chen, X., Cheng, H., Choyke, W.J., Christensen, N.E., Cibert, J., Cingolani, R., Cloitre, T., Cohen, P.I., Collins, A.T., Cotal, H.L.

المصدر: Wide-Band-Gap Semiconductors ; page 609-611 ; ISBN 9780444815736

الاتاحة: http://dx.doi.org/10.1016/b978-0-444-81573-6.50099-2

المؤلفون: Broser, I., Hoffmann, A., Kutzer, V.

المصدر: physica status solidi (b) ; volume 229, issue 2, page 617-620 ; ISSN 0370-1972 1521-3951

الاتاحة: http://dx.doi.org/10.1002/1521-3951(200201)229:2%3C617::aid-pssb617%3E3.0.co%3B2-f
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F1521-3951(200201)229:2%3C617::AID-PSSB617%3E3.0.CO%3B2-F
https://onlinelibrary.wiley.com/doi/full/10.1002/1521-3951(200201)229:2%3C617::AID-PSSB617%3E3.0.CO%3B2-F

المؤلفون: Holst, J., Hoffmann, A., Broser, I., Rudloff, D., Bertram, F., Riemann, T., Christen, J., Frey, T., As, D.J., Schikora, D., Lischka, K.

المصدر: physica status solidi (b) ; volume 216, issue 1, page 471-476 ; ISSN 0370-1972 1521-3951

الاتاحة: http://dx.doi.org/10.1002/(sici)1521-3951(199911)216:1%3C471::aid-pssb471%3E3.0.co%3B2-o
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F(SICI)1521-3951(199911)216:1%3C471::AID-PSSB471%3E3.0.CO%3B2-O
https://onlinelibrary.wiley.com/doi/full/10.1002/(SICI)1521-3951(199911)216:1%3C471::AID-PSSB471%3E3.0.CO%3B2-O

المؤلفون: Holst, J., Hoffmann, A., Broser, I., Schöttker, B., As, D. J., Schikora, D., Lischka, K.

المصدر: Applied Physics Letters ; volume 74, issue 14, page 1966-1968 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.123715
https://pubs.aip.org/aip/apl/article-pdf/74/14/1966/18540685/1966_1_online.pdf

المؤلفون: Holst, J., Hoffmann, A., Broser, I., Frey, T., Schöttker, B., As, D.J., Schikora, D., Lischka, K.

المصدر: MRS Proceedings ; volume 537 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-537-g2.3
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400287939

المؤلفون: Dahan, P, Fleurov, V, Thurian, P, Heitz, R, Hoffmann, A, Broser, I

المصدر: Journal of Physics: Condensed Matter ; volume 10, issue 9, page 2007-2019 ; ISSN 0953-8984 1361-648X

الاتاحة: http://dx.doi.org/10.1088/0953-8984/10/9/007

المؤلفون: Kutzer, V., Straßburg, M., Hoffmann, A., Broser, I., Pohl, U.W., Ledentsov, N.N., Bimberg, D., Ivanov, S.V.

المصدر: Journal of Crystal Growth ; volume 184-185, page 632-636 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/s0022-0248(98)80133-4
https://api.elsevier.com/content/article/PII:S0022024898801334?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024898801334?httpAccept=text/plain

المؤلفون: Born, H., Thurian, P., Surkova, T., Hoffmann, A., Busse, W., Gumlich, H.-E., Broser, I., Giriat, W.

المصدر: Journal of Crystal Growth ; volume 184-185, page 1132-1136 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/s0022-0248(98)80237-6
https://api.elsevier.com/content/article/PII:S0022024898802376?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024898802376?httpAccept=text/plain

المؤلفون: Dahan, P., Fleurov, V., Thurian, P., Heitz, R., Hoffmann, A., Broser, I.

المصدر: Physical Review B ; volume 57, issue 16, page 9690-9694 ; ISSN 0163-1829 1095-3795

الاتاحة: http://dx.doi.org/10.1103/physrevb.57.9690
http://link.aps.org/article/10.1103/PhysRevB.57.9690
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.9690/fulltext

المؤلفون: Siegle, H., Kaschner, A., Hoffmann, A., Broser, I., Thomsen, C., Einfeldt, S., Hommel, D.

المصدر: Physical Review B ; volume 58, issue 20, page 13619-13626 ; ISSN 0163-1829 1095-3795

الاتاحة: http://dx.doi.org/10.1103/physrevb.58.13619
http://link.aps.org/article/10.1103/PhysRevB.58.13619
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.13619/fulltext

المؤلفون: Holst, J., Eckey, L., Hoffmann, A., Broser, I., Schöttker, B., As, D. J., Schikora, D., Lischka, K.

المصدر: Applied Physics Letters ; volume 72, issue 12, page 1439-1441 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.120588
https://pubs.aip.org/aip/apl/article-pdf/72/12/1439/18532958/1439_1_online.pdf

المؤلفون: Strassburg, M., Kutzer, V., Pohl, U. W., Hoffmann, A., Broser, I., Ledentsov, N. N., Bimberg, D., Rosenauer, A., Fischer, U., Gerthsen, D., Krestnikov, I. L., Maximov, M. V., Kop’ev, P. S., Alferov, Zh.I.

المصدر: Applied Physics Letters ; volume 72, issue 8, page 942-944 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.120880
https://pubs.aip.org/aip/apl/article-pdf/72/8/942/18532436/942_1_online.pdf