المؤلفون: Fonstad, Clifton J., Jr., Braun, Eric K., Shenoy, Krishna V., Mikkelson, J. M., Aggarwal, Rajni J., Ahadian, Joseph F., Petrich, Gale S., Kolodziejski, Leslie A., Grot, A. C., Psaltis, Demetri, Royter, Yakov, Wang, Hao, Martin, Paul S., Haus, Hermann A., Chen, Jerry C., Pan, Janet L., Peng, Lung-Han, Iisuka, Norio, Smet, Jurgen H., Hu, Qing, Prasad, Sheila, Hoshino, Isako

مصطلحات موضوعية: Heterostructures for High-Performance Devices, High-Temperature Stability of GaAs Integrated Circuits, High Peak-to-Valley Current Ratio Resonant-Tunneling Diodes on GaAs Substrates, Monolithic Integration of Resonant-Tunneling Diodes on GaAs Integrated Circuits, Phosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETS, Monolithic Integration of LEDs and VLSI GaAs MESFET Circuits, Development of an Epi-on-Electronics OEIC Technology, Integrated Optics Circuits Based on Commercial GaAs Integrated Circuits, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Reactive Ion Etching of InGaAIAs Heterostructures, Reactive Ion Etching of InGaAsP Heterostructures, Tunable Semiconductor Lasers, Application of the Spectral Index Method to Laser Diode Design, Normal Incidence Quantum Well Infrared Photodetector, Fourteen-Band k * p Analysis of Intersubband Transitions in Conduction Band Quantum Wells, Intersubband Transitions in Ultra-Narrow Quantum Wells, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, High-Frequency/High-Speed Characterization of Optoelectronic Devices, High-Frequency/High-Speed Characterization of Integrated Circuits, In-Situ Supersonic Beam Etching of III-V Heterostructures

وصف الملف: application/pdf

Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High-Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137; RLE_PR_137_01_01s_01; http://hdl.handle.net/1721.1/57295

الاتاحة: http://hdl.handle.net/1721.1/57295

المؤلفون: Fonstad, Clifton J., Jr., Choi, Woo-Young, Wong, Vincent V., Smith, Henry I., Meehan, Kathy, Gavrilovic, Paul, Whitney, P., Chen, Jerry C., Haus, Hermann A., Peng, Lung-Han, Smet, Jurgen H., Ippen, Erich P., Lenz, Gadi, Martin, Paul S., Shenoy, Krishna V., Goodhue, William D., Braun, Eric K., Mikkelson, J., Hansell, G., Harton, A., Wyatt, C., Ahadian, Joseph F., Kolodziejski, Leslie A., Grot, A. C., Psaltis, D., Nuytkens, P. R., Royter, Yakov, Aggarwal, Rajni J., Hirayama, Yuzo, Jones, R. Victor, Ehrenrich, Victor, Hu, Qing, Prasad, Sheila, Hoshino, Isako

مصطلحات موضوعية: Heterostructures for High Performance Devices, Growth Optimization of MBE-Grown InAIAs on InP, Fabrication of Ridge Waveguide Distributed Feedback Lasers by X-ray Lithography, Numerical Calculation of Coupling Coefficients in Ridge Waveguide Distributed Feedback Lasers, Measurement of Excited-state Lifetimes in Narrow Quantum Wells, Tunable Semiconductor Lasers, Integration of Vertically-emitting, In-plane Cavity Laser Diodes on GaAs VLSI Circuitry, Thermal Stability of GaAs MESFET VLSI Circuits, Gas Source MBE of InGaAsP Laser Diodes on GaAs Substrates, High-Density OEIC Neural Systems Produced by Monolithic Integration of GaAIAs Light Emitting Diodes on GaAs MESFET VLSI Circuits, Surface-Normal Optical Input Cells for High-Density, High-Speed GaAs MESFET-based OEICs, Surface-Normal Optical Output Cells for High-Density, Fiber-coupled GaAs MESFET-based OEICs, Low-temperature, Selective-area MBE Growth of GaAllInAs Laser Diodes on Semi-insulating GaAs Substrates, Selective-area MBE Growth of GaAllInAs Optical Waveguides on Semi-insulating GaAs Substrates, Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI, Polarization-resolved Infrared Spectra of Very Narrow AIAs/InGaAs/InP Quantum Wells, Symmetry Properties of Quantum Well Subband Energy Levels for Intersubband Transitions, Symmetry Properties of Quantum Well Subband Selection Rules for Intersubband Transitions, Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures, High-Frequency/High-Speed Characterization of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Analysis of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Modeling of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Characterization of Heterojunction Laser Diodes, High-Frequency/High-Speed Analysis of Heterojunction Laser Diodes, High-Frequency/High-Speed Modeling of Heterojunction Laser Diodes, High-Frequency/High-Speed Characterization of Heterojunction m-s-m Photodetectors

وصف الملف: application/pdf

Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136; RLE_PR_136_01_01s_01; http://hdl.handle.net/1721.1/57249

الاتاحة: http://hdl.handle.net/1721.1/57249