المؤلفون: Quanzhou Zhu, Biyi Jiang, Jun Lan, Zeyu Hou, Yida Dong, Zhongrui Wang, Xuewei Feng, Mei Shen, Hongyu Yu, Kai Chen, Jiamin Li, Longyang Lin, Feichi Zhou, Yida Li

المصدر: Advanced Electronic Materials, Vol 10, Iss 4, Pp n/a-n/a (2024)

مصطلحات موضوعية: hafnium oxide, resistive switching, memristor, SOM, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/451a1f57145e4263bf46c46f58c35e40

المؤلفون: Hengjie Zhang, Biyi Jiang, Chuantong Cheng, Beiju Huang, Huan Zhang, Run Chen, Jiayi Xu, Yulong Huang, Hongda Chen, Weihua Pei, Yang Chai, Feichi Zhou

المصدر: Nano Letters. 23:3107-3115

مصطلحات موضوعية: Mechanical Engineering, General Materials Science, Bioengineering, General Chemistry, Condensed Matter Physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3acae4e992b71d3c5f69bcad85abe914
https://doi.org/10.1021/acs.nanolett.2c03624

المؤلفون: Joschua Conrad, Biyi Jiang, Paul Kasser, Vasileios Belagiannis, Maurits Ortmanns

المصدر: 2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c24722a7551c9232849df4f85324c2cc
https://doi.org/10.1109/icecs53924.2021.9665503