المؤلفون: Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li, Wen-Hsi Lee

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 464-471 (2024)

مصطلحات موضوعية: Amorphous IGZO-TFT, positive bias temperature stress (PBTS), negative bias temperature stress (NBTS), IGZO-nano-sheet, electrical instabilities, hydrogen-impact, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10540482/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/45121ce7cfa14c329d6bc55bdf2925ff

المؤلفون: Muhammad Aslam, Shu-Wei Chang, Min-Hui Chuang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li

المصدر: IEEE Open Journal of Nanotechnology, Vol 5, Pp 9-16 (2024)

مصطلحات موضوعية: a-IGZO TFT, positive bias temperature stress (PBTS), negative bias temperature stress (NBTS), high-κ HfO $_2$, oxide semiconductor (OS), atomic layer deposition (ALD), Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10494359/; https://doaj.org/toc/2644-1292

URL الوصول: https://doaj.org/article/391eed6e6b14405ca2a88201290c828e

المؤلفون: Min Seong Kim (2847974), Hyung Tae Kim (8484903), Hyukjoon Yoo (8484900), Dong Hyun Choi (8484906), Jeong Woo Park (7258700), Tae Sang Kim (2031052), Jun Hyung Lim (2080450), Hyun Jae Kim (1577866)

مصطلحات موضوعية: Biochemistry, Cell Biology, Neuroscience, Physiology, Biotechnology, Cancer, Environmental Sciences not elsewhere classified, oxygen ions, Multifunctional Oxygen Scavenger Layer, a-IGZO front channel, threshold voltage shift, Amorphous IGZO TFTs, High-Performance Oxide Thin-Film Tr., bias temperature stress, PBTS, oxygen scavenger layer, OSL, radio-frequency magnetron cosputtering, 2.31 V, Low-Temperature Processing, vs, bilayer channel, a-IGZO TFT

Relation: https://figshare.com/articles/journal_contribution/Multifunctional_Oxygen_Scavenger_Layer_for_High-Performance_Oxide_Thin-Film_Transistors_with_Low-Temperature_Processing/14866399

الاتاحة: https://doi.org/10.1021/acsami.1c05565.s001

المساهمون: Krasula, S

المصدر: Other Information: PBD: 1 Jul 2002; Other Information: Work performed by Cornell University, Ithaca, New York

وصف الملف: Medium: ED; Size: 52 pages

URL الوصول: http://www.osti.gov/scitech/servlets/purl/15000747

المؤلفون: Wang, Sisi, Wong, Man

مصطلحات موضوعية: Annealing, Fluorination, Indium-gallium-zinc oxide, Positive bias temperature stress, Reliability, Thin-film transistors

Relation: http://repository.ust.hk/ir/Record/1783.1-113981; Digest of Technical Papers - SID International Symposium, v. 52, (S2), 26 August 2021, p. 403-406; https://doi.org/10.1002/sdtp.15138; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(S2)&rft.date=2021&rft.spage=403&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Reliability+enhancement+of+an+indium-gallium-zinc+oxide+thin-film+transistor+by+pre-fluorination+non-oxidizing+annealing&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium; http://www.scopus.com/record/display.url?eid=2-s2.0-85115875711&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-113981
https://doi.org/10.1002/sdtp.15138
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(S2)&rft.date=2021&rft.spage=403&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Reliability+enhancement+of+an+indium-gallium-zinc+oxide+thin-film+transistor+by+pre-fluorination+non-oxidizing+annealing&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium
http://www.scopus.com/record/display.url?eid=2-s2.0-85115875711&origin=inward

المؤلفون: Wang, Sisi, Lu, Lei, Lv, Nannan, Wong, Man

مصطلحات موضوعية: Annealing, Fluorination, Indium-gallium-zinc oxide, Positive bias temperature stress, Reliability, Thin-film transistors

Relation: http://repository.ust.hk/ir/Record/1783.1-113627; Digest of Technical Papers - SID International Symposium, v. 52, (1), June 2021, p. 1120-1123; https://doi.org/10.1002/sdtp.14890; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(1)&rft.date=2021&rft.spage=1120&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Non-oxidizing+pre-annealing+for+enhanced+fluorination+of+an+indiumgallium-zinc+oxide+thin-film+transistor&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium; http://www.scopus.com/record/display.url?eid=2-s2.0-85113862291&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-113627
https://doi.org/10.1002/sdtp.14890
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(1)&rft.date=2021&rft.spage=1120&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Non-oxidizing+pre-annealing+for+enhanced+fluorination+of+an+indiumgallium-zinc+oxide+thin-film+transistor&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium
http://www.scopus.com/record/display.url?eid=2-s2.0-85113862291&origin=inward

المؤلفون: Jongwoo Park, Taeyoung Khim, Hyo-Jung Kim, Sora Bak, Jang-Kun Song, Byoungdeog Choi

المصدر: Scientific Reports
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)

مصطلحات موضوعية: Multidisciplinary, Materials science, business.industry, Science, Threshold voltage instability, Electronics, photonics and device physics, Substrate (electronics), Article, Electrical and electronic engineering, law.invention, Techniques and instrumentation, Stress (mechanics), Capacitor, Nanoscale devices, law, Flexible display, Nanoscience and technology, Optoelectronics, Medicine, business, Bias temperature stress, Polyimide

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4f39fd45ff8dc30f3d14f4ac65865ba
http://europepmc.org/articles/PMC8052436

المؤلفون: Gerhard Rzepa, B. Kaczer, Barry O'Sullivan, Bernhard Stampfer, Tibor Grasser, Michael Waltl

المصدر: IRPS

مصطلحات موضوعية: 010302 applied physics, Materials science, Hydrogen, Condensed matter physics, Oxide, chemistry.chemical_element, Release model, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Stress (mechanics), chemistry.chemical_compound, chemistry, Temperature instability, 0103 physical sciences, Degradation (geology), 0210 nano-technology, Bias temperature stress, Hot-carrier injection

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::669462919c6f9b7265cb05adfb87515e
https://doi.org/10.1109/irps45951.2020.9129198

المؤلفون: Ronald Green, Mooro El, Aivars J. Lelis, Daniel B. Habersat

المصدر: Materials Science Forum. 858:833-839

مصطلحات موضوعية: 010302 applied physics, Materials science, Mechanical Engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Power law, Rate of increase, Threshold voltage, Stress (mechanics), Mechanics of Materials, 0103 physical sciences, MOSFET, Electronic engineering, General Materials Science, 0210 nano-technology, Bias temperature stress, Lead (electronics), Simulation

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::01990d3ecf70099e7e0d050f57e34e8f
https://doi.org/10.4028/www.scientific.net/msf.858.833

المؤلفون: Abu Bakar Siddik, Suhui Lee, Young Joo Cho, Jae-Seob Lee, Yongsu Lee, Jin Jang, Md. Masum Billah, Jiyeong Shin, Dongjin Kim

المصدر: Advanced Engineering Materials. 23:2000901

مصطلحات موضوعية: Materials science, business.industry, Thin-film transistor, Optoelectronics, General Materials Science, Condensed Matter Physics, business, Bias temperature stress, Durability, Excimer laser annealing, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4103e757cf88d39c49dbf3e547a2cfbb
https://doi.org/10.1002/adem.202000901

المؤلفون: Ohyun Kim, GwangTae Kim, Hoon Jeong, Tae-Kyoung Ha, JeongKi Park, Yongjo Kim, SangHee Yu

المصدر: Solid-State Electronics. 172:107875

مصطلحات موضوعية: 010302 applied physics, Materials science, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Electron, Trapping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Oxygen, Electronic, Optical and Magnetic Materials, Amorphous solid, chemistry, Thin-film transistor, Ionization, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, 0210 nano-technology, Bias temperature stress, Saturation (magnetic)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::be3821fdb34bc77ef60354d0ea5e26c1
https://doi.org/10.1016/j.sse.2020.107875

المؤلفون: Kyu-Jeong Choi, Woong-Chul Shin, So-Jung Yoon, Sung-Min Yoon, Nak-Jin Seong

المصدر: RSC advances. 8(44)

مصطلحات موضوعية: 010302 applied physics, Materials science, General Chemical Engineering, Transistor, Oxide, Analytical chemistry, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, chemistry.chemical_compound, Atomic layer deposition, chemistry, Thin-film transistor, law, 0103 physical sciences, Positive bias, 0210 nano-technology, Bias temperature stress, Saturation (magnetic), Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9ef00070526ff181da0efe3f644e011
https://pubmed.ncbi.nlm.nih.gov/35542140

المؤلفون: Aivars J. Lelis, Daniel B. Habersat, Mooro El, Ronald Green

المصدر: Materials Science Forum. :677-680

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Electrical engineering, Negative bias, Condensed Matter Physics, Degree (temperature), Threshold voltage, Stress (mechanics), Acceleration, Mechanics of Materials, Optoelectronics, General Materials Science, Stress conditions, Power MOSFET, Bias temperature stress, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9680699fdca5438c31d2118ba231c9e4
https://doi.org/10.4028/www.scientific.net/msf.821-823.677

المؤلفون: Zhipeng Yin, Zhenghao Gu, Dejun Wang, Fuwen Qin, Chao Yang

المصدر: Journal of Physics D: Applied Physics. 52:405103

مصطلحات موضوعية: Mos capacitor, Materials science, Acoustics and Ultrasonics, business.industry, Condensed Matter Physics, Instability, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Ion, Capacitor, law, Optoelectronics, Flat band, business, Bias temperature stress

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f32f723e37155ecec1897e2eda2404ca
https://doi.org/10.1088/1361-6463/ab2faf

المؤلفون: Yasunori Tanaka, Shinsuke Harada, Kazutoshi Kojima, Takahito Kojima, Keiko Ariyoshi, Hajime Okumura, Atsushi Shimozato, Junji Senzaki

المصدر: Materials Science Forum. :521-524

مصطلحات موضوعية: Materials science, business.industry, Reverse short-channel effect, Annealing (metallurgy), Mechanical Engineering, Threshold voltage instability, Condensed Matter Physics, Instability, Threshold voltage, Mechanics of Materials, Gate oxide, MOSFET, Electronic engineering, Optoelectronics, General Materials Science, Bias temperature stress, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8c9e12686ef526b57fe360d6cc9d9fa2
https://doi.org/10.4028/www.scientific.net/msf.778-780.521

المؤلفون: Aaron Modic, Philip Mawby, Tamara Isaacs-Smith, Stpehen M. Thomas, Leonard C. Feldman, Yogesh K. Sharma, Ayayi C. Ahyi, Michael R. Jennings, Yi Xu, Sarit Dhar, Craig A. Fisher, John R. Williams, Eric Granfukel

المصدر: Materials Science Forum. :513-516

مصطلحات موضوعية: Materials science, Passivation, business.industry, Mechanical Engineering, Diffusion, Analytical chemistry, Field effect, Condensed Matter Physics, Planar, Mechanics of Materials, Polar material, MOSFET, Optoelectronics, General Materials Science, business, Bias temperature stress, Phosphosilicate glass

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c53925bd0e9ca3092e77a8627bc21684
https://doi.org/10.4028/www.scientific.net/msf.778-780.513

المؤلفون: Sujit Banerjee, Kevin Matocha, Kiran Chatty, Larry B. Rowland

المصدر: Materials Science Forum. :903-906

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Electrical engineering, Condensed Matter Physics, Die (integrated circuit), Threshold voltage, Reliability (semiconductor), Mechanics of Materials, Optoelectronics, General Materials Science, Power MOSFET, Bias temperature stress, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::39017fb32d49f6d36cacfc95fc0b72c7
https://doi.org/10.4028/www.scientific.net/msf.778-780.903

المؤلفون: Tae Geun Kim, Ho Myoung An, Seok Man Hong, Hee-Dong Kim, Min Ju Yun

المصدر: physica status solidi (RRL) - Rapid Research Letters. 7:497-500

مصطلحات موضوعية: Hydrogen annealing, Chemistry, Analytical chemistry, Nanotechnology, Condensed Matter Physics, Temperature stress, Resistive random-access memory, law.invention, Capacitor, Reliability (semiconductor), Temperature instability, law, General Materials Science, Bias temperature stress, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b9e8afc4e6ae18cf917f07f75de1e90a
https://doi.org/10.1002/pssr.201307192

المؤلفون: Xin Ju, Xiang Xiao, Yuxiang Xiao, Shengdong Zhang

المصدر: 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).

مصطلحات موضوعية: 010302 applied physics, Work (thermodynamics), Materials science, Condensed matter physics, business.industry, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, Threshold voltage, Exponential function, Amorphous solid, Stress (mechanics), Logic gate, 0103 physical sciences, 0210 nano-technology, Bias temperature stress, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e65169a57b6c109d0e6044ccd6fad6a3
https://doi.org/10.1109/am-fpd.2016.7543647

المؤلفون: Yoo‐yong Jin, Kyoung-Moon Lim, Hoonki Kim, Euitae Kim, Mi‐ra Yun, Seok Joo Kim, Tae-Young Heo, Woo-Nam Jeong, Han‐chul Park, Kwang Jo Hwang, Yong-Kee Hwang

المصدر: SID Symposium Digest of Technical Papers. 43:1082-1085

مصطلحات موضوعية: Reliability (semiconductor), Materials science, Pixel, Thermal instability, Thin-film transistor, Electronic engineering, Aperture ratio, Dual gate, Bias temperature stress, Luminance

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::486fb9ed4e94cde54ecc8d4ee74526ae
https://doi.org/10.1002/j.2168-0159.2012.tb05979.x