المؤلفون: Persson, Stefan, Fjer, M, Escobedo-Cousin, E, Olsen, S H, Malm, BG, Wang, YB, Hellström, PE, Ostling, M, O´Neill, AG

المصدر: IEEE Transactions on Electron Devices. 57(6):1243-1252

مصطلحات موضوعية: Band-gap engineering, BiCOMS integration, stained-Si heterojunction bipolar transistor (HBT), TECHNOLOGY, Electrical engineering, electronics and photonics, TEKNIKVETENSKAP, Elektroteknik, elektronik och fotonik

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-11628