المؤلفون: Gennser, U., Scheinert, M., Diehl, L., Tsujino, S., Borak, A., Falub, C. V., Grützmacher, D., Weber, A., Maude, D. K., Campidelli, Y., Kermarrec, O., Bensahel, D.

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/cond-mat/0501212

المؤلفون: Li, X., Checoury, X., El Kurdi, M., David, S., Boucaud, P., Kermarrec, O., Campidelli, Y., Bensahel, D.

Relation: https://doi.org/10.1109/group4.2005.1516395; oai:zenodo.org:1269110

الاتاحة: https://doi.org/10.1109/group4.2005.1516395

المؤلفون: Niebojewski, Heimanu, Le Royer, Cyrille, Morand, Y., Rozeau, Olivier, Jaud, Marie-Anne, Dubois, Emmanuel, Poiroux, Thierry, Bensahel, D.

المساهمون: STMicroelectronics Crolles (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

المصدر: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.science/hal-01000014 ; Solid-State Electronics, 2014, 97, pp.45-51. ⟨10.1016/j.sse.2014.04.028⟩.

مصطلحات موضوعية: self-aligned contacts, FDSOI, parasitic capacitance, delay, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-01000014
https://hal.science/hal-01000014v1/document
https://hal.science/hal-01000014v1/file/2014-Niebojewski-SSE-Ultra-Low-Capacitance-hal.pdf
https://doi.org/10.1016/j.sse.2014.04.028

المؤلفون: Bastard, A., Bastien, J. C., Hyot, B., Lhostis, S., Mompiou, F., Bonafos, C., Servanton, G., Borowiak, C., Lorut, F., Bicais-Lepinay, N., Toffoli, A., Sandhya, C., Fantini, A., Perniola, L., Gourvest, E., Maitrejean, S., Roule, A., Sousa, V., Bensahel, D., André, B.

المصدر: Applied Physics Letters ; volume 99, issue 24, page 243103 ; ISSN 0003-6951 1077-3118

الاتاحة: https://doi.org/10.1063/1.3668095
http://aip.scitation.org/doi/pdf/10.1063/1.3668095

المؤلفون: Chriqui, Y., Sagnes, I., Bensahel, D., Bouchoule, S., Saint Girons, G., Isella, G., Kermarrec, O., Von Kaenel, H., Ieee

Relation: https://doi.org/10.1109/group4.2005.1516454; oai:zenodo.org:1269213

الاتاحة: https://doi.org/10.1109/group4.2005.1516454

المؤلفون: Regolini, J., Trincat, F., Berbezier, Isabelle, Palleau, J., Mercier, J., Bensahel, D.

المصدر: ISSN: 1155-4320.

مصطلحات موضوعية: [PHYS.HIST]Physics [physics]/Physics archives

Relation: jpa-00248816; https://hal.science/jpa-00248816; https://hal.science/jpa-00248816/document; https://hal.science/jpa-00248816/file/ajp-jp3v2p1445.pdf

الاتاحة: https://hal.science/jpa-00248816
https://hal.science/jpa-00248816/document
https://hal.science/jpa-00248816/file/ajp-jp3v2p1445.pdf
https://doi.org/10.1051/jp3:1992189

المؤلفون: Regolini, J. L., Bensahel, D., Mercier, J.

المصدر: Journal of Electronic Materials ; volume 19, issue 10, page 1075-1081 ; ISSN 0361-5235 1543-186X

الاتاحة: https://doi.org/10.1007/bf02651984
https://link.springer.com/content/pdf/10.1007/BF02651984.pdf
https://link.springer.com/article/10.1007/BF02651984/fulltext.html
http://link.springer.com/content/pdf/10.1007/BF02651984

المؤلفون: Badoz, P. A., Bensahel, D., Guérin, L., Perret, P., Puissant, C., Regolini, J. L.

المصدر: Journal of Electronic Materials ; volume 19, issue 10, page 1123-1127 ; ISSN 0361-5235 1543-186X

الاتاحة: https://doi.org/10.1007/bf02651992
https://link.springer.com/content/pdf/10.1007/BF02651992.pdf
https://link.springer.com/article/10.1007/BF02651992/fulltext.html
http://link.springer.com/content/pdf/10.1007/BF02651992

المؤلفون: Li, X., Boucaud, P., Checoury, X., Kermarrec, O., Campidelli, Y., Bensahel, D.

المصدر: Journal of Applied Physics; 1/15/2006, Vol. 99 Issue 2, p023103, 5p, 1 Color Photograph, 1 Black and White Photograph, 6 Graphs

مصطلحات موضوعية: CRYSTALS, PHOTONICS, PHOTOLUMINESCENCE, TEMPERATURE, SPECTRUM analysis, PHYSICS

المؤلفون: El kurdi, M., Boucaud, P., Sauvage, S., Aniel, F., Fishman, G., Kermarrec, O., Campidelli, Y., Bensahel, D., Saint-Girons, G., Sagnes, I., Patriarche, G.

المصدر: Journal of Applied Physics; 4/15/2005, Vol. 97 Issue 8, p083525, 7p, 2 Diagrams, 1 Chart, 7 Graphs

مصطلحات موضوعية: SPECTRUM analysis, GERMANIUM, SILICON, NONMETALS, ELECTRICAL engineering, PHYSICS

المؤلفون: Kermarrec, O., Campidelli, Y., Bensahel, D.

المصدر: Journal of Applied Physics; 12/1/2004, Vol. 96 Issue 11, p6175-6182, 8p, 7 Black and White Photographs, 1 Diagram, 6 Graphs

مصطلحات موضوعية: SEMICONDUCTORS, CHEMICAL vapor deposition, EPITAXY, CRYSTAL growth, SILICON, OPTOELECTRONICS

المؤلفون: El kurdi, M., Boucaud, P., Sauvage, S., Fishman, G., Kermarrec, O., Campidelli, Y., Bensahel, D., Saint-Girons, G., Sagnes, I., Patriarche, G.

المصدر: Journal of Applied Physics; 8/15/2002, Vol. 92 Issue 4, p1858, 4p, 1 Black and White Photograph, 3 Graphs

مصطلحات موضوعية: SILICON, PHOTONICS

المؤلفون: Aubry-Fortuna, V., Chaix-Pluchery, O., Fortuna, F., Hernandez, C., Campidelli, Y., Bensahel, D.

المصدر: Journal of Applied Physics; 4/15/2002, Vol. 91 Issue 8, p5468, 6p, 2 Black and White Photographs, 7 Graphs

مصطلحات موضوعية: SILICIDES, ZIRCONIUM, TITANIUM

المؤلفون: Myrberg, Tobias, 1975, Jacob, AP, Nur, O., Friesel, M, Willander, M, Patel, CJ, Campidelli, Y, Hernandez, C, Kermarrec, O, Bensahel, D

المصدر: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 15(7):411-417

مصطلحات موضوعية: Other Engineering and Technologies, Annan teknik, Electrical Engineering, Electronic Engineering, Information Engineering, Elektroteknik och elektronik, Materials Engineering, Materialteknik, Condensed Matter Physics, Den kondenserade materiens fysik, 2-dimensional electron gases, x-ray-diffraction, growth, strain, silicon, heterostructures, mobility, relaxation, surfactant, substrate

URL الوصول: https://gup.ub.gu.se/publication/124361

المؤلفون: Dutartre, D., Haond, M., Bensahel, D.

المصدر: Journal of Applied Physics; 1/15/1986, Vol. 59 Issue 2, p632, 4p, 1 Black and White Photograph, 2 Diagrams, 1 Graph

مصطلحات موضوعية: RECRYSTALLIZATION (Metallurgy), THIN films, SEMICONDUCTOR wafers

المؤلفون: Haond, M., Vu, D. P., Bensahel, D., Dupuy, M.

المصدر: Journal of Applied Physics; Jul1983, Vol. 54 Issue 7, p3892-3896, 5p

المؤلفون: Bensahel, D., Auvert, G., Perio, A., Pfister, J. C., Izrael, A., Henoc, P.

المصدر: Journal of Applied Physics; Jun1983, Vol. 54 Issue 6, p3485-3488, 4p

المؤلفون: Betti Beneventi, G., Gourvest, E., Fantini, A., Perniola, L., Sousa, V., Maitrejean, S., Bastien, J.C., Bastard, A., Fargeix, A., Hyot, B., Jahan, C., Nodin, J.F., Persico, A., Blachier, D., Toffoli, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P., Bensahel, D., Mazoyer, P., Annunziata, R., Boulanger, F.

المصدر: 2010 IEEE International Memory Workshop ; page 1-4

الاتاحة: http://dx.doi.org/10.1109/imw.2010.5488328
http://xplorestaging.ieee.org/ielx5/5482536/5488307/05488328.pdf?arnumber=5488328

المؤلفون: Betti Beneventi, G., Perniola, L., Fantini, A., Blachier, D., Toffoli, A., Gourvest, E., Maitrejean, S., Sousa, V., Jahan, C., Nodin, J.F., Persico, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P., Bensahel, D., Mazoyer, P., Annunziata, R., Boulanger, F.

المصدر: 2010 Proceedings of the European Solid State Device Research Conference ; page 313-316

الاتاحة: http://dx.doi.org/10.1109/essderc.2010.5618230
http://xplorestaging.ieee.org/ielx5/5609035/5617713/05618230.pdf?arnumber=5618230

المؤلفون: Fantini, A., Sousa, V., Perniola, L., Gourvest, E., Bastien, J.C., Maitrejean, S., Braga, S., Pashkov, N., Bastard, A., Hyot, B., Roule, A., Persico, A., Feldis, H., Jahan, C., Nodin, J.F., Blachier, D., Toffoli, A., Reimbold, G., Fillot, F., Pierre, F., Annunziata, R., Bensahel, D., Mazoyer, P., Vallee, C., Billon, T., Hazart, J., de Salvo, B., Boulanger, F.

المساهمون: Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics Crolles (ST-CROLLES)

المصدر: Proc. 2010 IEEE International Electron Devices Meeting (IEDM) ; https://hal.science/hal-00625213 ; Proc. 2010 IEEE International Electron Devices Meeting (IEDM), 2010, San Francisco, United States

جغرافية الموضوع: San Francisco, United States

الاتاحة: https://hal.science/hal-00625213