المؤلفون: Hellinger, Carsten, Rommel, Mathias, Bauer, Anton J.

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 359 Issue: 1 p113-118, 6p

المؤلفون: Hellinger, Carsten, Rommel, Mathias, Bauer, Anton J.

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 359 Issue: 1 p105-112, 8p

المؤلفون: DI BENEDETTO, LUIGI, LICCIARDO, GIAN DOMENICO, Erlbacher, Tobias, Bauer, Anton J., BELLONE, Salvatore

المساهمون: DI BENEDETTO, Luigi, Licciardo, GIAN DOMENICO, Erlbacher, Tobia, Bauer, Anton J., Bellone, Salvatore

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000378592800038; volume:63; firstpage:2474; lastpage:2481; numberofpages:8; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11386/4665408; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84988411245; http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7452583&searchWithin=%22Authors%22:.QT.Luigi%20Di%20Benedetto.QT.&searchWithin=erlbacher&newsearch=true

الاتاحة: http://hdl.handle.net/11386/4665408
https://doi.org/10.1109/TED.2016.2549599
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7452583&searchWithin=%22Authors%22:.QT.Luigi%20Di%20Benedetto.QT.&searchWithin=erlbacher&newsearch=true

المؤلفون: Ortiz, Guillermo, Strenger, Christian, Uhnevionak, Viktoriya, Burenkov, A, Bauer, Anton, J, Pichler, Peter, Cristiano, Fuccio, Bedel-Pereira, Eléna, Mortet, Vincent

المساهمون: Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), Czech Academy of Sciences Prague (CAS)

المصدر: ISSN: 0003-6951.

مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-01659149; https://laas.hal.science/hal-01659149; https://laas.hal.science/hal-01659149/document; https://laas.hal.science/hal-01659149/file/2015_APL_Ortiz_SiC.pdf

الاتاحة: https://laas.hal.science/hal-01659149
https://laas.hal.science/hal-01659149/document
https://laas.hal.science/hal-01659149/file/2015_APL_Ortiz_SiC.pdf
https://doi.org/10.1063/1.4908123

المؤلفون: Murakami, Katsuhisa, Rommel, Mathias, Hudec, Boris, Rosová, Alica, Hušeková, Kristína, Dobročka, Edmund, Rammula, Raul, Kasikov, Aarne, Han, Jeong Hwan, Lee, Woongkyu, Song, Seul Ji, Paskaleva, Albena, Bauer, Anton J., Frey, Lothar, Fröhlich, Karol, Aarik, Jaan, Hwang, Cheol Seong

المصدر: ACS Applied Materials & Interfaces ; volume 6, issue 4, page 2486-2492 ; ISSN 1944-8244 1944-8252

الاتاحة: http://dx.doi.org/10.1021/am4049139
https://pubs.acs.org/doi/pdf/10.1021/am4049139

المؤلفون: Rumler, Maximilian, Rommel, Mathias, Erlekampf, Jürgen, Azizi, Maral, Geiger, Tobias, Bauer, Anton J., Meißner, Elke, Frey, Lothar

مصطلحات موضوعية: ddc:600

وصف الملف: application/pdf

Relation: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2652; urn:nbn:de:bvb:29-opus-38398; https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-38398; https://opus4.kobv.de/opus4-fau/files/2652/rumler_characterization_3839.pdf

الاتاحة: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2652
https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-38398
https://opus4.kobv.de/opus4-fau/files/2652/rumler_characterization_3839.pdf

المؤلفون: Murakami, Katsuhisa, Rommel, Mathias, Yanev, Vasil, Bauer, Anton J., Frey, Lothar

مصطلحات موضوعية: ddc:600

وصف الملف: application/pdf

Relation: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2621; urn:nbn:de:bvb:29-opus-38057; https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-38057; https://opus4.kobv.de/opus4-fau/files/2621/murakami_current_3805.pdf

الاتاحة: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2621
https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-38057
https://opus4.kobv.de/opus4-fau/files/2621/murakami_current_3805.pdf

المؤلفون: Murakami, Katsuhisa, Rommel, Mathias, Yanev, Vasil, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

مصطلحات موضوعية: ddc:600

وصف الملف: application/pdf

Relation: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2610; urn:nbn:de:bvb:29-opus-37944; https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-37944; https://opus4.kobv.de/opus4-fau/files/2610/murakami_highly_3794.pdf

الاتاحة: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/2610
https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-37944
https://opus4.kobv.de/opus4-fau/files/2610/murakami_highly_3794.pdf

المؤلفون: DI BENEDETTO, LUIGI, LICCIARDO, GIAN DOMENICO, RUBINO, Alfredo, Erlbacher, Tobias, Bauer, Anton J.

المساهمون: Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis, DI BENEDETTO, Luigi, Licciardo, GIAN DOMENICO, Erlbacher, Tobia, Bauer, Anton J., Rubino, Alfredo

مصطلحات موضوعية: Design Methodology, Power Device, Power MOSFET, Semiconductor Device Modeling

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-303571043-4; ispartofbook:Silicon Carbide and Related Materials 2016; European Conference Silicon Carbide and Related Materials 2016; volume:897; firstpage:529; lastpage:532; numberofpages:4; http://hdl.handle.net/11386/4684175; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85020013895; https://www.scientific.net/MSF.897.529

الاتاحة: http://hdl.handle.net/11386/4684175
https://doi.org/10.4028/www.scientific.net/MSF.897.529
https://www.scientific.net/MSF.897.529

المؤلفون: Matthus, Christian D., Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

المصدر: 2018 22nd International Conference on Ion Implantation Technology (IIT)

الاتاحة: http://dx.doi.org/10.1109/iit.2018.8807950
http://xplorestaging.ieee.org/ielx7/8794648/8807892/08807950.pdf?arnumber=8807950

المؤلفون: Kocher, Matthias, Rommel, Mathias, Sledziewski, Tomasz, Haublein, Volker, Bauer, Anton J.

المصدر: 2018 22nd International Conference on Ion Implantation Technology (IIT)

الاتاحة: http://dx.doi.org/10.1109/iit.2018.8807904
http://xplorestaging.ieee.org/ielx7/8794648/8807892/08807904.pdf?arnumber=8807904

المؤلفون: Kim, Seongjun, Kim, Hong-Ki, Lim, Minwho, Jeong, Seonghoon, Kang, Min-Jae, Kang, Min-Sik, Lee, Nam-Suk, Coung, Tran Viet, Kim, Hyunsoo, Erlbacher, Tobias, Bauer, Anton J., Shin, Hoon-Kyu

Time: 670, 530, 620

Relation: Journal of nanomaterials. Online journal; https://publica.fraunhofer.de/handle/publica/260652

الاتاحة: https://publica.fraunhofer.de/handle/publica/260652
https://doi.org/10.1155/2019/5231983

المؤلفون: Matthus, Christian D., Di Benedetto, Luigi, Kocher, Matthias, Bauer, Anton J., Licciardo, Gian Domenico, Rubino, Alfredo, Erlbacher, Tobias

المساهمون: Seventh Framework Programme, MSP

المصدر: IEEE Sensors Journal ; volume 19, issue 8, page 2871-2878 ; ISSN 1530-437X 1558-1748 2379-9153

الاتاحة: http://dx.doi.org/10.1109/jsen.2019.2891293
http://xplorestaging.ieee.org/ielx7/7361/8668589/08604048.pdf?arnumber=8604048

المؤلفون: Matthus, Christian D., Bauer, Anton J., Frey, Lothar, Erlbacher, Tobias

المصدر: Materials Science in Semiconductor Processing ; volume 90, page 205-211 ; ISSN 1369-8001

الاتاحة: http://dx.doi.org/10.1016/j.mssp.2018.10.019
https://api.elsevier.com/content/article/PII:S1369800118317050?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S1369800118317050?httpAccept=text/plain

المؤلفون: Kocher, Matthias, Schlichting, Holger, Kallinger, Birgit, Rommel, Mathias, Bauer, Anton J., Erlbacher, Tobias

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c37ab2201fdfe3c3ffc45daf1b8fa906

المؤلفون: Matthus, Christian D., Huerner, Andreas, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

المصدر: Solid-State Electronics ; volume 144, page 101-105 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2018.03.010
https://api.elsevier.com/content/article/PII:S0038110117309073?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110117309073?httpAccept=text/plain

المؤلفون: DI BENEDETTO, LUIGI, LICCIARDO, GIAN DOMENICO, LIGUORI, ROSALBA, RUBINO, Alfredo, Erlbacher, Tobias, Bauer, Anton J.

المساهمون: DI BENEDETTO, Luigi, Licciardo, GIAN DOMENICO, Erlbacher, Tobia, Bauer, Anton J., Liguori, Rosalba, Rubino, Alfredo

مصطلحات موضوعية: 4H-polytype silicon carbide (4H-SiC) double-implanted MOSFET(DMOSFET), power device, semiconductor device modeling, silicon compound, Electronic, Optical and Magnetic Material, Electrical and Electronic Engineering

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000384574400063; volume:63; firstpage:3795; lastpage:3799; numberofpages:5; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11386/4674255; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84979073129; http://ieeexplore.ieee.org/document/7508453/?section=abstract; http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7508453

الاتاحة: http://hdl.handle.net/11386/4674255
https://doi.org/10.1109/TED.2016.2584218
http://ieeexplore.ieee.org/document/7508453/?section=abstract
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7508453

المؤلفون: Matthus, Christian D., Erlbacher, Tobias, Burenkov, Alexander, Bauer, Anton J., Frey, Lothar

مصطلحات موضوعية: 4H-SiC, ion implantation, PIN-Diode, spectral response, UV, UV detection, characterization, diodes, semiconductor diodes, spectrum analysis, radiation detection, solar UV radiation, UV illuminations, geo, envir

Relation: https://publica.fraunhofer.de/handle/publica/394502

الاتاحة: https://publica.fraunhofer.de/handle/publica/394502

المؤلفون: Murakami, Katsuhisa, Rommel, Mathias, Yanev, Vasil, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

المصدر: Journal of Applied Physics; Sep2011, Vol. 110 Issue 5, p054104, 6p

مصطلحات موضوعية: DIELECTRICS, DIELECTRIC devices, COMPLEMENTARY metal oxide semiconductors, POLYCRYSTALLINE semiconductors, SEMICONDUCTORS

المؤلفون: Paskaleva, Albena, Lemberger, Martin, Bauer, Anton J., Weinreich, Wenke, Heitmann, Johannes, Erben, Elke, Schröder, Uwe, Oberbeck, Lars

المصدر: Journal of Applied Physics; Sep2009, Vol. 106 Issue 5, p054107-054113, 6p, 5 Graphs

مصطلحات موضوعية: AMORPHOUS substances, DIELECTRICS, CRYSTALLIZATION, CRYSTAL grain boundaries, DIELECTRIC relaxation, OZONE, ELECTRODES