المؤلفون: Barthelmess, R.

الاتاحة: http://data.europeana.eu/aggregation/europeana/358/item_AAMZDBBIUGB5EHQ3BO3LIU2W6ITR7HZD

المؤلفون: Niedernostheide, F.-J., Schulze, H.-J., Kellner-Werdehausen, U., Barthelmess, R., Przybilla, J., Keller, R., Schoof, H., Pikorz, D.

المصدر: ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ; page 122-125

الاتاحة: http://dx.doi.org/10.1109/ispsd.2003.1225245
http://xplorestaging.ieee.org/ielx5/8680/27504/01225245.pdf?arnumber=1225245

المؤلفون: Barthelmess, R., Beuermann, M., Metzner, D., Schmidt, G., Westerholt, D., Winter, N., Gerstenmaier, Y.C., Reznik, D., Ruff, M., Schulze, H.-J., Willmeroth, A.

المصدر: Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)

الاتاحة: http://dx.doi.org/10.1109/ispsd.1998.702664
http://xplorestaging.ieee.org/ielx4/5675/15198/00702664.pdf?arnumber=702664

المؤلفون: Zmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R.

المساهمون: PHYSICS, ELECTRICAL & COMPUTER ENGINEERING

المصدر: Scopus

Relation: Zmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R. (2001-09). Analysis of high-power devices using proton beam induced charge microscopy. Microelectronics Reliability 41 (9-10) : 1519-1524. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2714(01)00159-7; http://scholarbank.nus.edu.sg/handle/10635/55082; 000171384900042

الاتاحة: http://scholarbank.nus.edu.sg/handle/10635/55082

المؤلفون: Barthelmess, R.

Relation: http://mdz-nbn-resolving.de/urn:nbn:de:bvb:12-bsb10446348-7

الاتاحة: http://mdz-nbn-resolving.de/urn:nbn:de:bvb:12-bsb10446348-7

المؤلفون: Przybilla, J., Dorn, J., Barthelmess, R., Kellner-Werdehausen, U., Schulze, H.-J., Niedernostheide, F.-J.

المصدر: 2009 13th European Conference on Power Electronics & Applications; 2009, p1-10, 10p

المؤلفون: Niedernostheide, F.-J., Schulze, H.-J., Kellner-Werdehausen, U., Barthelmess, R., Przybilla, J., Keller, R., Schoof, H., Pikorz, D.

المصدر: ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003; 2003, p122-125, 4p

المؤلفون: Barthelmess, R., Beuermann, M., Metzner, D., Schmidt, G., Westerholt, D., Winter, N., Gerstenmaier, Y.C., Reznik, D., Ruff, M., Schulze, H.-J., Willmeroth, A.

المصدر: Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD'98 (IEEE Cat No98CH36212); 1998, p181-184, 4p

المؤلفون: BARTHELMESS, R.

المصدر: Voice of Masonry & Tidings From the Craft; Mar 1860, Vol. 2 Issue 5, p37-37, 1/5p