المؤلفون: Ghosh, Sudipta, Venkateswaran, P., Sarkar, Subir Kumar

المصدر: Circuit World, 2021, Vol. 50, Issue 2/3, pp. 195-204.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/CW-08-2020-0175

المؤلفون: Jyi-Tsong Lin, Chia-Yo Kuo

المصدر: Discover Nano, Vol 19, Iss 1, Pp 1-16 (2024)

مصطلحات موضوعية: Nanosheet induced tunnel field-effect transistor (NS iTFET), Subthreshold swing (SS), Line tunneling, Band-to-band tunneling (BTBT), SiGe, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/ca4285b817004358a4840b5846b41cd2

المؤلفون: Zahra Ahangari

المصدر: Iranian Journal of Electrical and Electronic Engineering, Vol 20, Iss 2, Pp 11-19 (2024)

مصطلحات موضوعية: band to band tunneling. gate workfunction, heterojnction, line tunneling, tunnel field effect transistor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://ijeee.iust.ac.ir/article-1-2955-en.pdf; https://doaj.org/toc/1735-2827; https://doaj.org/toc/2383-3890

URL الوصول: https://doaj.org/article/eacf52f5fcc54313864e48492aec76b7

المؤلفون: Pranita Soni, Aditya Jain, Kaushal Kumar, Lokesh Kumar Soni, Ajay Kumar, Neha Gupta, Amit Kumar Goyal, Rakesh Saroha

المصدر: Results in Engineering, Vol 25, Iss , Pp 104069- (2025)

مصطلحات موضوعية: JLTFET, Dual-dielectric gate, Heterogeneous material, Charge plasma concept, Band-to-band tunneling, Technology

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590123025001574; https://doaj.org/toc/2590-1230

URL الوصول: https://doaj.org/article/bef24827669c4a8ba578de9f47684ee6

المؤلفون: Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen

المصدر: Tạp chí Khoa học Đại học Đà Lạt, Vol 14, Iss 3S (2024)

مصطلحات موضوعية: Band-to-band tunneling, Channel-buried oxide, Doping pocket, Line tunneling, Low bandgap TFET., Science, Social Sciences

وصف الملف: electronic resource

Relation: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313; https://doaj.org/toc/0866-787X

URL الوصول: https://doaj.org/article/365b821bbd59401e8682f4d8ecb5bef9

المؤلفون: Chi-Cheng Tien, Yu-Hsien Lin

المصدر: IEEE Access, Vol 12, Pp 83629-83637 (2024)

مصطلحات موضوعية: Band-to-band tunneling (BTBT), CMOS, TFET, inverter, gate-all-around (GAA), low temperature, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10550940/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/bd1558ce295b4c2aab846b3190832d35

المؤلفون: Hyeong-Chan Son, Hyunwoo Kim

المصدر: IEEE Access, Vol 12, Pp 145393-145399 (2024)

مصطلحات موضوعية: Soft error, single-event transient (SET), gate-all-around (GAA), band-to-band tunneling (BTBT), ternary CMOS, heavy-ion effect, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10701305/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/11fb6963d4c64a0a989683d2ae32b1e7

المؤلفون: Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 948-955 (2024)

مصطلحات موضوعية: Gate-all-around (GAA), band-to-band tunneling (BTBT), depletion region, tunnel field-effect transistor (TFET), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10713252/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/1d9adcd9dfc04d16848f5e967acd1d2d

المؤلفون: Jyi-Tsong Lin, Shao-Cheng Weng

المصدر: Discover Nano, Vol 18, Iss 1, Pp 1-13 (2023)

مصطلحات موضوعية: Control gate (CG), Tunnel FET (TFET), Subthreshold swing, Schottky contact, Line tunneling, Band-to-band tunneling (BTBT), Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/145d5182cc2f451e94130ee3ea4cac49

المؤلفون: Bui, Huu Thai, Shih, Chun-Hsing, Nguyen, Dang Chien, Nguyễn, Đăng Chiến

المصدر: Dalat University Journal of Science; Volume 14, Issue 3S (2024): Natural Sciences and Technology; 61-75 ; Tạp chí Khoa học Đại học Đà Lạt; Tập 14, Số 3S (2024): Chuyên san Khoa học Tự nhiên và Công nghệ; 61-75 ; 0866-787X

مصطلحات موضوعية: Band-to-band tunneling, Channel-buried oxide, Doping pocket, Line tunneling, Low bandgap TFET

وصف الملف: application/pdf

Relation: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313/558; https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313

الاتاحة: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313

المؤلفون: Cong Li, Yali Shao, Fengyu Kuang, Fang Liu, Yunqi Wang, Xiaoming Li, Yiqi Zhuang

المصدر: Micromachines, Vol 15, Iss 4, p 424 (2024)

مصطلحات موضوعية: gate-all-around (GAA), band-to-band tunneling (BTBT), reliability, self-heating effect (SHE), nanosheet field-effect transistor (NSFET), Mechanical engineering and machinery, TJ1-1570

Relation: https://www.mdpi.com/2072-666X/15/4/424; https://doaj.org/toc/2072-666X; https://doaj.org/article/979f7537c9b04e0584b7ec01e978b396

الاتاحة: https://doi.org/10.3390/mi15040424
https://doaj.org/article/979f7537c9b04e0584b7ec01e978b396

المؤلفون: Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem

المصدر: Nanomaterials, Vol 14, Iss 2, p 220 (2024)

مصطلحات موضوعية: Graphene nanoribbon (GNR), tunnel field-effect transistors (TFETs), junctionless (JL), quantum simulation, band-to-band tunneling (BTBT), work function (WF), Chemistry, QD1-999

Relation: https://www.mdpi.com/2079-4991/14/2/220; https://doaj.org/toc/2079-4991; https://doaj.org/article/7ecc488435584b548394ba7d2c112832

الاتاحة: https://doi.org/10.3390/nano14020220
https://doaj.org/article/7ecc488435584b548394ba7d2c112832

المؤلفون: Pal, Arnab, Cao, Wei, Banerjee, Kaustav

المصدر: IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(10)

مصطلحات موضوعية: TFETs, Logic gates, Tunneling, Electric potential, Mathematical model, Integrated circuit modeling, Computational modeling, 2-D materials, 2-D semiconductors, band-to-band tunneling, compact modeling, heterojunction, low-power, nonequilibrium Green's function, quantum device, steep-slope transistor, tunneling field-effect transistor, van der Waals heterostructures, Electrical and Electronic Engineering, Applied Physics

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/23r4j0g8

المؤلفون: Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 619-623 (2023)

مصطلحات موضوعية: Cryogenic, FDSOI, band-to-band tunneling, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10298641/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/5c159406494142bfaddbc87b45814b01

المؤلفون: Luisier, Mathieu, id_orcid:0 000-0002-2212-7972, Klinkert, Cedric, id_orcid:0 000-0003-2385-2727, Fiore, Sara, Backman, Jonathan, Lee, Youseung, id_orcid:0 000-0001-8893-0904, Stieger, Christian, Szabó, Áron

المساهمون: Cresti, Alessandro

المصدر: Beyond‐CMOS: State of the Art and Trends

مصطلحات موضوعية: 2D materials, advanced logic applications, field-effect transistors, band-to-band tunneling field-effect transistors, metallic electrodes, phosphorus atoms, transition metal dichalcogenides

وصف الملف: application/application/pdf

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781789451276; info:eu-repo/semantics/altIdentifier/isbn/9781394228713; http://hdl.handle.net/20.500.11850/653601; urn:isbn:9781789451276; urn:isbn:9781394228713

الاتاحة: https://hdl.handle.net/20.500.11850/653601
https://doi.org/10.3929/ethz-b-000653601

المؤلفون: Ahmed Shaker, Islam Sayed, Mohamed Abouelatta, Wael Fikry, S. Marwa Salem, Mohamed El-Banna

المصدر: Ain Shams Engineering Journal, Vol 14, Iss 7, Pp 102007- (2023)

مصطلحات موضوعية: InAs DG-TFET, Physically-based model, Band-to-band tunneling (BTBT), Electron Quasi-Fermi Potential (eQFP), Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2090447922003185; https://doaj.org/toc/2090-4479

URL الوصول: https://doaj.org/article/5783a20aff6b41d090ace9027cef329f

المؤلفون: Gunhoo Woo, Taesung Kim, Hocheon Yoo

المصدر: Advanced Electronic Materials, Vol 9, Iss 2, Pp n/a-n/a (2023)

مصطلحات موضوعية: band‐to‐band tunneling, memory, multilevel logic, nanoemitter, negative differential resistance, photodetectors, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/538cfef425754ec38e30442df5f8fa6b

المؤلفون: Haiwu Xie, Hongxia Liu

المصدر: Micromachines; Volume 14; Issue 7; Pages: 1413

مصطلحات موضوعية: band-to-band tunneling (BTBT), linear energy transfer value (LET), single-particle irradiation effect, anti-irradiation optimization

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi14071413

الاتاحة: https://doi.org/10.3390/mi14071413

المؤلفون: Haiwu Xie, Hongxia Liu

المصدر: Micromachines; Volume 14; Issue 4; Pages: 805

مصطلحات موضوعية: biosensors, band to band tunneling (BTBT), tunnel field effect transistor (TFET), dual material gate heterostructure junctionless tunnel field-effect transistor (DMG-HJLTFET)

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14040805

الاتاحة: https://doi.org/10.3390/mi14040805

المؤلفون: Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li

المصدر: Micromachines; Volume 14; Issue 4; Pages: 784

مصطلحات موضوعية: band-to-band tunneling (BTBT), heterojunction, pocket, heterogate dielectric, DGTFET

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/mi14040784

الاتاحة: https://doi.org/10.3390/mi14040784