المؤلفون: Renz, Arne Benjamin, Vavasour, Oliver James, Pérez-Tomás, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W.C., Mawby, Phil, Gammon, Peter

مصطلحات موضوعية: 4H-SiC, TK, P O surface passivation 2 5, Schottky barrier diodes, 3.3 kV JBS diodes, QC

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5bad371ed10260abeddfb72fe7d4b034
http://wrap.warwick.ac.uk/166204/1/WRAP-engineering-Schottky-interface-3.3-kV-SiC-JBS-diodes-using-P2O5-surface-passivation-treatment-2022.pdf