المؤلفون: B. Frank Yang, R. Takalkar, Z. Ren, L. Black, A. Dube, J.W. Weijtmans, J. Li, J.B. Johnson, J. Faltermeier, A. Madan, Z. Zhu, A. Turansky, G. Xia, A. Chakravarti, R. Pal, K. Chan, A. Reznicek, T.N. Adam, B. Yang, J.P. de Souza, E.C.T. Harley, B. Greene, A. Gehring, M. Cai, D. Aime, S. Sun, H. Meer, J. Holt, D. Theodore, S. Zollner, P. Grudowski, D. Sadana, D.-G. Park, D. Mocuta, D. Schepis, E. Maciejewski, S. Luning, J. Pellerin, E. Leobandung

المصدر: 2008 IEEE International Electron Devices Meeting.

مصطلحات موضوعية: In situ, Materials science, Phosphorus doped, Silicon, chemistry, MOSFET, Ultimate tensile strength, Doping, Electronic engineering, Analytical chemistry, chemistry.chemical_element, Mosfet circuits, Epitaxy

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4be978b7620a3fb60241f50d73353f21
https://doi.org/10.1109/iedm.2008.4796611