يعرض 1 - 20 نتائج من 123 نتيجة بحث عن '"Ayers, J. E."', وقت الاستعلام: 0.72s تنقيح النتائج
  1. 1
    Academic Journal
    Inclusion of Dislocation Pinning Interactions in a Model for Plastic Flow in II–VI Semiconductors

    المؤلفون: Kujofsa, T., Ayers, J. E.

    المصدر: Journal of Electronic Materials ; volume 49, issue 11, page 6990-6995 ; ISSN 0361-5235 1543-186X

    الاتاحة: http://dx.doi.org/10.1007/s11664-020-08419-w
    https://link.springer.com/content/pdf/10.1007/s11664-020-08419-w.pdf
    https://link.springer.com/article/10.1007/s11664-020-08419-w/fulltext.html

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  2. 2
    Academic Journal
    Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions

    المؤلفون: Kujofsa, T., Ayers, J. E.

    المصدر: Journal of Electronic Materials ; volume 49, issue 11, page 6977-6982 ; ISSN 0361-5235 1543-186X

    الاتاحة: http://dx.doi.org/10.1007/s11664-020-08353-x
    https://link.springer.com/content/pdf/10.1007/s11664-020-08353-x.pdf
    https://link.springer.com/article/10.1007/s11664-020-08353-x/fulltext.html

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  3. 3
    Academic Journal
    Lattice Relaxation of Epitaxial FAPbI3 on MAPbClxBr3-x (001).

    المؤلفون: Parent, Elisa, Raphael, Johanna, Kujofsa, Tedi, Ayers, J. E.

    المصدر: International Journal of High Speed Electronics & Systems; Mar/Dec2022, Vol. 31 Issue 1/4, p1-6, 6p

    مصطلحات موضوعية: CRYSTAL defects, PEROVSKITE, BROMINE


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  4. 4
    Academic Journal
    Critical Layer Thickness for Epitaxial FAPbBrxI3-x on KCl (001).

    المؤلفون: Parent, Elisa, Raphael, Johanna, Kujofsa, Tedi, Ayers, J. E.

    المصدر: International Journal of High Speed Electronics & Systems; Mar/Dec2022, Vol. 31 Issue 1/4, p1-5, 5p

    مصطلحات موضوعية: EPITAXIAL layers, THIN film deposition, CRYSTAL defects, PHOTOVOLTAIC power systems, SOLAR cells


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  5. 5
    Academic Journal
    Recent Advances in the Modeling of Strain Relaxation and Dislocation Dynamics in InGaAs/GaAs (001) Heterostructures.

    المؤلفون: Ayers, J. E.1 (AUTHOR) john.ayers@uconn.edu, Kujofsa, Tedi1 (AUTHOR) tedi.kujofsa@gmail.com, Raphael, Johanna2 (AUTHOR) johanna.raphael@gmail.com, Islam, Md Tanvirul1 (AUTHOR) tanvirislam.cs@gmail.com

    المصدر: International Journal of High Speed Electronics & Systems. Mar-Dec2020, Vol. 29 Issue 1-4, pN.PAG-N.PAG. 9p.

    مصطلحات موضوعية: *AUDITING standards, HETEROSTRUCTURES, DISLOCATION structure, SUPERLATTICES, THERMAL expansion, GETTERING, FLUX pinning


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  6. 6
    Academic Journal
    A Modeling Study of Dislocation Sidewall Gettering in II-VI and III-V Semiconductor Heterostructures.

    المؤلفون: Kujofsa, Tedi1 (AUTHOR) tedi.kujofsa@gmail.com, Ayers, J. E.1 (AUTHOR) john.ayers@uconn.edu

    المصدر: International Journal of High Speed Electronics & Systems. Mar-Dec2020, Vol. 29 Issue 1-4, pN.PAG-N.PAG. 6p.

    مصطلحات موضوعية: *INVENTIONS, *AUDITING standards, GETTERING, HETEROSTRUCTURES, SEMICONDUCTORS


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  7. 7
    Academic Journal
    A Zagging and Weaving Model for Dislocation Interactions in Heterostructures Containing Strain Reversals.

    المؤلفون: Kujofsa, Tedi1 (AUTHOR) tedi.kujofsa@gmail.com, Ayers, J. E.1 (AUTHOR) john.ayers@uconn.edu

    المصدر: International Journal of High Speed Electronics & Systems. Mar-Dec2020, Vol. 29 Issue 1-4, pN.PAG-N.PAG. 5p.

    مصطلحات موضوعية: *AUDITING standards, HETEROSTRUCTURES, WEAVING, SUPERLATTICES, WEAVING patterns, MULTILAYERS


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  8. 8
    Academic Journal
    Inheritance of Resistance to Gray Leaf Spot of Corn

    المؤلفون: Elwinger, G. F., Johnson, M. W., Hill, R. R., Ayers, J. E.

    المصدر: Crop Science ; volume 30, issue 2, page 350-358 ; ISSN 0011-183X 1435-0653

    الاتاحة: https://doi.org/10.2135/cropsci1990.0011183x003000020021x
    https://dl.sciencesocieties.org/publications/cs/pdfs/30/2/CS0300020350

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  9. 9
    Academic Journal
    Comparison of Buffer Layer Grading Approaches in InGaAs/GaAs (001).

    المؤلفون: Raphael, Johanna, Kujofsa, Tedi, Ayers, J. E.

    المصدر: International Journal of High Speed Electronics & Systems; Mar-Dec2020, Vol. 29 Issue 1-4, pN.PAG-N.PAG, 6p

    مصطلحات موضوعية: BUFFER layers, DISLOCATION density, AUDITING standards, INDIUM gallium arsenide, GALLIUM arsenide, SEMICONDUCTOR devices


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  10. 10
    Academic Journal
    Initial misfit dislocations in a graded heteroepitaxial layer.

    المؤلفون: Sidoti, D., Xhurxhi, S., Kujofsa, T., Cheruku, S., Correa, J. P., Bertoli, B., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

    المصدر: Journal of Applied Physics; Jan2011, Vol. 109 Issue 2, p023510, 5p, 1 Diagram, 1 Chart, 3 Graphs

    مصطلحات موضوعية: DISLOCATIONS in crystals, CRYSTALS, EPITAXY, HETEROJUNCTIONS, PHYSICS


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  11. 11
    Academic Journal
    Equilibrium strain and dislocation density in exponentially graded Si1-xGex/Si (001).

    المؤلفون: Bertoli, B., Sidoti, D., Xhurxhi, S., Kujofsa, T., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

    المصدر: Journal of Applied Physics; Dec2010, Vol. 108 Issue 11, p113525, 5p, 6 Graphs

    مصطلحات موضوعية: SEMICONDUCTORS, SILICON, GERMANIUM, LIGHT emitting diodes, TRANSISTORS


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  12. 12
    Academic Journal
    Misfit dislocation density and strain relaxation in graded semiconductor heterostructures with arbitrary composition profiles.

    المؤلفون: Bertoli, B., Suarez, E. N., Ayers, J. E., Jain, F. C.

    المصدر: Journal of Applied Physics; Oct2009, Vol. 106 Issue 7, p073519-073526, 7p, 1 Chart, 9 Graphs

    مصطلحات موضوعية: HETEROSTRUCTURES, SUPERLATTICES, EQUILIBRIUM, SEMICONDUCTORS, DENSITY, CRYSTALS, HETEROJUNCTIONS


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  13. 13
    Academic Journal
    Patterned heteroepitaxial processing applied to ZnSe and ZnS[sub 0.02]Se[sub 0.98] on GaAs (001).

    المؤلفون: Zhang, X. G., Rodriguez, A., Li, P., Jain, F. C., Ayers, J. E.

    المصدر: Journal of Applied Physics; 3/15/2002, Vol. 91 Issue 6, p3912, 6p, 3 Black and White Photographs, 3 Graphs

    مصطلحات موضوعية: DISLOCATIONS in metals, GLIDE (Crystallography)


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  14. 14
    Academic Journal
    Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures

    المؤلفون: Kujofsa, Tedi, Ayers, J. E.

    المصدر: Journal of Electronic Materials ; volume 45, issue 9, page 4580-4586 ; ISSN 0361-5235 1543-186X

    الاتاحة: http://dx.doi.org/10.1007/s11664-016-4659-2
    http://link.springer.com/content/pdf/10.1007/s11664-016-4659-2.pdf
    http://link.springer.com/article/10.1007/s11664-016-4659-2/fulltext.html
    http://link.springer.com/content/pdf/10.1007/s11664-016-4659-2

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  15. 15
    Academic Journal
    Threading Dislocation Behavior in InGaAs/GaAs (001) Superlattice Buffer Layers.

    المؤلفون: Islam, Md Tanvirul, Kujofsa, Tedi, Chen, Xinkang, Ayers, J. E.

    المصدر: International Journal of High Speed Electronics & Systems; Sep-Dec2019, Vol. 38 Issue 3/4, pN.PAG-N.PAG, 9p

    مصطلحات موضوعية: BUFFER layers, AUDITING standards, DISLOCATION density, SUPERLATTICES, INDIUM gallium arsenide, INDIUM


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  16. 16
    Academic Journal
    Dynamical X-Ray Diffraction Analysis of a GaAs/In0.3Ga0.7As Single Quantum Well Grown on a GaAs (001) Substrate.

    المؤلفون: Althowibi, F. A.1 fhdamer@gmail.com, Ayers, J. E.2 john.ayers@uconn.edu

    المصدر: International Journal of High Speed Electronics & Systems. Mar-Jun2018, Vol. 27 Issue 1/2, pN.PAG-N.PAG. 11p.

    مصطلحات موضوعية: X-ray diffraction, GALLIUM arsenide, QUANTUM wells, BRAGG gratings, LATTICE constants


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  17. 17
    Academic Journal
    Evolution of Kinetically Limited Lattice Relaxation and Threading Dislocations in Temperature-Graded ZnSe/GaAs (001) Metamorphic Heterostructures

    المؤلفون: Kujofsa, T., Ayers, J. E.

    المصدر: Journal of Electronic Materials ; volume 44, issue 9, page 3030-3035 ; ISSN 0361-5235 1543-186X

    الاتاحة: http://dx.doi.org/10.1007/s11664-015-3745-1
    http://link.springer.com/content/pdf/10.1007/s11664-015-3745-1.pdf
    http://link.springer.com/article/10.1007/s11664-015-3745-1/fulltext.html
    http://link.springer.com/content/pdf/10.1007/s11664-015-3745-1

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  18. 18
    Academic Journal
    Design of S-Graded Buffer Layers for Metamorphic ZnS y Se1−y /GaAs (001) Semiconductor Devices

    المؤلفون: Kujofsa, T., Antony, A., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

    المصدر: Journal of Electronic Materials ; volume 42, issue 12, page 3408-3420 ; ISSN 0361-5235 1543-186X

    الاتاحة: http://dx.doi.org/10.1007/s11664-013-2771-0
    http://link.springer.com/content/pdf/10.1007/s11664-013-2771-0.pdf
    http://link.springer.com/article/10.1007/s11664-013-2771-0/fulltext.html
    http://link.springer.com/content/pdf/10.1007/s11664-013-2771-0

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  19. 19
    Academic Journal
    Relaxation Dynamics and Threading Dislocations in ZnSe and ZnS y Se1−y /GaAs (001) Heterostructures

    المؤلفون: Kujofsa, T., Cheruku, S., Yu, W., Outlaw, B., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

    المصدر: Journal of Electronic Materials ; volume 42, issue 9, page 2764-2770 ; ISSN 0361-5235 1543-186X

    الاتاحة: http://dx.doi.org/10.1007/s11664-013-2668-y
    http://link.springer.com/content/pdf/10.1007/s11664-013-2668-y.pdf
    http://link.springer.com/article/10.1007/s11664-013-2668-y/fulltext.html
    http://link.springer.com/content/pdf/10.1007/s11664-013-2668-y

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  20. 20
    Academic Journal
    Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator

    المؤلفون: Chan, P.-Y., Gogna, M., Suarez, E., Al-Amoody, F., Karmakar, S., Miller, B. I., Heller, E. K., Ayers, J. E., Jain, F. C.

    المصدر: Journal of Electronic Materials ; volume 42, issue 11, page 3259-3266 ; ISSN 0361-5235 1543-186X

    الاتاحة: http://dx.doi.org/10.1007/s11664-013-2651-7
    http://link.springer.com/content/pdf/10.1007/s11664-013-2651-7.pdf
    http://link.springer.com/article/10.1007/s11664-013-2651-7/fulltext.html
    http://link.springer.com/content/pdf/10.1007/s11664-013-2651-7

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