المؤلفون: Sarpatwari, K., Awadelkarim, O. O., Allen, M. W., Durbin, S. M., Mohney, S. E.

المصدر: Applied Physics Letters ; volume 95, issue 5 ; ISSN 0003-6951 1077-3118

الاتاحة: https://doi.org/10.1063/1.3197618
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3197618/13084944/059901_1_online.pdf

المؤلفون: Sarpatwari, K., Mohney, S. E., Awadelkarim, O. O.

المصدر: Journal of Applied Physics; Jan2011, Vol. 109 Issue 1, p014510, 7p, 1 Chart, 8 Graphs

مصطلحات موضوعية: SCHOTTKY barrier diodes, ELECTRIC currents, ELECTRIC potential, EXTRACTION (Chemistry), DIODES

المؤلفون: Awadelkarim, O. O., Fonash, S. J., Mikulan, P. I., Chan, Y. D.

المصدر: Journal of Applied Physics. 1/1/1996, Vol. 79 Issue 1, p517. 9p.

مصطلحات موضوعية: *TRANSISTORS, *SILICON compounds, *PLASMA dynamics, *PHYSICS

المؤلفون: Awadelkarim, O. O., Mikulan, P. I., Gu, T., Reinhardt, K. A., Chan, Y. D.

المصدر: Journal of Applied Physics. 8/15/1994, Vol. 76 Issue 4, p2270. 9p. 2 Charts, 7 Graphs.

مصطلحات موضوعية: *BORON, *SILICON, *CRYSTAL etching

المؤلفون: Awadelkarim, O. O., Suliman, S. A., Monemar, B., Lindström, J. L., Zhang, Y., Corbett, J. W.

المصدر: Journal of Applied Physics. 1/1/1990, Vol. 67 Issue 1, p270. 6p. 6 Graphs.

مصطلحات موضوعية: *CARBON, *SILICON, *BORON

المؤلفون: Henry, A., Awadelkarim, O. O., Lindström, J. L., Oehrlein, G. S.

المصدر: Journal of Applied Physics. 12/1/1989, Vol. 66 Issue 11, p5388. 6p. 8 Graphs.

مصطلحات موضوعية: *IONIZED gases, *DEUTERIUM, *BORON, *DIODES

المؤلفون: Awadelkarim, O. O., Monemar, B.

المصدر: Journal of Applied Physics. 6/15/1989, Vol. 65 Issue 12, p4779. 10p.

مصطلحات موضوعية: *PHOSPHORUS, *SILICON, *DEEP level transient spectroscopy

المؤلفون: Awadelkarim, O. O., Monemar, B.

المصدر: Journal of Applied Physics. 12/1/1988, Vol. 64 Issue 11, p6301. 5p. 5 Graphs.

مصطلحات موضوعية: *SEMICONDUCTOR defects, *DEEP level transient spectroscopy, *SILICON

المؤلفون: Awadelkarim, O. O., Monemar, B.

المصدر: Journal of Applied Physics. 12/1/1988, Vol. 64 Issue 11, p6306. 5p. 5 Graphs.

مصطلحات موضوعية: *IMPURITY centers, *SEMICONDUCTOR defects, *IRON, *SILICON, *DEEP level transient spectroscopy

المؤلفون: Awadelkarim, O. O., Weman, H., Svensson, B. G., Lindström, J. L.

المصدر: Journal of Applied Physics. 9/15/1986, Vol. 60 Issue 6, p1974. 6p. 6 Graphs.

مصطلحات موضوعية: *MATERIALS at high temperatures, *SILICON, *DEEP level transient spectroscopy, *PHOTOLUMINESCENCE

المؤلفون: Weman, H., Henry, A., Begum, T., Monemar, B., Awadelkarim, O. O., Lindström, J. L.

المصدر: Journal of Applied Physics; 1/1/1989, Vol. 65 Issue 1, p137, 9p, 12 Graphs

مصطلحات موضوعية: GOLD, DIFFUSION, SILICON

المؤلفون: Sarpatwari, K., Mohney, S. E., Ashok, S., Awadelkarim, O. O.

المصدر: physica status solidi (a) ; volume 207, issue 6, page 1509-1513 ; ISSN 1862-6300 1862-6319

الاتاحة: http://dx.doi.org/10.1002/pssa.200925339
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.200925339
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.200925339

المؤلفون: Sarpatwari, K., Awadelkarim, O. O., Allen, M. W., Durbin, S. M., Mohney, S. E.

المصدر: Applied Physics Letters ; volume 94, issue 24 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.3156031
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3156031/13347437/242110_1_online.pdf

المؤلفون: Suliman, S A, Gollagunta, N, Trabzon, L, Hao, J, Ridley, R S, Knoedler, C M, Dolny, G M, Awadelkarim, O O, Fonash, S J

المصدر: Semiconductor Science and Technology ; volume 16, issue 6, page 447-454 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/0268-1242/16/6/305

المؤلفون: Trabzon, L, Awadelkarim, O O

المصدر: Semiconductor Science and Technology ; volume 15, issue 4, page 309-314 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/0268-1242/15/4/301

المؤلفون: Wang, Y. Z., Awadelkarim, O. O.

المصدر: physica status solidi (a) ; volume 176, issue 2, page 885-909 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/(sici)1521-396x(199912)176:2%3C885::aid-pssa885%3E3.0.co%3B2-l
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F(SICI)1521-396X(199912)176:2%3C885::AID-PSSA885%3E3.0.CO%3B2-L
https://onlinelibrary.wiley.com/doi/full/10.1002/(SICI)1521-396X(199912)176:2%3C885::AID-PSSA885%3E3.0.CO%3B2-L

المؤلفون: Wang, Y. Z., Awadelkarim, O. O.

المصدر: MRS Proceedings ; volume 508 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-508-91
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S194642740022736X

المؤلفون: Wang, Y. Z., Awadelkarim, O. O.

المصدر: Journal of Electronic Materials ; volume 27, issue 11, page L77-L80 ; ISSN 0361-5235 1543-186X

الاتاحة: http://dx.doi.org/10.1007/s11664-998-0084-5
http://link.springer.com/content/pdf/10.1007/s11664-998-0084-5.pdf
http://link.springer.com/article/10.1007/s11664-998-0084-5/fulltext.html
http://link.springer.com/content/pdf/10.1007/s11664-998-0084-5

المؤلفون: Chen, W. M., Awadelkarim, O. O., Monemar, B., Lindström, J. L., Oehrlein, G. S.

المصدر: Physical Review Letters ; volume 80, issue 2, page 423-423 ; ISSN 0031-9007 1079-7114

الاتاحة: http://dx.doi.org/10.1103/physrevlett.80.423
http://link.aps.org/article/10.1103/PhysRevLett.80.423
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.80.423/fulltext

المؤلفون: Trabzon, L., Awadelkarim, O. O., Werking, J., Bersuker, G., Chan, Y. D.

المصدر: Journal of Applied Physics ; volume 81, issue 3, page 1575-1580 ; ISSN 0021-8979 1089-7550

الاتاحة: http://dx.doi.org/10.1063/1.363892
https://pubs.aip.org/aip/jap/article-pdf/81/3/1575/18689922/1575_1_online.pdf