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1Academic Journal
المؤلفون: Mazzillo, M., Condorelli, G., Sanfilippo, D., Fallica, G., Sciacca, E., Aurite, S., Lombardo, S., Rimini, E., Belluso, M., Billotta, S., Bonanno, G., Campisi, A., Cosentino, L., Finocchiaro, P., Musumeci, F., Privitera, S., Tudisco, S.
المصدر: Optoelectronics Letters ; volume 3, issue 3, page 177-180 ; ISSN 1673-1905 1993-5013
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2Academic Journal
المؤلفون: Corso, D., Aurite, S., Sciacca, E., Naso, D., Lombardo, S., Santangelo, A., Nicotra, M.C., Cascino, S.
المصدر: Microelectronics Reliability ; volume 47, issue 4-5, page 806-809 ; ISSN 0026-2714
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3Academic Journal
المؤلفون: Sciacca, Emilio, Condorelli, G., Aurite, S., Lombardo, S., Mazzillo, M., Sanfilippo, D., Fallica, G., Rimini, E.
المصدر: IEEE Electron Device Letters ; volume 29, issue 3, page 218-220 ; ISSN 0741-3106
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4
المؤلفون: Corso D, Aurite S, Sciacca E, Naso D, Lombardo S, Santangelo A, Nicotra MC, Cascino S
المصدر: Microelectronics and reliability 47 (2007): 806–809.
info:cnr-pdr/source/autori:Corso D, Aurite S, Sciacca E, Naso D, Lombardo S, Santangelo A, Nicotra MC, Cascino S/titolo:Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage/doi:/rivista:Microelectronics and reliability/anno:2007/pagina_da:806/pagina_a:809/intervallo_pagine:806–809/volume:47