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    المصدر: Microelectronics and reliability 47 (2007): 806–809.
    info:cnr-pdr/source/autori:Corso D, Aurite S, Sciacca E, Naso D, Lombardo S, Santangelo A, Nicotra MC, Cascino S/titolo:Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage/doi:/rivista:Microelectronics and reliability/anno:2007/pagina_da:806/pagina_a:809/intervallo_pagine:806–809/volume:47