المؤلفون: Hamady, Saleem, Beydoun, Bilal, Morancho, Frédéric

المساهمون: American University of The Middle East Eqaila, CESI : groupe d’Enseignement Supérieur et de Formation Professionnelle (CESI), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), Composants et Systèmes pour l'Energie Electrique (SATIE-CSEE), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers CNAM (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY)-École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers CNAM (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY), École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers CNAM (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)

المصدر: ISSN: 2079-9292 ; Electronics ; https://laas.hal.science/hal-04887718 ; Electronics, 2025, 14 (2), pp.313. ⟨10.3390/electronics14020313⟩.

مصطلحات موضوعية: HEMT, TCAD simulation, Silvaco, AlN interlayer, buried p-region, GaN, [SPI]Engineering Sciences [physics], [PHYS]Physics [physics]

الاتاحة: https://laas.hal.science/hal-04887718
https://laas.hal.science/hal-04887718v1/document
https://laas.hal.science/hal-04887718v1/file/electronics-14-00313.pdf
https://doi.org/10.3390/electronics14020313

المؤلفون: Isabel Streicher (14332633), Stefano Leone (208483), Christian Manz (13821956), Lutz Kirste (14332636), Mario Prescher (14332639), Patrick Waltereit (14332642), Michael Mikulla (14332645), Rüdiger Quay (14332648), Oliver Ambacher (1599169)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Cell Biology, Biotechnology, Ecology, Immunology, Plant Biology, Physical Sciences not elsewhere classified, sheet resistance (<, 98 × 10, 900 ° c, 52 × 10, 25 × 10, 1200 ° c, dimensional electron gas, nominal aln interlayer, aln interlayer increases, gan heterostructures suitable, graded algan interlayer, electron mobility transistors, sh , barrier growth temperature, ), 13 , gan heterostructures grown, graded algan interlayers, gan heterostructures, electron mobility,

Relation: https://figshare.com/articles/journal_contribution/Effect_of_AlN_and_AlGaN_Interlayers_on_AlScN_GaN_Heterostructures_Grown_by_Metal_Organic_Chemical_Vapor_Deposition/21821260

الاتاحة: https://doi.org/10.1021/acs.cgd.2c01013.s001

المؤلفون: Douara, Abdelmalek, Rabehi, Abdelaziz, Baitiche, Oussama

المصدر: Revista Mexicana de Física; Vol. 69 No. 3 May-Jun (2023): Revista Mexicana de Física; 031602 1–6 ; Revista Mexicana de Física; Vol. 69 Núm. 3 May-Jun (2023): Revista Mexicana de Física; 031602 1–6 ; 2683-2224 ; 0035-001X

مصطلحات موضوعية: HEMTs, AlN interlayer, Nextnano, 2D–electron gas

وصف الملف: application/pdf

Relation: https://rmf.smf.mx/ojs/index.php/rmf/article/view/6689/6719; https://rmf.smf.mx/ojs/index.php/rmf/article/view/6689

الاتاحة: https://rmf.smf.mx/ojs/index.php/rmf/article/view/6689
https://doi.org/10.31349/RevMexFis.69.031602

المؤلفون: Ramesh, Raju, Arivazhagan, Ponnusamy, Prabakaran, K., Sanjay, S., Baskar, K.

المساهمون: Ilkka Tittonen Group, Indian Institute of Technology, Hunan University, Koneru Lakshmaiah Education Foundation, Anna University, Department of Electronics and Nanoengineering, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: MOCVD, AlGaN, AlN Interlayer, Atomic force microscopy, Hall measurement, Time resolved photoluminescence

وصف الملف: application/pdf

Relation: Materials Chemistry and Physics; Volume 259; Ramesh , R , Arivazhagan , P , Prabakaran , K , Sanjay , S & Baskar , K 2021 , ' Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition ' , Materials Chemistry and Physics , vol. 259 , 124003 . https://doi.org/10.1016/j.matchemphys.2020.124003; PURE UUID: d1705b71-211d-460f-9293-dd35d550329f; PURE ITEMURL: https://research.aalto.fi/en/publications/d1705b71-211d-460f-9293-dd35d550329f; PURE LINK: http://www.scopus.com/inward/record.url?scp=85096356513&partnerID=8YFLogxK; PURE LINK: http://www.sciencedirect.com/science/article/pii/S0254058420313638; PURE FILEURL: https://research.aalto.fi/files/53436449/Ramesh_Influence_of_Ain_interlayer_MC.pdf; https://aaltodoc.aalto.fi/handle/123456789/61806; URN:NBN:fi:aalto-2020113020651

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/61806
https://doi.org/10.1016/j.matchemphys.2020.124003

المؤلفون: Chikara Arii, Masakazu Sugiyama, Momoko Deura, Takeshi Momose, Takuya Nakahara, Yoshiaki Nakano, Yukihiro Shimogaki, 中原 拓也, 中野 義昭, 出浦 桃子, 有井 知良, 杉山 正和, 百瀬 健, 霜垣 幸浩

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3615

المؤلفون: Masakazu Sugiyama, Michihiro Suzuki, Momoko Deura, Takeshi Momose, Takuya Nakahara, Yoshiaki Nakano, Yukihiro Shimogaki, 中原 拓也, 中野 義昭, 出浦 桃子, 杉山 正和, 百瀬 健, 鈴木 道洋, 霜垣 幸浩

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :3410

المؤلفون: Hiroshi AMANO, Isamu AKASAKI, Motoaki IWAYA, Satoshi KAMIYAMA, 上山 智, 天野 浩, 岩谷 素顕, 赤崎 勇

المصدر: レーザー研究 / The Review of Laser Engineering. 2004, 32(6):387

المؤلفون: Süleyman Özçelik, Ekmel Ozbay, Z. Tekeli, Demet Usanmaz, Mehmet Çakmak, S. Çörekçi

المساهمون: Özbay, Ekmel

المصدر: Journal of Nanoscience and Nanotechnology

مصطلحات موضوعية: Electron mobility, Materials science, Morphology (linguistics), Transistor, Biomedical Engineering, Analytical chemistry, Induced high electron mobility transistor, Bioengineering, AlGan/GaN high electron mobility transistor, General Chemistry, High-electron-mobility transistor, Substrate (electronics), Condensed Matter Physics, Metal organic chemical vapor deposition, law.invention, Root mean square, Atomic force microscopy, law, AlN interlayer, General Materials Science, Layer (electronics)

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59ebaa74c0b053a198e4d5e03642f61e
https://doi.org/10.1166/jnn.2008.a181

المؤلفون: Lisesivdin, S. B., Yildiz, A., Kasap, M.

المساهمون: Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü

مصطلحات موضوعية: AlGaN/GaN, HEMT, Schrodinger equation, Poisson equation, 2DEG, AlN interlayer, AlGaN barrier

Relation: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; https://hdl.handle.net/20.500.12513/2455; 467; 470

الاتاحة: https://hdl.handle.net/20.500.12513/2455

المؤلفون: LİŞESİVDİN, SEFER BORA, Yildiz, A., Kasap, MEHMET

المساهمون: Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü

مصطلحات موضوعية: AlGaN/GaN, 2DEG, AlN interlayer, Poisson equation, AlGaN barrier, HEMT, Schrodinger equation

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1c66d4bc8ed1fc97076aeb1cb8501395
https://hdl.handle.net/20.500.12513/2455