المؤلفون: 肖细凤, 康俊勇

مصطلحات موضوعية: AlGaAs∶Sn, 第一原理赝势法, 类DX中心, AlGaAs:Sn, ab initio calculations, DX-like centers

Relation: 红外与毫米波学报,2002,(S1):87-90; HWYH2002S1020; http://dspace.xmu.edu.cn/handle/2288/156016

الاتاحة: http://dspace.xmu.edu.cn/handle/2288/156016

المؤلفون: 肖细凤, 康俊勇

مصطلحات موضوعية: Laplace缺陷谱, 俘获势垒, DX中心, AlGaAs∶Sn, Laplace Defect Spectroscopy (LDS), Capture Barriers, DX centers

Relation: 物理学报,2002,(01):138-142; WLXB200201023; http://dspace.xmu.edu.cn/handle/2288/155995

الاتاحة: http://dspace.xmu.edu.cn/handle/2288/155995

المؤلفون: 肖细凤, 康俊勇

مصطلحات موضوعية: Laplace缺陷谱, 俘获势垒, DX中心, AlGaAs∶Sn, Laplace Defect Spectroscopy （LDS）, Capture Barriers, DX centers

Relation: 物理学报，2002（1）：138-142; http://dspace.xmu.edu.cn/handle/2288/7675

الاتاحة: http://dspace.xmu.edu.cn/handle/2288/7675

المؤلفون: 肖细凤, 康俊勇

مصطلحات موضوعية: AlGaAs∶Sn, 第一原理赝势法, 类DX中心, ab initio calculations, DX-like centers

Relation: 红外与毫米波学报，2002（S1）：83-86; http://dspace.xmu.edu.cn/handle/2288/7676

الاتاحة: http://dspace.xmu.edu.cn/handle/2288/7676

المؤلفون: Litwin-Staszewska, E., Trzeciakowski, Witold A., Dmowski, Lesław H., Piotrzkowski, Ryszard, González Sotos, Luisa, Zytkiewicz, Z. R.

المساهمون: State Committee for Scientific Research (Poland)

مصطلحات موضوعية: Pressure sensors, Piezoresistivity, Graded-gap semiconductors, InGaP:Si, AlGaAs:Sn

Relation: https://doi.org/10.1016/S0924-4247(99)00235-6; Sí; Sensors and Actuators - A - Physical Sensors 78(2): 130-137 (1999); http://hdl.handle.net/10261/257139

الاتاحة: http://hdl.handle.net/10261/257139
https://doi.org/10.1016/S0924-4247(99)00235-6

المؤلفون: Z Żytkiewicz, L Gonzalez, L. H. Dmowski, Elzbieta Litwin-Staszewska, Witold Trzeciakowski, Ryszard Piotrzkowski

المساهمون: State Committee for Scientific Research (Poland)

المصدر: Digital.CSIC. Repositorio Institucional del CSIC
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مصطلحات موضوعية: Materials science, Hydrostatic pressure, Alloy, Edge (geometry), engineering.material, Epitaxy, InGaP:Si, Electrical resistivity and conductivity, Impurity, Piezoresistivity, Electronic engineering, Electrical and Electronic Engineering, Instrumentation, Si [InGaP], Sn [AlGaAs], Range (particle radiation), Condensed matter physics, Metals and Alloys, AlGaAs:Sn, Condensed Matter Physics, Pressure sensor, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Graded-gap semiconductors, Pressure sensors, engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04ae2ca2d4d983766ef456b767a2dc4f
http://hdl.handle.net/10261/257139

المؤلفون: 肖细凤

المساهمون: 康俊勇

المصدر: http://210.34.4.13:8080/lunwen/detail.asp?serial=2152.

مصطلحات موضوعية: AlGaAs: Sn, 俘获势垒, Laplace缺陷谱（LDS）方法, Capture Barriers, Laplace Defect Spectroscopy

Relation: http://210.34.4.28/opac/openlink.php?strText=5014&doctype=ALL&strSearchType=callno; http://dspace.xmu.edu.cn/handle/2288/55018

الاتاحة: http://dspace.xmu.edu.cn/handle/2288/55018

المؤلفون: State Committee for Scientific Research (Poland), Litwin-Staszewska, E., Trzeciakowski, Witold A., Dmowski, Lesław H., Piotrzkowski, Ryszard, González Sotos, Luisa, Zytkiewicz, Z. R.

مصطلحات الفهرس: Pressure sensors, Piezoresistivity, Graded-gap semiconductors, InGaP:Si, AlGaAs:Sn, artículo

URL: http://hdl.handle.net/10261/257139
https://doi.org/10.1016/S0924-4247(99)00235-6
https://doi.org/10.1016/S0924-4247(99)00235-6
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