المؤلفون: Yuan HR, Lu DC, Liu XL, Chen Z, Han P, Wang XH, Wang D, Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Atomic Force Microscopy, Crystal Morphology, Organic Vapor Phase Epitaxy, Nitrides, Chemical-vapor-deposition, Ain Buffer Layer, Gan, Sapphire, Aln, Epitaxy, Movpe, 半导体材料, biological specimen preparation, chemical vapor deposition, atomic layer deposition, vapor-plating, aluminum oxide, afm (microscopy), afm, scanning force microscopy, atomic force microscope, 晶癖, crystal structure, specimen preparation, biological techniques, biophysical instrumentation, biophysical techniques, crystal faces, crystal cleavage, faces (crystal)

Relation: JOURNAL OF CRYSTAL GROWTH; Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D .Statistical investigation on morphology development of gallium nitride in initial growth stage ,JOURNAL OF CRYSTAL GROWTH,2002,234(1):77-84; http://ir.semi.ac.cn/handle/172111/12036

الاتاحة: http://ir.semi.ac.cn/handle/172111/12036

المؤلفون: Yuan HR, Chen Z, Lu DC, Liu XL, Han PD, Wang XH, Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Computer Simulation, Crystal Morphology, Atomic Force Microscopy, Nitrides, Ain Buffer Layer, Sapphire, 半导体材料, biological specimen preparation, aluminum oxide, 计算机仿真, computer imitation, 计算机模拟, computer modeling, computer models, modeling, computer, models, simulation, computer applications, mathematical models, computer aided analysis, modelling, computerised monitoring, monitoring, computerised, computerized, computerised navigation, control system analysis computing, electric machine analysis computing, computersimulierung

Relation: JOURNAL OF CRYSTAL GROWTH; Yuan HR; Chen Z; Lu DC; Liu XL; Han PD; Wang XH .A geometrical model of GaN morphology in initial growth stage ,JOURNAL OF CRYSTAL GROWTH,2002,234(1):115-120; http://ir.semi.ac.cn/handle/172111/12042

الاتاحة: http://ir.semi.ac.cn/handle/172111/12042

المؤلفون: Zheng XH, Feng ZH, Wang YT, Zheng WL, Jia QJ, Jiang XM, Yang H, Liang JW, Zheng XH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Nucleation Layers, X-ray Diffraction, Metalorganic Chemical Vapor Deposition, Gallium Compounds, Nitrides, Light-emitting-diodes, Chemical-vapor-deposition, Ain Buffer Layer, Grown Gan, Sapphire Substrate, Quality, Films, Blue, Temperature, Evolution, 半导体材料, x-ray crystallography, metal organic chemical vapor deposition, light emitting diodes, chemical vapor deposition, atomic layer deposition, vapor-plating, photography--films, finite volume method, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams

Relation: JOURNAL OF CRYSTAL GROWTH; Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW .Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2002,242 (1-2):124-128; http://ir.semi.ac.cn/handle/172111/11858

الاتاحة: http://ir.semi.ac.cn/handle/172111/11858

المؤلفون: Zhu QS, Matsushima H, Hiramatsu K, Sawaki N, Zhu QS,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Chemical Vapor-deposition, Ain Buffer Layer, Growth, Facets, Wires, Mocvd, 半导体化学, chemical vapor deposition, atomic layer deposition, vapor-plating, development, flat surfaces, wire rope, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe

Relation: APPLIED SURFACE SCIENCE; Zhu QS; Matsushima H; Hiramatsu K; Sawaki N .Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE ,APPLIED SURFACE SCIENCE,2000,167(3-4):149-151; http://ir.semi.ac.cn/handle/172111/12436

الاتاحة: http://ir.semi.ac.cn/handle/172111/12436

المؤلفون: Rosales, D., Gil, B., Bretagnon, T., Guizal, B., Zhang, F., Okur, S., Monavarian, M., Izyumskaya, N., Avrutin, V., Özgür, Ü, Morkoç, H., Leach, J. H.

المصدر: Electrical and Computer Engineering Publications

مصطلحات موضوعية: AIN BUFFER LAYER, GAN FILMS, PIEZOELECTRIC FIELDS, OPTICAL ANISOTROPY, PLANE GAN, SAPPHIRE, GROWTH, ALGAN, SUBSTRATE, DIODES, Electrical and Computer Engineering

وصف الملف: application/pdf

Relation: https://scholarscompass.vcu.edu/egre_pubs/194; https://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1139&context=egre_pubs

الاتاحة: https://scholarscompass.vcu.edu/egre_pubs/194
https://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1139&context=egre_pubs

المؤلفون: Rouviere, Jl, Arlery, M., Niebuhr, R., Bachem, Kh, Briot, Olivier

المساهمون: Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

المصدر: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY ; European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials ; https://hal.science/hal-00546205 ; European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166

مصطلحات موضوعية: buffer layers, inversion domains, transmission electron microscopy, AIN BUFFER LAYER, SUBSTRATE, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

جغرافية الموضوع: France

Time: STRASBOURG (FRANCE), France

Relation: hal-00546205; https://hal.science/hal-00546205

الاتاحة: https://hal.science/hal-00546205

المؤلفون: Rouviere, Jl, Arlery, M., Niebuhr, R., Bachem, Kh, Briot, Olivier

المساهمون: Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)

المصدر: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY ; European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials ; https://hal.archives-ouvertes.fr/hal-00546205 ; European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166

مصطلحات موضوعية: buffer layers, inversion domains, transmission electron microscopy, AIN BUFFER LAYER, SUBSTRATE, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

جغرافية الموضوع: France

Time: STRASBOURG (FRANCE), France

Relation: hal-00546205; https://hal.archives-ouvertes.fr/hal-00546205

الاتاحة: https://hal.archives-ouvertes.fr/hal-00546205

المؤلفون: Cheng, LS, Zhang, Z, Zhang, GY, Yang, ZJ

المساهمون: Cheng, LS (reprint author), Chinese Acad Sci, Beijing Lab Electron Microscopy, Dept Condensed Matter Phys, POB 2724, Beijing 100080, Peoples R China., Chinese Acad Sci, Beijing Lab Electron Microscopy, Dept Condensed Matter Phys, Beijing 100080, Peoples R China., Beijing Univ, Dept Phys, Lab Mesoscop Phys, Beijing 100871, Peoples R China., Chinese Acad Sci, Beijing Lab Electron Microscopy, Dept Condensed Matter Phys, POB 2724, Beijing 100080, Peoples R China.

المصدر: SCI

مصطلحات موضوعية: GaN, MOVPE, microstructure, dislocation, AIN BUFFER LAYER

Relation: JOURNAL OF CRYSTAL GROWTH.1998,191,(4),641-645.; 1022686; http://hdl.handle.net/20.500.11897/257836; WOS:000075688600008

الاتاحة: https://hdl.handle.net/20.500.11897/257836
https://doi.org/10.1016/S0022-0248(98)00383-2

المؤلفون: Yu, DP, Chen, LS, Zhang, GY, Tong, YZ, Yang, ZJ, Jin, SX, You, LP, Liu, ZQ, Zhang, Z

المساهمون: BEIJING UNIV,DEPT PHYS,LAB MESOSCOP PHYS & NANOSTRUCT,BEIJING 100871,PEOPLES R CHINA., CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA., BEIJING UNIV,ELECTRON MICROSCOPY LAB,BEIJING 100871,PEOPLES R CHINA.

المصدر: SCI

مصطلحات موضوعية: transmission electron microscopy, microstructure, gallium nitride, semiconductor, organometallic vapor phase epitaxy, AIN BUFFER LAYER, DIODES, MOVPE

Relation: DEFECT AND DIFFUSION FORUM.1997,148,122-128.; 1023827; http://hdl.handle.net/20.500.11897/401951; WOS:A1997XM07800005

الاتاحة: https://hdl.handle.net/20.500.11897/401951