المؤلفون: Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhoer, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., Pobegen, G.

المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48228.2024.10529465
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529465.pdf?arnumber=10529465

المؤلفون: Aichinger, T, Fankhauser, P, Goodman, R

المساهمون: Holthus, B, Manzenreiter, W

Relation: https://ora.ox.ac.uk/objects/uuid:78afd9e4-ea51-4713-9380-58fde702a745; https://doi.org/10.4324/9781315266114

الاتاحة: https://doi.org/10.4324/9781315266114
https://ora.ox.ac.uk/objects/uuid:78afd9e4-ea51-4713-9380-58fde702a745

المؤلفون: Mazumder, SK, Voss, LF, Dowling, KM, Conway, A, Hall, D, Kaplar, RJ, Pickrell, GW, Flicker, J, Binder, AT, Chowdhury, S, Veliadis, V, Luo, F, Khalil, S, Aichinger, T, Bahl, SR, Meneghini, M, Charles, AB

المساهمون: Mazumder, Sk, Voss, Lf, Dowling, Km, Conway, A, Hall, D, Kaplar, Rj, Pickrell, Gw, Flicker, J, Binder, At, Chowdhury, S, Veliadis, V, Luo, F, Khalil, S, Aichinger, T, Bahl, Sr, Meneghini, M, Charles, Ab

مصطلحات موضوعية: Device, electrical, material, optical, packaging, reliability, ultrawide bandgap (UWBG), wide bandgap (WBG)

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001042129300031; volume:11; issue:4; firstpage:3957; lastpage:3982; numberofpages:26; journal:IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS; https://hdl.handle.net/11577/3494691; https://ieeexplore.ieee.org/document/10129950

الاتاحة: https://hdl.handle.net/11577/3494691
https://doi.org/10.1109/JESTPE.2023.3277828
https://ieeexplore.ieee.org/document/10129950

المؤلفون: Berens, J, Bichelmaier, S, Fernando, NK, Thakur, PK, Lee, T-L, Mascheck, M, Wiell, T, Eriksson, SK, Kahk, JM, Lischner, J, Mistry, MV, Aichinger, T, Pobegen, G, Regoutz, A

المصدر: Journal of Physics: Energy , 2 (3) , Article 035001. (2020)

مصطلحات موضوعية: power electronics, silicon carbide, interface, defects, X-ray photoelectron spectroscopy, XPS, HAXPES

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10090788/1/Regoutz_Berens_2020_J._Phys._Energy_2_035001.pdf; https://discovery.ucl.ac.uk/id/eprint/10090788/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10090788/1/Regoutz_Berens_2020_J._Phys._Energy_2_035001.pdf
https://discovery.ucl.ac.uk/id/eprint/10090788/

المؤلفون: Berens, J, Bichelmaier, S, Fernando, NK, Thakur, PK, Lee, T-L, Mascheck, M, Wiell, T, Eriksson, SK, Matthias Kahk, J, Lischner, J, Mistry, M, Aichinger, T, Pobegen, G, Regoutz, A

المصدر: 11 ; 1

Relation: The Journal of High Energy Physics; http://hdl.handle.net/10044/1/104762

الاتاحة: http://hdl.handle.net/10044/1/104762
https://doi.org/10.1088/2515-7655/ab8c5e

المؤلفون: Gruber, G, Cottom, J, Meszaros, R, Koch, M, Pobegen, G, Aichinger, T, Peters, D, Hadley, P

المصدر: Journal of Applied Physics , 123 (16) , Article 161514. (2018)

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10056303/1/interface-carbon-danling.pdf; https://discovery.ucl.ac.uk/id/eprint/10056303/7/Cottom_1.4985856.pdf; https://discovery.ucl.ac.uk/id/eprint/10056303/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10056303/1/interface-carbon-danling.pdf
https://discovery.ucl.ac.uk/id/eprint/10056303/7/Cottom_1.4985856.pdf
https://discovery.ucl.ac.uk/id/eprint/10056303/

المؤلفون: Cottom, J, Gruber, G, Pobegen, G, Aichinger, T, Shluger, AL

المصدر: Journal of Applied Physics , 124 (4) , Article 045302. (2018)

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10054655/1/1.5024608.pdf; https://discovery.ucl.ac.uk/id/eprint/10054655/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10054655/1/1.5024608.pdf
https://discovery.ucl.ac.uk/id/eprint/10054655/

المؤلفون: Salmen, P., Feil, M.W., Waschneck, K., Reisinger, H., Rescher, G., Voss, I., Sievers, M., Aichinger, T.

المصدر: Microelectronics Reliability ; volume 135, page 114575 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2022.114575
https://api.elsevier.com/content/article/PII:S0026271422000993?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271422000993?httpAccept=text/plain

المؤلفون: Salmen, P., Feil, M. W., Waschneck, K., Reisinger, H., Rescher, G., Aichinger, T.

المصدر: 2021 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps46558.2021.9405207
http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405207.pdf?arnumber=9405207

المؤلفون: Goodman, R, Aichinger, T, Fankhauser, P

Relation: https://ora.ox.ac.uk/objects/uuid:b8ca3bf1-5e98-4ba5-8c2f-6985bf9d0e11; https://doi.org/10.1177/1745499917712609

الاتاحة: https://doi.org/10.1177/1745499917712609
https://ora.ox.ac.uk/objects/uuid:b8ca3bf1-5e98-4ba5-8c2f-6985bf9d0e11

المؤلفون: Cottom, J, Gruber, G, Hadley, P, Koch, M, Pobegen, G, Aichinger, T, Shluger, A

المصدر: Journal of Applied Physics , 119 (18) , Article 181507. (2016)

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/1497020/1/pdf_archiveJAPIAUvol_119iss_18181507_1_am.pdf; https://discovery.ucl.ac.uk/id/eprint/1497020/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/1497020/1/pdf_archiveJAPIAUvol_119iss_18181507_1_am.pdf
https://discovery.ucl.ac.uk/id/eprint/1497020/

المؤلفون: Cottom, J., Gruber, G., Pobegen, G., Aichinger, T., Shluger, A. L.

المصدر: Journal of Applied Physics; 2018, Vol. 124 Issue 4, pN.PAG-N.PAG, 10p, 2 Charts, 13 Graphs

مصطلحات موضوعية: MAGNETIC resonance, AB initio quantum chemistry methods, METAL oxide semiconductor field-effect transistors, ELECTRON traps, NITRIDATION

المؤلفون: Gruber, G., Cottom, J., Meszaros, R., Koch, M., Pobegen, G., Aichinger, T., Peters, D., Hadley, P.

المصدر: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 6p, 2 Diagrams, 1 Chart, 2 Graphs

مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, SILICON carbide, MAGNETIC resonance, CARBON-carbon bonds, POWER electronics, ELECTRON paramagnetic resonance

المؤلفون: Aichinger, T., Schmidt, M.

المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps45951.2020.9128223
http://xplorestaging.ieee.org/ielx7/9125439/9128217/09128223.pdf?arnumber=9128223

المؤلفون: Berens, J., Weger, M., Pobegen, G., Aichinger, T., Rescher, G., Schleich, C., Grasser, T.

المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps45951.2020.9129259
http://xplorestaging.ieee.org/ielx7/9125439/9128217/09129259.pdf?arnumber=9129259

المؤلفون: Maas, S., Reisinger, H., Aichinger, T., Rescher, G.

المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps45951.2020.9129232
http://xplorestaging.ieee.org/ielx7/9125439/9128217/09129232.pdf?arnumber=9129232

المؤلفون: Sievers, M., Findenig, B., Glavanovics, M., Aichinger, T., Deutschmann, B.

المساهمون: Austrian Research Promotion Agency, European Regional Development Fund

المصدر: Microelectronics Reliability ; volume 114, page 113731 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2020.113731
https://api.elsevier.com/content/article/PII:S0026271420304194?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271420304194?httpAccept=text/plain

المؤلفون: Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H.

المصدر: IEEE Transactions on Electron Devices ; volume 66, issue 11, page 4604-4616 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2019.2938262
http://xplorestaging.ieee.org/ielx7/16/8886611/08856250.pdf?arnumber=8856250

المؤلفون: Regoutz, A, Pobegen, G, Aichinger, T

المساهمون: Imperial College London

المصدر: 12085 ; 12079

مصطلحات موضوعية: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, GATE OXIDES

Relation: Journal of Materials Chemistry C; http://hdl.handle.net/10044/1/65744; https://dx.doi.org/10.1039/c8tc02935k

الاتاحة: http://hdl.handle.net/10044/1/65744
https://doi.org/10.1039/c8tc02935k

المؤلفون: Cottom, J., Gruber, G., Pobegen, G., Aichinger, T., Shluger, A. L.

المساهمون: Leverhulme Trust, Engineering and Physical Sciences Research Council

المصدر: Journal of Applied Physics ; volume 124, issue 4 ; ISSN 0021-8979 1089-7550

الاتاحة: http://dx.doi.org/10.1063/1.5024608
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.5024608/15216428/045302_1_online.pdf