المؤلفون: Yusof, Ahmad Sauffi, Ould Saad Hamady, Sidi, Hassan, Zainuriah, Ahmad, Mohd Anas, Ng, Sha Shiong, Lim, Way Foong

المصدر: Materials Science in Semiconductor Processing ; volume 172, page 108082 ; ISSN 1369-8001

الاتاحة: http://dx.doi.org/10.1016/j.mssp.2023.108082
https://api.elsevier.com/content/article/PII:S1369800123007758?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S1369800123007758?httpAccept=text/plain

المؤلفون: Hamzah, Nur Atiqah, Md Sahar, Mohd Ann Amirul Zulffiqal, Tan, Aik Kwan, Ahmad, Mohd Anas, Abdul Malik, Muhammad Fadhirul Izwan, Loo, Chin Chyi, Chang, Wei Sea, Ng, Sha Shiong

المصدر: Microelectronics International, 2022, Vol. 40, Issue 1, pp. 8-16.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/MI-03-2022-0042

المؤلفون: Fauzi, Najihah, Firdaus, Amirul, Haocheng, Zhao, Ahmad, Mohd Anas, Kawarada, Hiroshi, Falina, Shaili, Syamsul, Mohd

المساهمون: Malaysia Ministry of Higher Education

المصدر: Surfaces and Interfaces ; volume 58, page 105806 ; ISSN 2468-0230

الاتاحة: https://doi.org/10.1016/j.surfin.2025.105806
https://api.elsevier.com/content/article/PII:S2468023025000690?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S2468023025000690?httpAccept=text/plain

المؤلفون: Md Sahar, Mohd Ann Amirul Zulffiqal, Hassan, Zainuriah, Ng, Sha Shiong, Lim, Way Foong, Lau, Khai Shenn, Alias, Ezzah Azimah, Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Mohd Asri, Rahil Izzati

المصدر: Microelectronics International, 2021, Vol. 38, Issue 3, pp. 119-126.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/MI-02-2021-0017

المؤلفون: Hamzah, Nur Atiqah, Ahmad, Mohd Anas, Mohd Asri, Rahil Izzati, Alias, Ezzah Azimah, Md Sahar, Mohd Ann Amirul Zulffiqal, Sha Shiong, Ng, Hassan, Zainuriah

المصدر: Microelectronics International, 2021, Vol. 38, Issue 3, pp. 127-134.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/MI-02-2021-0016

المؤلفون: Yusof, Ahmad Sauffi, Hassan, Zainuriah, Ould Saad Hamady, Sidi, Ng, Sha Shiong, Ahmad, Mohd Anas, Lim, Way Foong, Che Seliman, Muhd Azi, Chevallier, Christyves, Fressengeas, Nicolas

المصدر: Microelectronics International, 2021, Vol. 38, Issue 3, pp. 105-112.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/MI-02-2021-0018

المؤلفون: Md Taib, Muhamad Ikram, Ahmad, Mohd Anas, Alias, Ezzah Azimah, Alhassan, Abdullah Ibrahim, Ajia, Idris A., Muhammed, Mufasila Mumthaz, Roqan, Iman S., DenBaars, Steven P., Speck, James, Nakamura, Shuji, Zainal, Norzaini

المساهمون: Material Science and Engineering Program, Physical Science and Engineering (PSE) Division, Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia., National Center for Nanotechnology and Semiconductor, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia., Materials Department, University of California, Santa Barbara, California 93106, USA.

وصف الملف: application/pdf

Relation: https://iopscience.iop.org/article/10.1088/1361-6641/acb2eb; Md Taib, M. I., Ahmad, M. A., Alias, E. A., Alhassan, A. I., Ajia, I., Muhammed, M. M., Roqan, I., DenBaars, S. P., Speck, J., Nakamura, S., & Zainal, N. (2023). Growth modification via indium surfactant for InGaN/GaN green LED. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/acb2eb; Semiconductor Science and Technology; http://hdl.handle.net/10754/687124

الاتاحة: http://hdl.handle.net/10754/687124
https://doi.org/10.1088/1361-6641/acb2eb

المؤلفون: Yusof, Ahmad Sauffi, Ould Saad Hamady, Sidi, Chevallier, Christyves, Fressengeas, Nicolas, Hassan, Zainuriah, Ng, Sha Shiong, Ahmad, Mohd Anas, Lim, Way Foong, Che Seliman, Muhd Azi

المساهمون: Providence Health Care, Universiti Sains Malaysia

المصدر: Materials Science in Semiconductor Processing ; volume 144, page 106614 ; ISSN 1369-8001

الاتاحة: http://dx.doi.org/10.1016/j.mssp.2022.106614
https://api.elsevier.com/content/article/PII:S1369800122001573?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S1369800122001573?httpAccept=text/plain

المؤلفون: Yusof, Ahmad Sauffi, Hassan, Zainuriah, Ng, Sha Shiong, Ahmad, Mohd Anas, Lim, Way Foong, Hamady, Sidi Ould Saad, Fressengeas, Nicolas

المساهمون: Institut Jean Lamour (IJL), Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL), Ministère de l'Enseignement supérieur, de la Recherche et de l'Innovation (MESRI), Programme Interdisciplinaire MAT-PULSE, ANR-15-IDEX-0004,LUE,Isite LUE(2015)

المصدر: ISSN: 1475-7435.

مصطلحات موضوعية: [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.MAT]Engineering Sciences [physics]/Materials

الاتاحة: https://hal.univ-lorraine.fr/hal-04722210
https://doi.org/10.1504/IJNT.2024.141754

المؤلفون: Azmi, Nor Syafiqah, Mazlan, Muhammad Naim, Taib, Mohd Ikram Md, Ahmad, Mohd Anas, Samsuri, Mohd Shahrul Nizam, Mansor, Marwan, Hisyam, Muhammad Iznul, Abu Bakar, Ahmad Shuhaimi, Zainal, Norzaini

مصطلحات موضوعية: Q Science (General), QC Physics

Relation: Azmi, Nor Syafiqah and Mazlan, Muhammad Naim and Taib, Mohd Ikram Md and Ahmad, Mohd Anas and Samsuri, Mohd Shahrul Nizam and Mansor, Marwan and Hisyam, Muhammad Iznul and Abu Bakar, Ahmad Shuhaimi and Zainal, Norzaini (2024) Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate. Materials Science in Semiconductor Processing, 173. p. 108177. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2024.108177 .

الاتاحة: http://eprints.um.edu.my/45724/
https://doi.org/10.1016/j.mssp.2024.108177

المؤلفون: Abu Bakar, Mohamad Aizat, Mohd Asri, Rahil Izzati, Ahmad, Mohd Anas, Krishnan, Ganesan, Pakhuruddin, Mohd Zamir, Mahamd Adikan, Faisal Rafiq, Abdullah, Mundzir

المساهمون: Malaysia Ministry of Higher Education, Universiti Sains Malaysia

المصدر: Journal of Alloys and Compounds ; volume 993, page 174630 ; ISSN 0925-8388

الاتاحة: http://dx.doi.org/10.1016/j.jallcom.2024.174630
https://api.elsevier.com/content/article/PII:S0925838824012179?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0925838824012179?httpAccept=text/plain

المؤلفون: Mohd Hanafiah, Noor Afifa, Hassan, Zainuriah, Foong Lim, Way, Ibrahim, Norasmida, Alias, Ezzah Azimah, Ahmad, Mohd Anas, Atiqah Hamzah, Nur, Mohd Asri, Rahil Izzati

المصدر: Journal of Physics: Conference Series ; volume 1535, issue 1, page 012045 ; ISSN 1742-6588 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/1535/1/012045
https://iopscience.iop.org/article/10.1088/1742-6596/1535/1/012045/pdf
https://iopscience.iop.org/article/10.1088/1742-6596/1535/1/012045

المؤلفون: Yusuf, Yusnizam, Md Taib, Muhamad Ikram, Azmi, Nor Syafiqah, Ahmad, Mohd Anas, Zainal, Norzaini

المصدر: Micro and Nanostructures ; volume 183, page 207671 ; ISSN 2773-0123

الاتاحة: http://dx.doi.org/10.1016/j.micrna.2023.207671
https://api.elsevier.com/content/article/PII:S2773012323001681?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S2773012323001681?httpAccept=text/plain

المؤلفون: Hamzah, Nur Atiqah, Md Sahar, Mohd Ann Amirul Zulffiqal, Tan, Aik Kwan, Ahmad, Mohd Anas, Abdul Malik, Muhammad Fadhirul Izwan, Loo, Chin Chyi, Chang, Wei Sea, Ng, Sha Shiong

المصدر: Microelectronics International ; volume 40, issue 1, page 8-16 ; ISSN 1356-5362 1356-5362

الاتاحة: http://dx.doi.org/10.1108/mi-03-2022-0042
https://www.emerald.com/insight/content/doi/10.1108/MI-03-2022-0042/full/xml
https://www.emerald.com/insight/content/doi/10.1108/MI-03-2022-0042/full/html

المؤلفون: Yusuf, Yusnizam, Samsudin, Muhammad Esmed Alif, Taib, Muhamad Ikram Md, Ahmad, Mohd Anas, Mohamed, Mohamed Fauzi Packeer, Kawarada, Hiroshi, Falina, Shaili, Zainal, Norzaini, Syamsul, Mohd

المصدر: Crystals (2073-4352); Jan2023, Vol. 13 Issue 1, p90, 9p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, GALLIUM nitride, BREAKDOWN voltage, HIGH voltages, JOB descriptions

المؤلفون: Seliman, Muhd Azi Che, Hassan, Zainuriah, Yusof, Ahmad Sauffi, Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Baharin, Mohd Syamsul Nasyriq Samsol

مصطلحات موضوعية: QC1-999 Physics

وصف الملف: application/pdf

Relation: http://eprints.usm.my/49097/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2077.pdf; Seliman, Muhd Azi Che and Hassan, Zainuriah and Yusof, Ahmad Sauffi and Ahmad, Mohd Anas and Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd and Baharin, Mohd Syamsul Nasyriq Samsol (2020) Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

الاتاحة: http://eprints.usm.my/49097/
http://eprints.usm.my/49097/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2077.pdf

المؤلفون: Yusof, Ahmad Sauffi, Hassan, Zainuriah, Hamady, Sidi, Ng, Sha Shiong, Ahmad, Mohd Anas, Way, Foong Lim, Fressengeas, Nicolas, Chevallier, Christyves

مصطلحات موضوعية: QC1-999 Physics

وصف الملف: application/pdf

Relation: http://eprints.usm.my/49065/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2058.pdf; Yusof, Ahmad Sauffi and Hassan, Zainuriah and Hamady, Sidi and Ng, Sha Shiong and Ahmad, Mohd Anas and Way, Foong Lim and Fressengeas, Nicolas and Chevallier, Christyves (2020) The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

الاتاحة: http://eprints.usm.my/49065/
http://eprints.usm.my/49065/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2058.pdf

المؤلفون: Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Ahmad, Mohd Anas, Ng, Sha Shiong, Hassan, Zainuriah

مصطلحات موضوعية: QC1-999 Physics

وصف الملف: application/pdf

Relation: http://eprints.usm.my/49058/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2055.pdf; Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd and Ahmad, Mohd Anas and Ng, Sha Shiong and Hassan, Zainuriah (2020) Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

الاتاحة: http://eprints.usm.my/49058/
http://eprints.usm.my/49058/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2055.pdf

المؤلفون: Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Zainal, Norzaini, Ng, Sha Shiong, Hassan, Zainuriah

مصطلحات موضوعية: QC1-999 Physics

وصف الملف: application/pdf

Relation: http://eprints.usm.my/49054/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2051.pdf; Ahmad, Mohd Anas and Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd and Zainal, Norzaini and Ng, Sha Shiong and Hassan, Zainuriah (2020) Inhomogeneity Of An InGaN Based Blue LED Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT). In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

الاتاحة: http://eprints.usm.my/49054/
http://eprints.usm.my/49054/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2051.pdf

المؤلفون: Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Ng, Sha Shiong, Way, Foong Lim, Khai, Sheen Lau, Alias, Ezzah A., Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd

مصطلحات موضوعية: QC1-999 Physics

وصف الملف: application/pdf

Relation: http://eprints.usm.my/49038/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut.pdf; Sahar, Mohd Ann Amirul Zulffiqal Md and Hassan, Zainuriah and Ng, Sha Shiong and Way, Foong Lim and Khai, Sheen Lau and Alias, Ezzah A. and Ahmad, Mohd Anas and Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd (2020) Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

الاتاحة: http://eprints.usm.my/49038/
http://eprints.usm.my/49038/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut.pdf