نتائج البحث - "ALXGA1-XAS ALLOYS"

1

Report

Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials

المؤلفون: Guo LW, Han YJ, Hu CY, Tan PH, Yang FH, Huang Q, Zhou JM, Guo LW,Chinese Acad Sci,Inst Phys,Ctr Condensed Matter Phys,POB 603,Beijing 100080,Peoples R China.

Relation: PHYSICAL REVIEW B; Guo LW; Han YJ; Hu CY; Tan PH; Yang FH; Huang Q; Zhou JM .Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials ,PHYSICAL REVIEW B,2002,65 (12):Art.No.125325; http://ir.semi.ac.cn/handle/172111/11936

الاتاحة: http://ir.semi.ac.cn/handle/172111/11936

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2

Report

Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size

المؤلفون: Chen Y, Zhang W, Li GH, Zhu ZM, Han HX, Wang ZP, Zhou W, Wang ZG, Chen Y,Acad Sinica,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.

Relation: JOURNAL OF PHYSICS-CONDENSED MATTER; Chen Y; Zhang W; Li GH; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG .Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size ,JOURNAL OF PHYSICS-CONDENSED MATTER,2000,12(13):3173-3180; http://ir.semi.ac.cn/handle/172111/12640

الاتاحة: http://ir.semi.ac.cn/handle/172111/12640

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3

Optical investigation of electrical spin injection into an inverted two-dimensional elctron gas structure

المؤلفون: Martin Oltscher, Mariusz Ciorga, Thomas Kuczmik, Dieter Weiss, Dieter Schuh, Christian Schüller, Christian H. Back, M. Buchner, Tobias Korn, Dominique Bougeard, Josef Loher

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af73327561f29bae9b65943424f90a30
https://epub.uni-regensburg.de/35055/

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4

Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

المؤلفون: A. Meftah, H. Maaref, Meherzi Oueslati, S. Aloulou, H. Ajlani, D. Scalbert, J. Allegre

المساهمون: Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)

المصدر: Journal of Luminescence
Journal of Luminescence, Elsevier, 2008, 128, pp.1317-1322. ⟨10.1016/j.jlumin.2007.12.042⟩

مصطلحات موضوعية: Photoluminescence, DX-CENTER, time-resolved photoluminescence, Biophysics, 02 engineering and technology, Crystal structure, Trapping, DONOR, 01 natural sciences, Biochemistry, Molecular physics, ENERGY-GAP, Condensed Matter::Materials Science, ALXGA1-XAS ALLOYS, DEPENDENCE, Impurity, 0103 physical sciences, Radiative transfer, RADIATIVE LIFETIMES, 010306 general physics, TEMPERATURE, Condensed matter physics, Chemistry, GAAS, Doping, Time constant, AlGaAs/GaAs heterostructures, Heterojunction, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], LUMINESCENCE, GALLIUM ARSENIDE, 0210 nano-technology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76eef7c5cd783825aeed72002776879a
https://doi.org/10.1016/j.jlumin.2007.12.042

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5

Academic Journal

Temperature sensitive photoconductivity observed in InN layers

المؤلفون: Guo, Lei, Wang, Xinqiang, Feng, Li, Zheng, Xiantong, Chen, Guang, Yang, Xuelin, Xu, Fujun, Tang, Ning, Lu, Liwu, Ge, Weikun, Shen, Bo

المساهمون: Guo, L (reprint author), Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China., Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China., Tsinghua Univ, Dept Phys, Beijing 100871, Peoples R China.

المصدر: SCI ; EI

مصطلحات موضوعية: 2-DIMENSIONAL ELECTRON-GAS, PERSISTENT PHOTOCONDUCTIVITY, ALXGA1-XAS ALLOYS, BAND-GAP, SEMICONDUCTORS, STATES, FILMS, GAAS

Relation: APPLIED PHYSICS LETTERS.2013,102,(7).; 835797; http://hdl.handle.net/20.500.11897/148310; WOS:000315596700029

الاتاحة: https://hdl.handle.net/20.500.11897/148310
https://doi.org/10.1063/1.4793190

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6

Academic Journal

Probing the magnetic ground state of the DX- center in Cd1-xMnxTe : in using muon spin relaxation.

المؤلفون: Giblin, S. R., Terry, I., Read, D. E., Hillier, A. D., Becla, P.

المصدر: Physical review B, 2006, Vol.73(5), pp.054421 [Peer Reviewed Journal]

مصطلحات موضوعية: Persistent photoconductivity, ALXGA1-XAS alloys, Deep Donors, GAAS, CDTE, TE, Dynamics, Rotation, Kinetics, ALGAAS

وصف الملف: application/pdf

Relation: dro:1399; http://dro.dur.ac.uk/1399/; http://dx.doi.org/10.1103/PhysRevB.73.054421; http://dro.dur.ac.uk/1399/1/1399.pdf

الاتاحة: http://dro.dur.ac.uk/1399/
http://dro.dur.ac.uk/1399/1/1399.pdf
https://doi.org/10.1103/PhysRevB.73.054421

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7

Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb

المؤلفون: R. Magnanini, Andrea Parisini, C. Ghezzi, Roberto Mosca, E. Gombia, S. Franchi

المصدر: Journal of applied physics 91 (2002): 3215–3020. doi:10.1063/1.1445495
info:cnr-pdr/source/autori:Ghezzi C.1, Magnanini R.1, Parisini A.1, Franchi S.2, Gombia E.2, Mosca R.2/titolo:Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb/doi:10.1063%2F1.1445495/rivista:Journal of applied physics/anno:2002/pagina_da:3215/pagina_a:3020/intervallo_pagine:3215–3020/volume:91

مصطلحات موضوعية: Range (particle radiation), Amplitude, Deep-level transient spectroscopy, Chemistry, Band gap, Impurity, MOLECULAR-BEAM EPITAXY, ALXGA1-XAS ALLOYS, GASB, DONOR STATE, Doping, General Physics and Astronomy, chemistry.chemical_element, Atomic physics, Edge (geometry), Tellurium