المؤلفون: Alexey D. Bolshakov, Alexey M. Mozharov, Georgiy A. Sapunov, Igor V. Shtrom, Nickolay V. Sibirev, Vladimir V. Fedorov, Evgeniy V. Ubyivovk, Maria Tchernycheva, George E. Cirlin, Ivan S. Mukhin

المصدر: Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 146-154 (2018)

مصطلحات موضوعية: A3B5 on Si, epitaxy, GaN, MBE, nanowires, nanotubes, nanotube-like nanostructures, Si, Technology, Chemical technology, TP1-1185, Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2190-4286

URL الوصول: https://doaj.org/article/3e982dbd8ac74bbe95a99adaad31d2a5