المؤلفون: James, Ann Maria, Gicevičius, Mindaugas, Hofer, Sebastian, Schrode, Benedikt, Werzer, Oliver, Devaux, Félix, Geerts, Yves, Sirringhaus, Henning, Resel, Roland

المصدر: Journal of crystal growth, 627

مصطلحات موضوعية: Chimie, A1. Atomic force microscopy, A1. Nucleation, A1. Surface processes, A1. X-ray diffraction, A2. Growth from solutions, A3. Physical vapor deposition, B1. Organic compounds

وصف الملف: 1 full-text file(s): application/pdf

Relation: uri/info:doi/10.1016/j.jcrysgro.2023.127539; uri/info:pii/S0022024823004657; uri/info:scp/85180568609; https://dipot.ulb.ac.be/dspace/bitstream/2013/366935/1/doi_350579.pdf; http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/366935

الاتاحة: http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/366935
https://dipot.ulb.ac.be/dspace/bitstream/2013/366935/1/doi_350579.pdf

المؤلفون: Darkins, Robert, Broad, Alexander, Duffy, Dorothy M, Ford, Ian J

المصدر: Journal of Crystal Growth , Article 126878. (2022)

مصطلحات موضوعية: A1. Growth models, A1. Impurities, A1. Surface processes, A1. Computer simulation, A2. Growth from solutions

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10156192/1/J%20Crystal%20Growth%202022.pdf; https://discovery.ucl.ac.uk/id/eprint/10156192/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10156192/1/J%20Crystal%20Growth%202022.pdf
https://discovery.ucl.ac.uk/id/eprint/10156192/

المؤلفون: Armstrong, R., Coulon, P. M., Bozinakis, P., Martin, R. W., Shields, P. A.

المصدر: Armstrong , R , Coulon , P M , Bozinakis , P , Martin , R W & Shields , P A 2020 , ' Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach ' , Journal of Crystal Growth , vol. 548 , 125824 . https://doi.org/10.1016/j.jcrysgro.2020.125824

مصطلحات موضوعية: A1. Nanostructures, A1. Surface structure, A3. Metalorganic chemical vapor deposition, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds, /dk/atira/pure/subjectarea/asjc/3100/3104, name=Condensed Matter Physics, /dk/atira/pure/subjectarea/asjc/1600/1604, name=Inorganic Chemistry, /dk/atira/pure/subjectarea/asjc/2500/2505, name=Materials Chemistry

وصف الملف: application/pdf

الاتاحة: https://researchportal.bath.ac.uk/en/publications/4c48f45c-6012-4ee3-87e9-9ba44dcc00d9
https://doi.org/10.1016/j.jcrysgro.2020.125824
https://purehost.bath.ac.uk/ws/files/211376021/Creation_of_faceted_AlN_nanostructures_Final_Initial_Submission.pdf
https://purehost.bath.ac.uk/ws/files/211376023/CRYS_D_20_00415R1_Ammended_After_Reviewers_Comments.pdf
http://www.scopus.com/inward/record.url?scp=85089424698&partnerID=8YFLogxK

المؤلفون: Jaroch, T., Chen, Shen, Zdyb, R., Jałochowski, M., Thiel, Patricia A., Tringides, Michael C.

المصدر: Chemistry Publications

مصطلحات موضوعية: A1 Nucleation, A1 Diffusion, A1 Surface, A1 Low dimensional structures, A3 Molecular beam epitaxy, B1 Nanomaterials, Materials Chemistry, Materials Science and Engineering, Nanoscience and Nanotechnology, Physics

وصف الملف: application/pdf

Relation: https://lib.dr.iastate.edu/chem_pubs/1133; https://lib.dr.iastate.edu/cgi/viewcontent.cgi?article=2136&context=chem_pubs

الاتاحة: https://lib.dr.iastate.edu/chem_pubs/1133
https://lib.dr.iastate.edu/cgi/viewcontent.cgi?article=2136&context=chem_pubs

المؤلفون: Hentschel, R., Gärtner, J., Wachowiak, A., Großer, A., Mikolajick, T., Schmult, S.

مصطلحات موضوعية: A3. Molekularstrahlepitaxie, B1. Galliumnitrid, A1. Oberflächenmorphologie, A1. Rasterkraftmikroskopie, B3. AlGaN/GaN-Heterostruktur, A3. Molecular beam epitaxy, B1. Gallium nitride, A1. Surface morphology, A1. Atomic force microscopy, B3. AlGaN/GaN heterostructure, info:eu-repo/classification/ddc/540, ddc:540

Relation: info:eu-repo/grantAgreement/Bundesministerium für Bildung und Forschung/Mikroelektronik. Vertrauenswürdig und nachhaltig. Für Deutschland und Europa/16ES0145K//Entwicklung von Zwei-Schicht dotierten GaN-Substraten und vertikalen Hoch-Volt-Transistoren/ZweiGaN

الاتاحة: https://tud.qucosa.de/id/qucosa%3A81180
https://tud.qucosa.de/api/qucosa%3A81180/attachment/ATT-0/

المؤلفون: Ranguelov, Bogdan, Müller, Pierre, Metois, Jean-Jacques, Stoyanov, Stoyan

المساهمون: Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://amu.hal.science/hal-01784481 ; Journal of Crystal Growth, 2016.

مصطلحات موضوعية: A1 Surface structure, A1 Surface processes, A2 Growth from, vapor, B2 Semiconducting silicon, A1 Growth models, A1 Morphological, stability, [PHYS]Physics [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]

Relation: hal-01784481; https://amu.hal.science/hal-01784481; https://amu.hal.science/hal-01784481/document; https://amu.hal.science/hal-01784481/file/BRanguelov_ECCG5Bologna_manuscriptR2-PM.pdf

الاتاحة: https://amu.hal.science/hal-01784481
https://amu.hal.science/hal-01784481/document
https://amu.hal.science/hal-01784481/file/BRanguelov_ECCG5Bologna_manuscriptR2-PM.pdf

المؤلفون: Abderrafi, K., Ribeiro-Andrade, R., Nicoara, N., Cerqueira, M. F., Gonzalez Debs, M., Limborço, H., Salomé, P. M. P., Gonzalez, J. C., Briones, F., Garcia, J. M., Sadewasser, S.

مصطلحات موضوعية: CuInSe2, molecular beam epitaxy, migration enhanced epitaxy, Semiconducting ternary compounds, Crystal structure, Surface structure, A1: Crystal structure, A1: Surface structure, A3: Migration enhanced epitaxy, A3: Molecular beam epitaxy, B2: Semiconducting ternary compounds, Engenharia e Tecnologia::Engenharia dos Materiais, Science & Technology

وصف الملف: application/pdf

Relation: info:eu-repo/grantAgreement/EC/FP7/327367/EU; http://dx.doi.org/10.1016/j.jcrysgro.2017.07.010; Journal of Crystal Growth 475, pp. 300-306 (2017); http://hdl.handle.net/1822/48546

الاتاحة: http://hdl.handle.net/1822/48546
https://doi.org/10.1016/j.jcrysgro.2017.07.010

المؤلفون: Sadowski, Janusz, Piwowar, Justyna, Bożek, Rafał, Seredyński, Bartłomiej, Pacuski, Wojciech, Suffczyński, Jan

مصطلحات موضوعية: A1. Diffusion, A1. Layers distribution, A1. Surface morphology, A3. Molecular beam epitaxy, B1. Molybdenum ditelluride, B2. Transition metal dichalcogenides

Relation: Journal of Crystal Growth; 126806-1-6; https://repozytorium.uw.edu.pl//handle/item/112847

الاتاحة: https://repozytorium.uw.edu.pl//handle/item/112847
https://doi.org/10.1016/J.JCRYSGRO.2022.126806

المؤلفون: Ohnishi, Kazuki, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

مصطلحات موضوعية: A1. Growth models, A1. Surface kinetics, A3. Hydride vapor phase epitaxy, B1. Nitrides

وصف الملف: application/pdf

Relation: https://doi.org/10.1016/j.jcrysgro.2022.126749; Journal of Crystal Growth; 592; 126749; https://nagoya.repo.nii.ac.jp/record/2004224/files/HVPEGaNBCF_Ohnishv9.pdf

الاتاحة: https://nagoya.repo.nii.ac.jp/record/2004224/files/HVPEGaNBCF_Ohnishv9.pdf

المؤلفون: Nebol'sin, Valery A., Johansson, Jonas, Suyatin, Dmitry B., Spiridonov, Boris A.

المصدر: Journal of Crystal Growth NanoLund: Centre for Nanoscience. 505:52-58

مصطلحات موضوعية: A1. Growth models, A1. Nanostructures, A1. Surface processes, B2. Semiconducting IV materials, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

URL الوصول: https://lup.lub.lu.se/record/d338993c-6044-4b02-9c95-40a828c7f0ab
http://dx.doi.org/10.1016/j.jcrysgro.2018.10.001

المؤلفون: Uwaha, Makio, Sato, Masahide, Kawaguchi, Masashi, Kondo, Shinji

مصطلحات موضوعية: B2. Semiconducting silicon, A3. Physical vapor deposition processes, A1. Surface processes, A1. Morphological instability

الاتاحة: http://hdl.handle.net/2237/20567

المؤلفون: Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano

المصدر: Journal of Crystal Growth. 592:126749

مصطلحات موضوعية: Inorganic Chemistry, History, Polymers and Plastics, A1. Surface kinetics, B1. Nitrides, Materials Chemistry, A3. Hydride vapor phase epitaxy, A1. Growth models, Business and International Management, Condensed Matter Physics, Industrial and Manufacturing Engineering

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c15f7161acebbcba8795d2785f258183
https://doi.org/10.1016/j.jcrysgro.2022.126749

المؤلفون: J.J. Métois, Bogdan Ranguelov, S. Stoyanov, Pierre Müller

المساهمون: Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Muller, Pierre

المصدر: Journal of Crystal Growth
Journal of Crystal Growth, 2017, 457, pp.184-187. ⟨10.1016/j.jcrysgro.2016.06.041⟩
Journal of Crystal Growth, Elsevier, 2017, 457, pp.184-187. ⟨10.1016/j.jcrysgro.2016.06.041⟩
Journal of Crystal Growth, Elsevier, 2016
Journal of Crystal Growth, 2016

مصطلحات موضوعية: Diffusion equation, vapor, 02 engineering and technology, A1 Morphological, Kinetic energy, 01 natural sciences, Electromigration, Instability, [PHYS] Physics [physics], Inorganic Chemistry, Computational chemistry, 0103 physical sciences, Materials Chemistry, B2 Semiconducting silicon, A1 Growth models, A2 Growth from, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, A1 Surface processes, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Surface diffusion, A1 Surface structure, Condensed matter physics, Chemistry, stability, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Critical value, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Reflection (physics), 0210 nano-technology, [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat], Vicinal

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d7a4b03c79ce89d45c40864bf2d7f6a
https://doi.org/10.1016/j.jcrysgro.2016.06.041

المؤلفون: Junshuai Lia, Jinxiao Wanga, Min Yina, Pingqi Gaoa, Deyan Hea, Qiang Chenb, Hajime Shiraib

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://spm.com.cn/papers/1043.pdf.

مصطلحات موضوعية: A1. Atomic force microscopy, A1. Crystal morphology, A1. Surface structure, A3. Inductively coupled plasma CVD, B2. Si films, B3. Field

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.652.7814; http://spm.com.cn/papers/1043.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.652.7814
http://spm.com.cn/papers/1043.pdf

المؤلفون: Muroi Mitsuko, Yamada Ayami, Saito Ayumi, Habuka Hitoshi

مصطلحات موضوعية: A1. Doping, A1. Etching, A1. Surface processes, A3. Chemical vapor deposition processes, B1. Elemental solid, B2. Semiconductor silicon

Relation: https://ynu.repo.nii.ac.jp/?action=repository_uri&item_id=10245; http://hdl.handle.net/10131/00012907; Journal of Crystal Growth, 529, 125301(2020-01); AA00696341; https://ynu.repo.nii.ac.jp/?action=repository_action_common_download&item_id=10245&item_no=1&attribute_id=20&file_no=1

الاتاحة: http://hdl.handle.net/10131/00012907
https://ynu.repo.nii.ac.jp/?action=repository_uri&item_id=10245
https://ynu.repo.nii.ac.jp/?action=repository_action_common_download&item_id=10245&item_no=1&attribute_id=20&file_no=1

المؤلفون: Hartmann, J.M., Abbadie, A., Vinet, M., Clavelier, L., Holliger, P., Lafond, D., Séméria, M., N, Gentile, P.

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

المصدر: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://cea.hal.science/cea-01989757 ; Journal of Crystal Growth, 2003, 257, pp.19-30. ⟨10.1016/s0022-0248(03)01380-0⟩.

مصطلحات موضوعية: A1. Surface preparation, A1. Si growth kinetics, A1. Patterned and SOI wafers, A1. Fullsheet, A3. Reduced pressurechemical vapor deposition, PACS: 81.15.Gh, 81.15.Aa, 68.55.a, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials

الاتاحة: https://cea.hal.science/cea-01989757
https://cea.hal.science/cea-01989757v1/document
https://cea.hal.science/cea-01989757v1/file/JCG-Si%20%281%29.pdf
https://doi.org/10.1016/s0022-0248(03)01380-0

المؤلفون: Pina Martínez, Carlos Manuel, Woensdregt, Cornelis F.

مصطلحات موضوعية: A1. Crystal morphology, A1. Surface structure, A2. Growth from solutions, Cristalografía (Geología)

Time: 548

وصف الملف: application/pdf

Relation: PII: S0022-0248(01)01549-4; http://www.journals.elsevier.com/journal-of-crystal-growth/; https://hdl.handle.net/20.500.14352/57121

الاتاحة: https://hdl.handle.net/20.500.14352/57121
http://www.journals.elsevier.com/journal-of-crystal-growth/

المؤلفون: Y. Q. Wanga, Z. L. Wanga, T. Brownb, A. Brownb, G. Mayb

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://www.nanoscience.gatech.edu/zlwang/paper/2002/02_JCG_1.pdf.

مصطلحات موضوعية: A1. Interfacial intermixing, A1. Surface processes, A1. Thermodynamics of anion exchange, A3. Metalorganic vapor

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.590.3558; http://www.nanoscience.gatech.edu/zlwang/paper/2002/02_JCG_1.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.590.3558
http://www.nanoscience.gatech.edu/zlwang/paper/2002/02_JCG_1.pdf

المؤلفون: Kyeong K. Leea, William A. Doolittlea, Tong-ho Kima, April S. Browna

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://nanoscience.gatech.edu/paper/2001/01_JCG_1.pdf.

مصطلحات موضوعية: A1. Surface structure, A3. Molecular beam epitaxy, B1. Gallium compounds, B1. Sapphire

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.653.7003; http://nanoscience.gatech.edu/paper/2001/01_JCG_1.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.653.7003
http://nanoscience.gatech.edu/paper/2001/01_JCG_1.pdf

المؤلفون: A. W. Rempela, M. G. Worsterb

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://darkwing.uoregon.edu/~rempel/jcg01re.pdf.

مصطلحات موضوعية: A1. Fluid flows, A1. Interfaces, A1. Particle trapping, A1. Premelting, A1. Solidification, A1. Surface processes

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.534.203; http://darkwing.uoregon.edu/~rempel/jcg01re.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.534.203
http://darkwing.uoregon.edu/~rempel/jcg01re.pdf