المؤلفون: Salah Abdo, Khalil As’ham, Ambali Alade Odebowale, Sanjida Akter, Amer Abdulghani, Ibrahim A. M. Al Ani, Haroldo Hattori, Andrey E. Miroshnichenko

المصدر: Applied Sciences, Vol 15, Iss 2, p 970 (2025)

مصطلحات موضوعية: 4H silicon carbide (SiC), tantalum carbide (TaC), near ultraviolet (NUV) photodetector, responsivity, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2076-3417/15/2/970; https://doaj.org/toc/2076-3417

URL الوصول: https://doaj.org/article/a4b9d89d3e954479bbef7d3f7bcb07c6