المؤلفون: Liang Zhao, Weimian Guan, Jiwen Xu, Zhiyuan Sun, Maoda Zhang, Junjie Zhang

المصدر: AIMS Materials Science, Vol 11, Iss 6, Pp 1149-1164 (2024)

مصطلحات موضوعية: nanocrystalline 3c-sic, ductile machinability, twin boundary, diamond cutting, molecular dynamics simulation, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2372-0484

URL الوصول: https://doaj.org/article/ad442048d63f47ed96198cfb454e1b14

المؤلفون: Behzad Jazizadeh, Maksym Myronov

المصدر: Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)

مصطلحات موضوعية: 3C–SiC, MEMS, CVD, Strain, Heteroepitaxy, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/8bc2af9f0d434125b227d7e4b9cf1cd5

المؤلفون: Qu, Yuanju, Jokubavicius, Valdas, 1983, Hoang, Duc Quang, Liu, Xianjie, 1971, Fahlman, Mats, 1967, Ivanov, Ivan Gueorguiev, 1955, Yakimova, Rositsa, 1942, Sun, Jianwu W., 1980

المصدر: ACS Applied Materials and Interfaces. 16(38):50926-50936

مصطلحات موضوعية: cubic silicon carbide(3C-SiC), solar water splitting, solar-to-hydrogenconversion, photovoltage, aging of Ni(OH)(2)

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-207924
https://doi.org/10.1021/acsami.4c11809
https://liu.diva-portal.org/smash/get/diva2:1902521/FULLTEXT01.pdf

المؤلفون: Ryo Kagawa, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

المصدر: Functional Diamond, Vol 4, Iss 1 (2024)

مصطلحات موضوعية: 3c-sic/diamond interface, 3c-sic, thermal boundary conductance, gan-on-diamond structure, thermal, management, surface-activated bonding, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2694-1120

URL الوصول: https://doaj.org/article/161901d6e7624e63aea2a5f90ded52a8

المؤلفون: Xiang Ning, Jiawen Huang, Rumeng Zhang, Dongliang Liu, Jiao Li, Nanxing Wu

المصدر: Scientific Reports, Vol 14, Iss 1, Pp 1-13 (2024)

مصطلحات موضوعية: Nanocrystalline 3C-SiC, Rough friction surface, Molecular dynamics, Subsurface brittleness mechanism, Crystal fracture, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/347553b0770d4510a5f239e6da7f7854

المؤلفون: LIU Haisheng, LIU Malin

المصدر: Yuanzineng kexue jishu, Vol 58, Iss 6, Pp 1356-1363 (2024)

مصطلحات موضوعية: 3c-sic, thermoluminescenc, defect, crystal, Nuclear engineering. Atomic power, TK9001-9401, Nuclear and particle physics. Atomic energy. Radioactivity, QC770-798

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1000-6931

URL الوصول: https://doaj.org/article/1b3b555489024cbc8136a0b7a09886c4

المؤلفون: Thi Lap Tran, Duy Van Nguyen, Hung Nguyen, Thi Phuoc Van Nguyen, Pingan Song, Ravinesh C Deo, Clint Moloney, Viet Dung Dao, Nam‐Trung Nguyen, Toan Dinh

المصدر: Advanced Sensor Research, Vol 3, Iss 8, Pp n/a-n/a (2024)

مصطلحات موضوعية: convolutional neuron network (CNN), cubic silicon carbide (3C‐SiC), long‐term monitoring, respiration rate, thermal flow sensor, Technology (General), T1-995, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2751-1219

URL الوصول: https://doaj.org/article/f1bf2a302e934857b6bd0ee129b213a2

المؤلفون: PENG Shancheng, LI Yiyan, MA Huilei, DU Mingqi, LIU Chuanxin, HE Zhoutong

المصدر: He jishu, Vol 47, Iss 7, Pp 070502--070502- (2024)

مصطلحات موضوعية: 3c-sic, chemical vapor deposition, silicon carbide nanowires, nanowire fracture behavior, ultrasonic tailoring, Nuclear engineering. Atomic power, TK9001-9401

وصف الملف: electronic resource

Relation: http://www.hjs.sinap.ac.cn/thesisDetails#10.11889/j.0253-3219.2024.hjs.47.070502&lang=zh; https://doaj.org/toc/0253-3219

URL الوصول: https://doaj.org/article/54e88ba705e1477193c5107546fe3f54

المؤلفون: Bo Zhu, Dan Zhao, Zhijie Zhang, Yihan Niu, Zhenqiao Zhang, Jiucheng Zhao, Shunbo Wang, Hongwei Zhao

المصدر: Journal of Materials Research and Technology, Vol 28, Iss , Pp 2636-2647 (2024)

مصطلحات موضوعية: 3C-SiC, Deformation behavior, Anisotropy, Nanoindentation, Molecular dynamics, Mining engineering. Metallurgy, TN1-997

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2238785423031423; https://doaj.org/toc/2238-7854

URL الوصول: https://doaj.org/article/01d74ff2a16c43cfb5616b68e62d1c89

المؤلفون: Sergio Sapienza, Luca Belsito, Matteo Ferri, Ivan Elmi, Marcin Zielinski, Francesco La Via, Alberto Roncaglia

المصدر: Proceedings, Vol 97, Iss 1, p 44 (2024)

مصطلحات موضوعية: 3C-SiC, Q-factor, Ti getter, General Works

Relation: https://www.mdpi.com/2504-3900/97/1/44; https://doaj.org/toc/2504-3900; https://doaj.org/article/8597a20d86ac458393faf43cd352ea07

الاتاحة: https://doi.org/10.3390/proceedings2024097044
https://doaj.org/article/8597a20d86ac458393faf43cd352ea07

المؤلفون: MICHAUD, Jean François, PORTAIL, Marc, ALQUIER, Daniel, CERTON, Dominique, DUFOUR, Isabelle

المصدر: crossref

مصطلحات موضوعية: 3C-SiC, MEMS, Microcantilevers, Physical gas detection, Hydrogen sensor, Time-of-flight, Sciences de l'ingénieur [physics]

Relation: oai:crossref.org:10.1016/j.mssp.2023.107986; https://oskar-bordeaux.fr/handle/20.500.12278/186193

الاتاحة: https://oskar-bordeaux.fr/handle/20.500.12278/186193
https://hdl.handle.net/20.500.12278/186193
https://doi.org/10.1016/j.mssp.2023.107986

المؤلفون: Gerard Colston, Kelly Turner, Arne Renz, Kushani Perera, Peter M. Gammon, Marina Antoniou, Vishal A. Shah

المصدر: Materials, Vol 17, Iss 7, p 1587 (2024)

مصطلحات موضوعية: 3C-SiC, epitaxy, compliant substrate, stacking faults, conformal epitaxy, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

Relation: https://www.mdpi.com/1996-1944/17/7/1587; https://doaj.org/toc/1996-1944; https://doaj.org/article/ee2e52b46dff43ce907584505c220bec

الاتاحة: https://doi.org/10.3390/ma17071587
https://doaj.org/article/ee2e52b46dff43ce907584505c220bec

المؤلفون: Jian, Jingxin, Jokubavicius, Valdas, Syväjärvi, Mikael, Yakimova, Rositsa, Sun, Jianwu

المصدر: ACS Nano. 15(3):5502-5512

مصطلحات موضوعية: nanoporous cubic silicon carbide (3C-SiC), photoelectrochemical water splitting, solar-to-hydrogen conversion, anodization, charge-separation efficiency

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-175401
https://liu.diva-portal.org/smash/get/diva2:1548649/FULLTEXT01.pdf

المؤلفون: Li, Hao, Sun, Jianwu

المصدر: ACS Applied Materials and Interfaces. 13(4):5073-5078

مصطلحات موضوعية: photocatalysis, CO2 reduction, 3C-SiC, selectivity, CH4

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-174130
https://liu.diva-portal.org/smash/get/diva2:1537247/FULLTEXT01.pdf

المؤلفون: Mietek Bakowski, Adolf Schöner, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe

المصدر: Journal of Telecommunications and Information Technology, Iss 2 (2023)

مصطلحات موضوعية: vertical MOSFET, 3C-SiC, channel mobility, Telecommunication, TK5101-6720, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://jtit.pl/jtit/article/view/808; https://doaj.org/toc/1509-4553; https://doaj.org/toc/1899-8852

URL الوصول: https://doaj.org/article/dad5163e3c7c49e2bd7efe43f00288cb

المؤلفون: Rasheed, M. N., Maryam, A., Fatima, K., Iqbal, F., Afzal, Muhammad, Syvajarvi, M., Murtaza, H., Zhu, M., Asghar, M.

المصدر: Digest Journal of Nanomaterials and Biostructures. 15(3):963-972

مصطلحات موضوعية: 3C-SiC, Solid-state reaction, Graphene, I-V, XRD, Optical conductivity

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-286196
https://doi.org/10.15251/djnb.2020.153.963

المؤلفون: Portail, Marc, Chenot, Sébastien, Ghorbanzadeh-Bariran, Mahdis, Khazaka, Rami, Nguyen, Luan, Alquier, Daniel, Michaud, Jean François

المساهمون: Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0255-5476.

مصطلحات موضوعية: CMUT transducer epitaxial layer Si(110) 3C-SiC(111) Si selective growth thermal annealing, CMUT transducer, epitaxial layer, Si(110), 3C-SiC(111), Si selective growth, thermal annealing, [SPI]Engineering Sciences [physics]

Relation: hal-03981941; https://univ-tours.hal.science/hal-03981941; https://univ-tours.hal.science/hal-03981941/document; https://univ-tours.hal.science/hal-03981941/file/MSF.1062.94.pdf%3B%20filename%2A%3DUTF-8%27%27MSF.1062.94.pdf

الاتاحة: https://univ-tours.hal.science/hal-03981941
https://univ-tours.hal.science/hal-03981941/document
https://univ-tours.hal.science/hal-03981941/file/MSF.1062.94.pdf%3B%20filename%2A%3DUTF-8%27%27MSF.1062.94.pdf
https://doi.org/10.4028/p-00832x

المؤلفون: Takaya Sugiura, Naoki Takahashi, Ryohei Sakota, Kazunori Matsuda, Nobuhiko Nakano

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 547-553 (2022)

مصطلحات موضوعية: 3C-SiC, aluminum acceptor, device simulation, piezoresistance, temperature, wide band-gap semiconductors, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9830720/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/78be75e8116749b4808f0be0eff7ff76

المؤلفون: Scuderi, Viviana, Zielinksi, Marcin, La Via, Francesco

مصطلحات موضوعية: 3C-SiC, doping, Raman analysis

Relation: https://zenodo.org/communities/sic_nano_for_picogeo; https://zenodo.org/communities/eu; https://doi.org/10.3390/ma16103824; oai:zenodo.org:8070960

الاتاحة: https://doi.org/10.3390/ma16103824

المؤلفون: Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte

المصدر: Materials; Volume 16; Issue 16; Pages: 5638

مصطلحات موضوعية: high-κ, dielectrics, ALD, WBG, 3C-SiC

وصف الملف: application/pdf

Relation: Electronic Materials; https://dx.doi.org/10.3390/ma16165638

الاتاحة: https://doi.org/10.3390/ma16165638