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1Academic Journal
مصطلحات موضوعية: Biophysics, Physiology, Pharmacology, Biotechnology, Sociology, Plant Biology, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Double-Wall MoS 2 Nanotubes, photovoltaic devices, MoS 2 nanotubes, power conversion efficiency, diameter increases, Controllable Photoelectric Properties, flexoelectricity, results show, PCE, TMD nanotubes, bilayer MoS 2, 3.1 nm, flexoelectric effect, collection efficiency, Flexoelectric Effect Transition-met., photoelectric properties, balance principle, band alignment transition, atomic-bond-relaxation theory, 5.2 nm, 7 times, type II
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2Academic Journal
المؤلفون: Manuel Núñez-Martínez (10787220), Sandra Arias (4730988), Emilio Quiñoá (2018485), Ricardo Riguera (1694269), Félix Freire (2018488)
مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Pharmacology, Evolutionary Biology, Sociology, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, adaptive supramolecular interaction, amide, Aligned Silver Nanoparticles, 3.1 nm interparticle distance, 2.8 nm silver nanoparticles, helical polymer, supramolecular adaptive mechanisms, PPA, M helical structures
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3Academic Journal
المؤلفون: Reyhaneh Nazarian (8383551), Eric Lee (71086), Brian Siegel (10290997), Chance Kuo (8383548), Shiv Acharya (819971), Jacob Schmidt (1947868)
مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Biotechnology, Developmental Biology, Cancer, Infectious Diseases, Plant Biology, Space Science, Astronomical and Space Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, nanopore diameter, detection enhancement, mesh size, protein volume, translocation events, frequency-concentration curve, bulk concentration, 5.5 kDa, protein residence time, 3.1 nm, protein concentrations, event times, hydrogel-backed nanopores, protein translocation events, Quantitative Measurements, nanopore interfaced, iterative method
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4Academic Journal
المؤلفون: Gottlob, Heinrich Dieter Bernd, Echtermeyer, T., Osten, H. J., Kurz, Heinrich, Schmidt, M., Mollenhauer, T., Efavi, J. K., Wahlbrink, T., Lemme, Max C., Czernohorsky, M., Bugiel, E., Fissel, A.
المصدر: IEEE electron device letters : EDL 27(10), 814-816 (2006). doi:10.1109/LED.2006.882581
مصطلحات موضوعية: 0.86 nm, 3.1 nm, CMOS integrated circuits, CMOS technology, Capacitance, Dielectric materials, Dielectric substrates, Electrodes, Epitaxial dielectric, Gd2O3, Leakage current, MOS capacitors, Molecular beam epitaxial growth, NiSi, Plasma stability, Silicon, complementary metal oxide semiconductor, dielectric constant, fully silicided (FUSI), gadolinium compounds, gate dielectric stacks, high-, high-k dielectric thin films, leakage currents, metal gate, metal gate electrodes, nickel alloys, permittivity, rare earth oxide, silicon alloys
جغرافية الموضوع: DE
Relation: info:eu-repo/semantics/altIdentifier/issn/0193-8576; info:eu-repo/semantics/altIdentifier/issn/0741-3106; info:eu-repo/semantics/altIdentifier/issn/1558-0563; info:eu-repo/semantics/altIdentifier/wos/WOS:000240925900008; https://publications.rwth-aachen.de/record/154280; https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-032655%22