المؤلفون: Im, Ki-Sik, Reddy, M. Siva Pratap, Caulmilone, Raphaël, Theodorou, Christoforos, Ghibaudo, Gérard, Cristoloveanu, Sorin, Lee, Jung-Hee

المساهمون: Kumoh National Institute of Technology Gyeongsangbuk-do, Kyungpook National University Daegu (KNU), Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), National Research Foundation of Korea Grant funded by the KoreaGovernment (MSIP) under Grant NRF-2018R1A6A1A03025761 andGrant 2013R1A6A3A04057719

المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-02047570 ; IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1243 - 1248. ⟨10.1109/TED.2019.2894806⟩.

مصطلحات موضوعية: 2-D electron gas (2-DEG), AlGaN/GaN, carrier number fluctuation (CNF), correlated mobility fluctuation (CMF), gate-all-around (GAA), low-frequency noise (LFN), nanowire, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON]Engineering Sciences [physics]/Electronics

الاتاحة: https://hal.science/hal-02047570
https://doi.org/10.1109/TED.2019.2894806

المؤلفون: Hodges, Jason, Albahrani, Sayed Ali, Schwantuschke, Dirk, Raay, Friedbert van, Brückner, Peter, Khandelwal, Sourabh

مصطلحات موضوعية: 2-D electron gas (2-DEG), carrier velocity saturation, channel length modulation (CLM), compact model, GaN HEMT, gate charge, TCAD

Time: 667, 621

Relation: IEEE transactions on electron devices; https://publica.fraunhofer.de/handle/publica/260673

الاتاحة: https://publica.fraunhofer.de/handle/publica/260673
https://doi.org/10.1109/TED.2019.2939585

المؤلفون: Christoforos G. Theodorou, Raphael Caulmilone, Sorin Cristoloveanu, M. Siva Pratap Reddy, Ki-Sik Im, Jung-Hee Lee, Gerard Ghibaudo

المساهمون: Kumoh National Institute of Technology, School of Electronics Engineering, Kyungpook National University, Kyungpook National University, Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), National Research Foundation of Korea Grant funded by the KoreaGovernment (MSIP) under Grant NRF-2018R1A6A1A03025761 andGrant 2013R1A6A3A04057719, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (3), pp.1243-1248. ⟨10.1109/TED.2019.2894806⟩

مصطلحات موضوعية: Materials science, 2-D electron gas (2-DEG), Infrasound, carrier number fluctuation (CNF), Nanowire, Gallium nitride, gate-all-around (GAA), 01 natural sciences, Noise (electronics), Gallium arsenide, law.invention, chemistry.chemical_compound, AlGaN/GaN, law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, business.industry, Scattering, Transistor, Wide-bandgap semiconductor, low-frequency noise (LFN), Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, nanowire, Optoelectronics, correlated mobility fluctuation (CMF), business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0342dfe25433b83481482bca2c7a4b75
https://hal.archives-ouvertes.fr/hal-02047570

المؤلفون: Sayed Ali Albahrani, Jason Hodges, Sourabh Khandelwal, Dirk Schwantuschke, Peter Brückner, Friedbert van Raay

المساهمون: Publica

مصطلحات موضوعية: Materials science, 2-D electron gas (2-DEG), gate charge, Spice, Gallium nitride, Hardware_PERFORMANCEANDRELIABILITY, High-electron-mobility transistor, Edge (geometry), 01 natural sciences, Capacitance, chemistry.chemical_compound, Hardware_GENERAL, Electric field, compact model, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, channel length modulation (CLM), carrier velocity saturation, 010302 applied physics, TCAD, business.industry, GaN HEMT, Charge (physics), Electronic, Optical and Magnetic Materials, chemistry, Logic gate, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68808b90f00f6b7b3b52de2e4a2010d5
https://publica.fraunhofer.de/handle/publica/260673

المؤلفون: Young-Ho Bae, Sorin Cristoloveanu, Christoforos G. Theodorou, Jung-Hee Lee, Gerard Ghibaudo, Sindhuri Vodapally, Ki-Sik Im

المساهمون: Kyungpook National University [Daegu], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Uiduk university, Gyeongju

المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (9), pp.3634-3638. ⟨10.1109/TED.2017.2730919⟩

مصطلحات موضوعية: Materials science, G-R noise, 2-D electron gas (2-DEG), Transconductance, Gallium nitride, 02 engineering and technology, 01 natural sciences, Noise (electronics), law.invention, chemistry.chemical_compound, AlGaN/GaN, law, 0103 physical sciences, Wafer, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Condensed matter physics, business.industry, Transistor, Wide-bandgap semiconductor, Electrical engineering, Heterojunction, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, chemistry, 1/fnoise, fin-shaped field-effect transistor (FinFET), 0210 nano-technology, Fermi gas, business, metal-insulator-semiconductor heterostructure field-effect-transistor (MISHFET)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6864ab167367a0b75903288d4f677c19
https://hal.archives-ouvertes.fr/hal-02006996

المؤلفون: Vodapally, Sindhuri, Theodorou, Christoforos, Bae, Youngho, Ghibaudo, Gérard, Cristoloveanu, Sorin, Im, Ki-Sik, Lee, Jung-Hee

المساهمون: Kyungpook National University Daegu (KNU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Uiduk university, Gyeongju

المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-02006996 ; IEEE Transactions on Electron Devices, 2017, 64 (9), pp.3634-3638. ⟨10.1109/TED.2017.2730919⟩.

مصطلحات موضوعية: 1/fnoise, 2-D electron gas (2-DEG), AlGaN/GaN, fin-shaped field-effect transistor (FinFET), G-R noise, metal-insulator-semiconductor heterostructure field-effect-transistor (MISHFET), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-02006996
https://doi.org/10.1109/TED.2017.2730919

المؤلفون: Jawad, Ghassan Nihad, Sloan, R, Missous, Mohamed

المصدر: Jawad , G N , Sloan , R & Missous , M 2015 , ' On the Design of Gyroelectric Resonators and Circulators Using a Magnetically Biased 2-D Electron Gas (2-DEG) ' , I E E E Transactions on Microwave Theory and Techniques , vol. 63 , no. 5 , pp. 1512-1517 . https://doi.org/10.1109/TMTT.2015.2418207

مصطلحات موضوعية: 2-D electron gas (2-DEG) circulator, Gyroelectric disk, perfect circulation conditions

الاتاحة: https://research.manchester.ac.uk/en/publications/2c8404ce-e1a8-4cf3-8a7e-9db8cd806146
https://doi.org/10.1109/TMTT.2015.2418207