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1Dissertation/ Thesis
المؤلفون: 顏辰嘉, Yan, Chen-Jia
المساهمون: 電機資訊學院: 電子工程學研究所, 指導教授: 林浩雄, 顏辰嘉, Yan, Chen-Jia
مصطلحات موضوعية: 金氧半電容元件, 金屬後退火, 銻磷砷化銦, III-V族半導體, metal-oxide-semiconductor capacitor, post metallization annealing, InAsPSb, III-V semiconductors
Time: 86
وصف الملف: 1963440 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/276738; http://ntur.lib.ntu.edu.tw/bitstream/246246/276738/1/ntu-105-R02921012-1.pdf
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2Dissertation/ Thesis
المؤلفون: 薛植函, Hsueh, Chih-Han
المساهمون: 電機資訊學院: 光電工程學研究所, 指導教授: 林浩雄, 薛植函, Hsueh, Chih-Han
مصطلحات موضوعية: 第一原理, 銻磷砷化銦, 雜化泛函, 能隙, 能帶結構, first-principles, InAsPSb, Hybrids functional, band-gap, band-structure
Time: 41
وصف الملف: 1589179 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/272950; http://ntur.lib.ntu.edu.tw/bitstream/246246/272950/1/ntu-105-R03941120-1.pdf
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3Dissertation/ Thesis
المؤلفون: 黃芷琳, Huang, Chih-Ling
المساهمون: 電機資訊學院: 電子工程學研究所, 指導教授: 林浩雄, 黃芷琳, Huang, Chih-Ling
مصطلحات موضوعية: 銻磷砷化銦, 原生氧化層, XPS, valence band spectra, VFF model, InAsPSb, native oxide
Time: 86
وصف الملف: 2639623 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/275991; http://ntur.lib.ntu.edu.tw/bitstream/246246/275991/1/ntu-104-R02943108-1.pdf
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4Dissertation/ Thesis
المؤلفون: 陳冠達, Chen, Kuan-Ta
المساهمون: 臺灣大學: 電子工程學研究所, 林浩雄
وصف الملف: 1524262 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/256681; http://ntur.lib.ntu.edu.tw/bitstream/246246/256681/1/ntu-101-R99943065-1.pdf
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5Dissertation/ Thesis
المؤلفون: 吳承潤, Wu, Chen-Jun
المساهمون: 臺灣大學: 電子工程學研究所, 林浩雄
مصطلحات موضوعية: 分子束磊晶技術, 銻磷砷化銦, 銻磷化銦, 價電帶反交叉模型, 熱焠滅機制, 光偵測器, 價力場模型, molecular beam epitaxy, InAsPSb, InPSb, valence band anticrossing model, thermal quenching, photodetector, valence force field model
وصف الملف: 4457472 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/256674; http://ntur.lib.ntu.edu.tw/bitstream/246246/256674/1/ntu-101-F95943044-1.pdf
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6Dissertation/ Thesis
المؤلفون: 曾健順, Tzeng, Jian-Shum
المساهمون: 臺灣大學: 電子工程學研究所, 林浩雄
مصطلحات موضوعية: 銻磷砷化銦, 縱向聲子模態, 橫向聲子模態, 拉曼光譜, 紅外線反射光譜, InAsPSb, LO phonon, TO phonon, Raman, IR reflection spectra
وصف الملف: 2570358 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/256957; http://ntur.lib.ntu.edu.tw/bitstream/246246/256957/1/ntu-99-R97943087-1.pdf
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7Dissertation/ Thesis
المؤلفون: 羅世為, Lo, Shih-Wei
المساهمون: 臺灣大學: 電子工程學研究所, 林浩雄
مصطلحات موضوعية: 光偵測器, 銻磷砷化銦/砷化銦, 光響應度, 量子效率, 偵測率, photodetectors, InAsPSb/InAs, responsivity, quantum efficiency, detectivity
وصف الملف: 1833382 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/256888; http://ntur.lib.ntu.edu.tw/bitstream/246246/256888/1/ntu-99-R97943094-1.pdf
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8Dissertation/ Thesis
المؤلفون: 藍右任, Lan, You-Ren
المساهمون: 臺灣大學: 光電工程學研究所, 馮哲川
مصطلحات موضوعية: 同步加速器輻射光源, X光吸收光源精細結構頻譜圖, X光光電子能譜術, 氧化鋅鎂, 二氧化鉿, 銻磷砷化銦, Synchrotron Radiation (SR), X-ray absorption fine structure (XAFS), X-ray absorption spectroscopy (XAS), X-ray Photoelectron Spectroscopy (XPS), MgZnO, HfO2, InAsPSb
وصف الملف: 3451259 bytes; application/pdf
Relation: http://ntur.lib.ntu.edu.tw/handle/246246/253690; http://ntur.lib.ntu.edu.tw/bitstream/246246/253690/1/ntu-99-R97941090-1.pdf
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9Dissertation/ Thesis
المؤلفون: 周鈺傑, Chou, Yu-Chieh
المساهمون: 林浩雄, 臺灣大學:電子工程學研究所
مصطلحات موضوعية: MBE, InAsPSb, Mott transition, configuration coordination model, 銻磷砷化銦, Mott轉變, 結構協調模型
وصف الملف: 1079131 bytes; application/pdf
Relation: U0001-1708200917372100; http://ntur.lib.ntu.edu.tw/handle/246246/189217; http://ntur.lib.ntu.edu.tw/bitstream/246246/189217/1/ntu-98-R96943055-1.pdf
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10Dissertation/ Thesis
المؤلفون: 蔡濟印, Tsai, Gene
المساهمون: 林浩雄, Lin, Hao-Hsiung, 臺灣大學:電子工程學研究所
مصطلحات موضوعية: 中紅外線, 銻砷化銦, 銻磷化銦, 銻磷砷化銦, 三五族半導體, 分子束磊晶, Mid-Infrared, Molecular Beam Epitaxy, InAsSb, InPSb, InAsPSb, III-V semiconductor
وصف الملف: 2530357 bytes; application/pdf
Relation: U0001-2707200912413600; http://ntur.lib.ntu.edu.tw/handle/246246/189129; http://ntur.lib.ntu.edu.tw/bitstream/246246/189129/1/ntu-98-D91943023-1.pdf
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11Dissertation/ Thesis
المؤلفون: 吳嘉恩, Wu, Chia-En
المساهمون: 林浩雄, 臺灣大學：電子工程學研究所
مصطلحات موضوعية: 中紅外線, 發光二極體, 銻磷砷化銦, 多重量子井, MIR, InAsPSb, MQW, LED, light emitting diode, mid-infrared
وصف الملف: 1091219 bytes; application/pdf
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Longo, “Liquid phase epitaxtial growth of InAsxSbyP1-x-y layers on InAs,” J. Electron. Mater., vol. 6, pp. 163, 1977. [6]N. Kobayashi, and Y. Horikoshi, “DH Lasers Fabricated by new III-V Semiconductor material InAsPSb,” Jpn. J. Appl. Phys., vol. 19, pp. L641-L644, 1980. [7]A. Krier, “Room-temperature InAsxSbyP1-x-y light-emitting diodes for CO2 detection at 4.2μm,” Appl. Phys. Lett. , vol. 56, pp. 2428-2429, 1990. [8]A. Krier, and M. Fisher, “Comparison of light emission from room temperature light emitting diodes with InAs active regions grown by LPE,” IEE Proc.-Optoelectron, vol. 144, pp. 287-294, 1997. [9]A. Krier, and Y. Mao, “2.5μm light-emitting diodes in InAs0.36Sb0.20P0.44/ InAs for HF detection,” IEE Proc. -Optoelectron, vol. 144, pp. 355-359, 1997. [10]H. H. Gao, A. Krier, V. Sherstnev, and Y. Yakovlev, “InAsSb/ InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature, ” J. Phys. D: Appl. Phys., vol. 32, pp. 1768-1772, 1999. [11]A. Stein., A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Simecek, S. Rushworth, L. Smith, and M. Ravetz, “InAs (P, Sb)/ InAsSb LEDs emitting in the 3-4μm range at room temperature,” 11th International Conference on Indium Phosphide and Related Materials, pp. 95-98, 1999. [12]Minoru Toda, Thomas J. Zamerowski, Ivan Landy, and Ramon U. Martinelli, “Laser Materials for the 0.67μm to 2.5μm Range,” NASA Contractor Report 4050 HDL-CR-86-351-1, 1987. [13]M. Aydaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus, and G. N. Talalakin, “6W InGaAsSb(Gd)/ InAsSbP double-heterostructure diode lasers emitting at λ=3.3μm,” Appl. Phys. Lett., vol. 81, pp. 1166-1167, 2002. [14]M. Yin, A. Krier, S. Krier, R. Jones, and P. Carrington, “Mid-Infrared diode lasers for free space optical communications,” Proc. of SPIE, vol. 6399 , pp. 63990C-1-63990C-6, 2006. [15]R. M. Lin, S. F. Tang, S. C. Lee, “Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy,” IEEE Transactions on electron devices, vol. 44, 1997. [16]H. K. Choi, Long-wavelength infrared semiconductor lasers, John Wiley & sons, 2004. [17]A. Krier, and V. V. Sherstney, “LEDs for formaldehyde detection at 3.6μm,” J. Phys. D: Appl. Phys., vol. 34, pp. 428-432, 2001. [18]S. S. Kizhayev, N. V. Zotova, S. S. Molchanov, B. V. Pushnyi, and Yu. P. Yakovlev, “Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE,” J. Cryst. Growth, vol. 248, pp. 296-300, 2003. [19]B. Matveev, N. Zotova, S. Karandashov, M. Remennyi, N. Llinskaya, N. Stus, V. Shustov, G. Talalakin, and J. Malinen, “InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range,” IEE Proc. –Optoelectron, vol. 145, pp. 254-256, 1998. [20]A. A. Popov, M. V. Stepanov, V. V. Sherstney, and Yu. P. Yakovlev, “InAsSb light-emitting diodes for the detection of CO2(λ=4.3μm),” Tech. Phys. Lett., vol. 24, pp. 596-598, 1998. [21]N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova, and Yu. P. Yakovlev, “Long-wavelength light-emitting diodes(λ=3.4-3.9μm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy,” Semicond., vol.34, 2000. [22]X. Y. Gong, H. Kan, T. Makino, T. Lida, K. Watanabe, Y. Z. Gao, M. Aoyama, N. L. Rowell , and T. Yamaguchi, “Room-temperature mid-infrared light-emitting diodes from liquid-phase epitaxial InAs/ InAs0.89Sb0.11/ InAs0.80P0.12Sb0.08 heterostructures,” Jpn. J. Appl. Phys., vol. 39, pp. 5039-5043, 2000. [23]E. M. Lysczek, S. E. Mohney, and T. N. Wittberg, “Shallow ohmic contacts to p-type InAs,” Electronics Letters 11th Dec. 2003, vol.39, pp. 1866-1867, 2003. [24]A. R. Clawson, “Guide to references on III-V semiconductor chemical etching,” Mater. Sci. Eng., vol.31, pp. 1-438, 2000. [25]A. Krier, V. V. Sherstnev, Z. Labadi, S. E. Krier, and H. H. Gao, “Interface electroluminescence from InAs Quantum well LEDs grown by rapid slider liquid phase epitaxy, ” J. Phys. D: Appl. Phys., vol.33, pp. 3156-3160, 2000. [26]M. Aidaraliev, N. V. Zotova, N. D. Llinskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus, and G. N. Talalakin, “InAs and InAsSb LEDs with built-in cavities,” Semicond. Sci. Technol., vol. 18, pp. 269- 272. 2003. [27]A. Krier and V V Sherstnev, ”Powerful interface light emitting diodes for methane gas detection,” J. Phys. D: Appl. Phys., vol. 33, pp.101-106, 2000. [28]A. Krier and V V Sherstnev, H H Gao, “A novel LED module for the detection of H2S at 3.8μm,” J. Phys. D: Appl. Phys., vol. 33, pp. 1656- 1661, 2000. [29]S. M. Sze, Physics of semiconductor devices, John Wiley & sons, 1983. [30]S. J. Sweeney, A. F. Phillips, A. R. Adams, E. P. O’Reilly, and P. J. A. Thijis, “The effect of temperature dependent process on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers,” IEEE Photon. Tech. Lett., vol. 10, pp.1076-1078, 1998. [31]A. F. Philips, S. J. Sweeny, A. R. Adams, and P. J. A. Thijis, “The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers”, IEEE J. Select. Topic Quantum Electron., vol.5, pp.401-412, 1999.; zh-TW; http://ntur.lib.ntu.edu.tw/handle/246246/57679; http://ntur.lib.ntu.edu.tw/bitstream/246246/57679/1/ntu-96-R94943125-1.pdf