المؤلفون: 郑旭

مصطلحات موضوعية: 热泳, 自热泳, 温度梯度, Soret效应, 活性颗粒

Relation: 第十三届全国流体力学学术会议摘要集（下）; http://dspace.imech.ac.cn/handle/311007/97915

الاتاحة: http://dspace.imech.ac.cn/handle/311007/97915

المؤلفون: 黄骁, 李水荣, 浦云川, 王夺, 叶跃元, 刘运权

مصطلحات موضوعية: 车载制氢, 甲醇, 自热式重整, 铜锌铝催化剂, 稳定性

Relation: 现代化工,2018,38(11):115-120; https://dspace.xmu.edu.cn/handle/2288/173057

الاتاحة: https://doi.org/10.16606/j.cnki.issn0253-4320.2018.11.025
https://dspace.xmu.edu.cn/handle/2288/173057

المؤلفون: 王玉玊

المساهمون: 北京大学中文系

المصدر: 万方 ; 知网 ; CSSCI ; http://d.g.wanfangdata.com.cn/Periodical_nfwt201602016.aspx

مصطلحات موضوعية: 琅琊, 梅长, 腐女, 兄弟情, 自热, 大统领, 主创, 百度知道, 为高, 文学城

Relation: 南方文坛.2016,(2),66-68.; 1494275; http://hdl.handle.net/20.500.11897/452030

الاتاحة: https://hdl.handle.net/20.500.11897/452030
https://doi.org/10.3969/j.issn.1003-7772.2016.02.016

المؤلفون: 冯慧, 安霞, 杨东, 谭斐, 黄良喜, 武唯康, 张兴, 黄如

المساهمون: 北京大学微电子研究所

المصدر: 知网

مصطلحات موضوعية: 自热效应, 热载流子注入效应, 热电阻, 寿命预测, SOI

Relation: 中国科学:信息科学.2014,(07),912-919.; 808879; http://hdl.handle.net/20.500.11897/174278

الاتاحة: https://hdl.handle.net/20.500.11897/174278

المؤلفون: 张洁天, 贾宏博, 任磊

المساهمون: 北京大学,物理学院,北京,100871

المصدر: 知网 ; 万方 ; http://d.g.wanfangdata.com.cn/Periodical_cgqjs200212005.aspx

مصطلحات موضوعية: 铂电阻 温度传感器 自热效应 散热系数

Relation: 传感器技术.2002,21,(12),13-14,17.; 855243; http://hdl.handle.net/20.500.11897/228595

الاتاحة: https://hdl.handle.net/20.500.11897/228595
https://doi.org/10.3969/j.issn.1000-9787.2002.12.005

المؤلفون: 杨勇, 王铁军, 定明月, 李宇萍, 马隆龙

مصطلحات موضوعية: 生物质燃气, 自热重整, 积碳, 吉布斯自由能, 热力学分析

Relation: 化学工程; http://ir.giec.ac.cn/handle/344007/31051

الاتاحة: http://ir.giec.ac.cn/handle/344007/31051

مصطلحات موضوعية: 生物质燃气, 自热重整, 积碳, 吉布斯自由能, 热力学分析

Relation: 化学工程; http://ir.giec.ac.cn/handle/344007/28797

الاتاحة: http://ir.giec.ac.cn/handle/344007/28797

المؤلفون: 陳芸慈, Chen, Yun-Tsz

المساهمون: 淡江大學化學工程與材料工程學系碩士班, 張煖, Chang, Hsuan

مصطلحات موضوعية: 薄膜反應器, 混合薄膜反應器, 乙烷加氧脫氫, 甲烷自熱蒸氣重組遺傳演算法, 多目標最佳化, Membrane Reactor, Mixed Membrane Reactor, Oxydehydrogenation of Ethane, Autothermal Reforming of Methane, Genetic Algorithm, Multiobjective optimization

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Relation: Ahchieva, D., M. Peglow, S. Heinrich, L. Mörl, T. Wolff, F. Klose, Oxidative dehydrogenation of ethane in a fluidized bed membrane reactor, Applied Catalysis A: General, 296, 176-185, 2005. Basile, A., L. Paturzo, F. Lagan, The partial oxidation of methane to syngas in a palladium membrane reactor: Simulation and experimental studies, Catalysis Today, 67(1-3), 65-75. 2001. Cavani, F., N. Ballarini, A. Cericola, Oxidative dehydrogenation of ethane and propane: How far from commercial implementation, Catalysis Today, 127, 113-131, 2007. Coronas, J., M. Menéndez, J. Santamaría, Use of a ceramic membrane reactor for the oxidative dehydrogenation of ethane to ethylene and higher hydrocarbons, Industrial & Engineering Chemistry Research, 34, 4229-4234, 1995. De Groote, A. M., G. F. Froment, Simulation of the catalytic partial oxidation of methane to synthesis gas, Applied Catalysis A:General, 138(2), 245-264, 1996. Deb, K., A. Patap, S. Agarwal, T. Meyarivan, A Fast and Elitist Multiobjective Genetic Algorithm: NSGA-II, IEEE. Tran. Evol. Comput., 6, 182-197, 2002. Freni, S., G. Calogero, S. Cavallaro, Hydrogen production from methane through catalytic partial oxidation reactions, Journal of Power Sources, 87(1), 28-38. 2000. Froment, G.F., K.B. Bischoff, J.D. Wilde, Chemical reactor analysis and design, Wiley, Toronto, Canada, 2011. Haryanto, A., S. Fernando, N. Murali, S. Adhikari, Current status of hydrogen production techniques by steam reforming of ethanol: A review, Energy and Fuels, 19(5), 2098-2106, 2005. Heracleous, E., A.A. Lemonidou, Ni-Nb-O Mixed Oxides as Highly Active and Selective Catalysts for Ethene Production via Ethane Oxidative Dehydrogenation. Part I: Characterization and Catalytic Performance, Journal of Catalysis, 237, 162, 2006a. Heracleous, E., A.A. Lemonidou, Ni-Nb-O mixed oxides as highly active and selective catalysts for ethane production via ethane oxidative dehydrogenation. Part II: Mechanistic aspects and kinetic modeling, Journal of Catalysis, 237, 175, 2006b. Holland, J. H., Adaptation in Natural and ArtificialSystems, University of Michigan Press, 1975. Inamdar, S. V., S. K. Gupta, D. N. Saaf, MULTI-OBJECTIVE OPTIMIZATION OF AN INDUSTRIAL CRUDE DISTILLATION UNIT USING THE ELITIST NONDOMINATED SORTING GENETIC ALGORITHM, Chem. Eng. Res. Des., 82, 611-623, 2004. Ji, P., W. Feng, H. J. Van Der Kooi, J. De Swaan Arons, Comparison of three integrated catalytic partial oxidation (CPO) processes producing H2 for fuel cell application, Industrial and Engineering Chemistry Research, 43(9), 2005-2016, 2004. Ji, P., H. J. van der Kooi, J. De Swaan Arons, Simulation and thermodynamic analysis of an integrated process with H2 membrane CPO reactor for pure H2 production, Chemical Engineering Science, 58(17), 3901-3911, 2003. Jin, W., X. Gu, S. Li, P. Huang, N. Xu, J. Shi, Experimental and simulation study on a catalyst packed tubular dense membrane reactor for partial oxidation of methane to syngas, Chemical Engineering Science, 55(14), 2617-2625, 2000. Julbe, A., D. Farrusseng, D. Cot, C. Guizard, The chemical valve membrane: a new concept for an auto-regulation of O2 distribution in membrane reactors, Catalysis Today, 67, 139-149, 2001. Kameyama, T., M. Dokiya, M. Fujishige, H. Yokokawa and K. Fikuda, Possibility for Effect Production of Hydrogen from Hydrogen Sulfide by means of a Porous Vycor Glass Membrane, Ind. Eng. Chem. Fund., 20, 97-99, 1981. Kasat, B. R., D. Kunzru, D. N. Saraf, S. K. Gupta, Multiobjective Optimization of Industrial FCC Units Using Eltist Nondominated Sorting Genetic Algorithm, Ind. Eng. Chem. Res., 41, 4765-4776, 2002. Mason, E.A., A.P. Malinauskas, Gas transport in porous media: The dusty gas model, Elsevier, Amsterdam, 1983. Marcano, J. G. S., T. T. Tsotsis, Catalytic membranes and membrane reactors, Wiley-VCH Verlag GmbH, 2002. Mulder, M., Basic principles of membrane technology, Kluwer Acad. Publ., Dordrecht, The Netherlands, 1991. Ostrowski, T., A. Giroir-Fendler, C. Mirodatos, L. Mleczko, Comparative study of the catalytic partial oxidation of methane to synthesis gas in fixed-bed and fluidized-bed membrane reactors Part I: A modeling approach, Catalysis Today, 40(2-3), 181-190, 1998. Rajesh, K.M., G. Gowda, R. M. Mendon, Primary productivity of the brackishwater impoundments along Nethravathi estuary, Mangalore in relation to some physico-chemical parameters, Fish. Technology, 39, 85-87, 2002. Rodríguez, M.L., D.E. Ardissone, E.L. Opez, M.N. Pedernera, D.O. Borio, Reactor designs for ethylene production via ethane oxidative dehydrogenation: Comparison of performance, Industrial and Engineering Chemistry Research, 50, 2690-2697, 2011. Rodríguez, M.L., M.N. Pedernera, D.O. Borio, Two dimensional modeling of a membrane reactor for ATR of methane, Industrial and Catalysis Today, 193, 137-144, 2012. Rosen, M. A., Thermodynamic investigation of hydrogen production by steam-methane reforming, International Journal of Hydrogen Energy, 16(3), 207-217. 1991. Shinji, O., M. Misono, Y. Yoneda, Bull. Chem. Soc. Japan, 55, 2760, 1982. Srinivas, N., K. Deb, Multiobjective function optimization using nondominated sorting genetic algorithms, Evolutionary Computation Journal, 2(3), 221-248, 1995. Tarafder, A., B. C. S. Lee, A. K. Ray, G. P. Rangaiah, Multiobjective Optimization of an Industrial Ethylene Reactor Using a Nondominated Sorting Genetic Algorithm, Ind. Eng. Chem. Res., 44, 124-141, 2005. Xu, J.G.F. Froment, Methane Steam Reforming, Methanation and Water-Gas Shift: I. Intrinsic Kinetics, AIChE J., 35, 88-96, 1989.; U0002-0808201611071000; http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/111319; http://tkuir.lib.tku.edu.tw:8080/dspace/bitstream/987654321/111319/1/index.html

الاتاحة: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/111319
http://tkuir.lib.tku.edu.tw:8080/dspace/bitstream/987654321/111319/1/index.html

المؤلفون: 韩雪

المساهمون: 贺泓

مصطلحات موضوعية: 铑催化剂, 铈镧固溶体, 铜铈复合氧化物, 生物乙醇, 自热重整, Rhodium Catalyst, Cerium-lanthanum Solid Solution, Copper-cerium Mixed Oxide, Bio-ethanol, Auto-thermal Reforming

Relation: 韩雪.低温乙醇自热重整制氢催化剂研究[博士].北京.中国科学院研究生院.2013; http://ir.rcees.ac.cn/handle/311016/7588

الاتاحة: http://ir.rcees.ac.cn/handle/311016/7588

المؤلفون: 韩雪,余运波,贺泓等

مصطلحات موضوعية: 乙醇制氢, 自热重整, 铜铈复合氧化物, 低温, 共沉淀

Relation: 韩雪,余运波,贺泓等. 铜铈复合氧化物催化乙醇自热重整制氢[C]. 见:第十六届全国催化学术会议. 中国辽宁沈阳. 2012-10-15.; http://ir.rcees.ac.cn/handle/311016/32126

الاتاحة: http://ir.rcees.ac.cn/handle/311016/32126

المؤلفون: 吉敏

المساهمون: 北京大学

المصدر: 万方 ; http://d.g.wanfangdata.com.cn/Thesis_Y1609267.aspx

مصطلحات موضوعية: 集成电路, 芯片设计, 纳米尺度, 自热效应

Relation: 北京大学.; 729003; http://hdl.handle.net/20.500.11897/366418

الاتاحة: https://hdl.handle.net/20.500.11897/366418

المؤلفون: 曾建源, Chien-Yuen Tseng

المساهمون: 黃智方, Chih-Fang Hunag

مصطلحات موضوعية: 碳化矽, 雙載子電晶體, 電流增益, 自熱效應, SPICE, SiC, BJT, Current gain, Self-heating

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Relation: [1] R. Singh, J. A. Cooper, Jr., M. R. Melloch, T. P. Chow, and J. W. Palmour, “SiC Power Schottky and PiN Diodes,” IEEE Trans. Electron Devices, vol. 49, no. 4, Apr. 2002. [2] C. E. Weitzel, J. W. Palmour, C. H. Carter, Jr., K. Moore, K. J. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, “Silicon Carbide High-Power Devices,” IEEE Trans. Electron Devices, vol. 43, no. 10, Oct. 1996, pp. 1732-1741. [3] J. Richmond, S. H. Ryu, M. Das, S. Krishnaswami, S. Hodge Jr., A. Agarwal and J. Palmour, ”An Overview of Cree Silicon Carbide Power Devices,” Presented at 8th Workshop on Power Electronics in Transportation(WPET 2004), Sheraton Detroit Novi, Michign, USA , pp 37-42, Oct. 2004. [4] J. Millán, P. Godign on, and D. Tournier, “Recent Development in SiC Power Devices and Related Technology,” Proc. 24th International Conference on Microelectronics (MIEL 2004), Serbia and Montenegro, Vol. 1, NIS, pp. 16-19, 2004. [5] A. R. Powell and L. B. Rowland, “SiC Material-Progress Status and Potential Roadblocks,” IEEE Proc., vol. 60, pp. 942-955, 2002. [6] H. S. Lee, “High Power Bipolar Junction Transistors in Silicon Carbide,” ISRN KTH/EKT/FR-2005/6-SE. [7] J. Bardeen and W. H. Brattain, “The transistor, a semiconductor triode,” Phys. Rev., vol.75, pp. 1208-1225, Apr. 1949. [8] W. Shockley, “The theory of p-n junctions in semiconductors and p-n junction transistors,” Bell Syst. Tech. J., vol. 28, pp. 435-489, July 1949. [9] P.A. Ivanov, M.E. Levinshtein, A. Agarwal, S. Krishnaswami, and J. Palmour, “Analysis of the effect of temperature on base current gain in power 4H-SiC BJTs,” Materials Science Forum, Vols. 527-529 2006 pp. 1441-1444 [10] M. Domeij, E. Danielsson, W. Liu, U. Zimmermann, C-M. Zetterling, and M. Ostling, “Measurements and simulations of self-heating and switching with 4H-SIC power BJTs,” in IEEE ISPSD’2003, 2003, pp.375-378. [11] B. J. Baliga, Power Semiconductor Devices. Boston, MA:PWS,1996. [12] A. Elasser, M. Ghezzo, N. Krishnamurthy, J. Kretchmer, A. W. Clock, D. M. Brown, and T. P. Chow, “Switching characteristics of silicon carbide power PIN diodes,” Solid-State Electron, vol. 44, no. 2, pp. 317-323, Feb. 2000. [13] J. Wang, and B.W. Williams, “4H-SiC npn power bipolar junction transistor,” Semiconductor Science and Technology, vol. 14, no. 12, pp. 1088-1097, Dec. 1999. [14] M. Roschke, and F. Schwierz, “Electron Mobility Models for 4H, 6H, and 3C SiC,” IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1442-1447, July 2001. [15] X. Li, Y. Luo, L. Fursin, J.H. Zhao, M. Pan, P. Alexandrov, and M. Weiner, “On the temperature coefficient of 4H-SiC BJT current gain,” Solid-State Electronics, vol. 47, no. 2, pp. 233-239, Feb. 2003. [16] M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. vol. 22, no. 3, pp. 2842-2854, Sep. 1980. [17] D. Morelli, J. Hermans, C. Beetz, W.S. Woo, G.L. Harris, and C. Taylor, Silicon Carbide and Related Materials Eds. Spencer, M.G., et al., Institute of Physics Conference Series N137, pp. 313-316, 1993. [18] S. Ryu, A. K. Agarwal, R. Singh, and J.W. Palmour, “1800 V npn bipolar junction transistors in 4H-SiC,” IEEE Electron. Device Lett., vol. 22, no. 3, pp. 124–126, Mar. 2001. [19] C. Huang, and J. A. Cooper Jr., “4H-SiC bipolar junction transistors with BVCEO>3,200V,” in Proc. ISPSD, pp. 57-60, 2002. [20] Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, Sumi Krishnaswami, and John W. Palmour, “Temperature dependence of the current gain in power 4H-SiC NPN BJTs,” IEEE Transactions on Electron Devices, vol. 53, no. 5, pp. 1245-1249, May. 2006. [21] “Medici user’s manual, version 2003.6,” Synopsys, Inc., 2003. [22] H. K. Gummel, and H. C. Poon, “An integrated charge control model of bipolar transistors,” Bell Syst. Tech. J., vol. 49, pp. 827-852, 1970. [23] A.Vladimirescu, Kaihe Zhang, A.R.Newton, D.O.Pederson, and A.Sangiovanni-Vincentelli, “SPICE Version 2G User’s Guide,” Department of Electrical Engineering and Computer Sciences University of California Berkeley, Ca., 94720, Aug. 1981. [24] William Liu, “Handbook of III-V Heterojunction Bipolar Transistors, ” John Wiley & Sons, pp. 1088-1090, 1998.; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/31843

الاتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/31843

المؤلفون: 汪丛伟, 阴秀丽, 吴创之, 马隆龙, 周肇秋

مصطلحات موضوعية: 清洁能源, 生物质制氢, 生物油, 自热重整制氢, 热力学模拟

Relation: 第八届全国氢能学术会议论文集; 第八届全国氢能学术会议; 汪丛伟;阴秀丽;吴创之;马隆龙;周肇秋.生物油自热重整制氢反应的热力学模拟.见：.第八届全国氢能学术会议论文集,西安,2007; http://ir.giec.ac.cn/handle/344007/7340

الاتاحة: http://ir.giec.ac.cn/handle/344007/7340

المؤلفون: 李德章, Lee, De-Chang

المساهمون: 黃惠良, 冉曉雯, Hwang, Huey-Liang, Zan, Hsiao-Wen

مصطلحات موضوعية: 低溫多晶矽, 自熱效應, LTPS, poly-si, self-heating

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Relation: [1]A. G. Lewis, I-W. Wu, T. Y. Huang, A. Chiang, and R. H. Bruce, “Active matrix liquid crystal display design using low and high temperature processed polysilicon TFTs,’’ in IEDM Tech. Dig., 1990,pp.843-846 [2]Y. Matsueda, M. Ashizawa, S. Aruga, H. Ohshima, and S. Morozumi, “New technologies for compact TFT LCDs with high-aperture ratio, ’’soc. Information Display, Tech. Dig., pp, 315-318, 1990. [3]R. G. Stewart, S. N. Lee, A. G. Ipri, D. L. Jose, D. A. furst, S. A. Lipp, and W. R. Roach, “A 9V polysilicon LCD with integrated gray-scale drivers,” soc. Information Display, Tech. Dig., pp, 319-322, 1990. [4]T. Yamanaka, T. Hashimoto, N. Hasegawa, T. Tanaka, N. Hashimoto, A. Shimizu, N. Ohki, K. Ishibashi, K. Sasaki, T.Nishida, T. Mine, E. Takeda, and T. Nagano, ”Advanced TFT SRAM Cell Technology Using a Phase-Shift Lithography,’’ IEEE Trans. Electron Devices, Vol. 42, No. 7, pp.1305-1313, 1995. [5]S. D. S. Malhi, H. Shichijio, S.K. Banerjee, R. Sundaresan, M. Elahy, G. P. Polack, W. F. Richardaon, A. h. Shah, L. R. Hite, R. H. Womoack, P. K. Chatterjee, and H. W. Lan, “Characteristics and Three-Dimenssional Integration of MOSFETs in Small-Grain LPCVD Polycrystalline Silicon,’’ IEEE Trans. Electric Devices, Vol.32, No.2, pp.258-281, 1985. [6]K. YoShizaki, H. Takahashi, Y. Kamigaki, T.Yasui, K. Komori, and H. Katto, ISSCC Digest of tech. Papers, p.166, February 1985. [7]N. D. Young, G. Harkin, R. M. Bunn, D. J. McCullloch, and I.D. French, “The Fabrication and Characteristization of EEPROM Arrays on Glass Using a Low-Temperature Poly-Si TFT Process,’’ IEEE Trans. Electron Devices, Vol. 43, NO.11, pp.1930-1936, 1996. [8]T. Kaneko, Y. Hosokawa, M. Tadauchi, Y. Kita, and H. Andoh, “400 dpi Integrated Contact Type Linear Image Sensors with poly-Si TFT’s Analog Readout Circuits and Dynamics shift Registers,” IEEE Trans. Electron Devices, Vol.38, No.5 ,pp.1086-1039,1991. [9]Y. Hayashi, H. Hayashi, M. Negishi, T. Matsushita, “A Thermal Printer Head with Cmos Thin-Film Transistors and Heating Elements Integrated on a Chip,’’ IEEE Solid-State Circuits Conference (ISSCC), p.266, 1998. [10]N. Yamauhchi, Y. Inaba, and M. Okamamura, “An Integrated Photodector-Amplifier using a-Si p-i-n Photodiodes and Poly-Si Thin Film Transistors, ’’ IEEE Photonic Tech. Lett., Vol.5, p.319, 1993. [11]M. G. Clark, “Current Status and Future Propects of Poly-Si,’’ IEEE proc. Circuits Devices Syst., Vol. 141, No.1, p3.3, 1994. [12]K. Nakazawa, J. Appl. Phys., 69(3), p.1703, 1992. [13]Mark D. Jacunski, Michael S. Shur, IEEE Trans. On Electron Devices, p.1146, 1999 [14]M. Koyanagi, Tamio Shimatani, IEDM, 5.2.1, 1993 [15]Tamio Shimatani, Jpn. J. Appl. Phys. 33 (1994) p.619-622 [16]Satoshi Inoue, IEDM, 20.4.1, 1997 [17]Satoshi Inoue, Jpn. J. Appl. Phys. Vol.41(2002) pp.6313-6319 [18]Satoshi Inoue, Jpn. J. Appl. Phys. Vol.42(2003) pp.4213-4217 [19]Ching-Wei Lin, Jpn. J. Appl. Phys. Vol.41(2002) pp.5517-5522 [20]P.-S. 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