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1
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2Report
مصطلحات موضوعية: 半导体材料
Relation: 物理; 杨春雷;王建农;葛惟锟;崔利杰;曾一平.自旋光电流与电流诱导的电子自旋极化——半导体自旋电子学的新进展,物理,2007,36(1):7-10; http://ir.semi.ac.cn/handle/172111/16387
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3Report
مصطلحات موضوعية: 半导体材料
Relation: 物理学报; 罗向东;边历峰;徐仲英;罗海林;王玉琦;王建农;葛惟琨.GaAs_(1-x)Sb_x/GaAs单量子阱的光学特性研究,物理学报,2003,52(7):1761-1765; http://ir.semi.ac.cn/handle/172111/17565
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4Report
مصطلحات موضوعية: 半导体材料
Relation: 固体电子学研究与进展; 李国华;方再利;丁琨;韩和相;曾美思;王建农;葛惟锟;潘钟;李联合;吴荣汉.GaNAs/GaAs量子阱的静压光致发光研究,固体电子学研究与进展,2002,22(4):399-403; http://ir.semi.ac.cn/handle/172111/17931
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5Report
مصطلحات موضوعية: 半导体材料
Relation: 半导体学报; 吕振东;徐仲英;郑宝真;许继宗;王玉琦;王建农;葛惟锟.InAs/GaAs自组织生长量子点结构中浸润层光致发光研究,半导体学报,1997,18(8):631; http://ir.semi.ac.cn/handle/172111/19477
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6Report
مصطلحات موضوعية: 半导体材料
Relation: 半导体学报; 吕振东;杨小平;袁之良;徐仲英;郑宝真;许继宗;陈弘;黄绮;周均铭;王建农;王玉琦;葛惟昆.自组织生长InAs量子点发光的温度特性,半导体学报,1996,17(10):793; http://ir.semi.ac.cn/handle/172111/19671
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7Academic Journal
المساهمون: 中国中医科学院中医临床基础医学研究所,北京,100700, 中国中医科学院西苑医院,北京,100091, 湖南中医药大学,湖南长沙,410208, 北京大学第三医院,北京,100191
المصدر: PubMed ; 万方 ; http://d.g.wanfangdata.com.cn/Periodical_zgzyzz201318006.aspx
مصطلحات موضوعية: 中药, 群体药代动力学, 专家共识, Chinese medicine, population pharmacokinetics, expert consensus
Relation: 中国中药杂志.2013,38,(18),2937-2942.; 655873; http://hdl.handle.net/20.500.11897/342727
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8Academic Journal
المساهمون: 中国中医科学院西苑医院, 北京大学首钢医院
المصدر: 知网
Relation: 中医药管理杂志.2013,(03),235-238.; 1109097; http://hdl.handle.net/20.500.11897/264022
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9Academic Journal
Alternate Title: Research and application of quality standard for standard decoction of Chrysanthemi Flos. (English)
المصدر: China Journal of Chinese Materia Medica; Jul2018, Vol. 43 Issue 13, p2720-2725, 6p
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10
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11Academic Journal
المساهمون: 全国高等学校学生信息咨询与就业指导中心, 浙江大学就业指导与服务中心, 湖北省高校毕业生就业指导服务中心, 北京大学就业指导服务中心, 清华大学就业指导中心, 首都师范大学就业指导中心
المصدر: 知网
Relation: 中国大学生就业.2010,(S3),2-6.; 1013773; http://hdl.handle.net/20.500.11897/256452
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12Academic Journal
مصطلحات موضوعية: GaMnAs, Reflectance spectrum, Hole density, Refractive index, 反射光譜, 空穴濃度, 折射率
Relation: http://repository.ust.hk/ir/Record/1783.1-46244; 物理学报=Acta physica Sinica, v. 2008, (8), August 2008, p. 5277-5283; https://doi.org/10.7498/aps.57.5277; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=57&rft.issue=8&rft.date=2008&rft.spage=5277&rft.epage=5283&rft.aulast=Luo Xiang-Dong&rft.aufirst=&rft.atitle=Low+energy+oscillatory+phenomena+in+photoreflectance+and+photo-modulation+reflectance+spectra+of+GaMnAs+films+grown+by+low+temperature+molecular-beam+epitaxy; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000258602600097; http://www.scopus.com/record/display.url?eid=2-s2.0-51649120878&origin=inward
الاتاحة: http://repository.ust.hk/ir/Record/1783.1-46244
https://doi.org/10.7498/aps.57.5277
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=57&rft.issue=8&rft.date=2008&rft.spage=5277&rft.epage=5283&rft.aulast=Luo Xiang-Dong&rft.aufirst=&rft.atitle=Low+energy+oscillatory+phenomena+in+photoreflectance+and+photo-modulation+reflectance+spectra+of+GaMnAs+films+grown+by+low+temperature+molecular-beam+epitaxy
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000258602600097
http://www.scopus.com/record/display.url?eid=2-s2.0-51649120878&origin=inward -
13Academic Journal
Relation: http://repository.ust.hk/ir/Record/1783.1-106450; 物理=Physics, v. 2007, (01), 2007, p. 7-10
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14Academic Journal
مصطلحات موضوعية: Quantum dots, 量子點, 稀磁半導體, 反膠束, 光致熒光, Diluted magnetic semiconductors, Cd1-xMnxS, Reverse micelles, Photoluminescence
Relation: http://repository.ust.hk/ir/Record/1783.1-11047; 高等学校化学学报=Chemical Journal of Chinese Universities, v. 2004, (09), 2004, p. 1593-1596; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0251-0790&rft.volume=25&rft.issue=9&rft.date=2004&rft.spage=1593&rft.epage=1596&rft.aulast=Pang&rft.aufirst=Q&rft.atitle=Synthesis+of+Cd1-xMnxS+quantum+dots+via+reverse+micelles+and+its+photoluminescence+performance; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000224014600003
الاتاحة: http://repository.ust.hk/ir/Record/1783.1-11047
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0251-0790&rft.volume=25&rft.issue=9&rft.date=2004&rft.spage=1593&rft.epage=1596&rft.aulast=Pang&rft.aufirst=Q&rft.atitle=Synthesis+of+Cd1-xMnxS+quantum+dots+via+reverse+micelles+and+its+photoluminescence+performance
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000224014600003 -
15Academic Journal
مصطلحات موضوعية: GaAsSb/GaAs, Selectively-excited, Type II transition, 選擇激發, Ⅱ類躍遷
Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-16034; 物理学报=Acta Physica Sinica, v. 52, (7), July 2003, p. 1761-1765; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038
الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-16034
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038 -
16Academic Journal
مصطلحات موضوعية: Coulomb blockade, Nano-structure, Single electron transistor, Single electron tunneling, 納米結構, 單電子晶體管, 庫侖阻塞, 單電子隧穿, (SCOPUS)2-s2.0-0038412559
Relation: http://repository.ust.hk/ir/Record/1783.1-22138; 电子学报=Acta Electronica Sinica, v. 2003, (02), 2003, p. 301-302; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0372-2112&rft.volume=31&rft.issue=2&rft.date=2003&rft.spage=301&rft.aulast=Lu&rft.aufirst=G.&rft.atitle=Fabrication+techniques+of+nano-structure&rft.title=Tien+Tzu+Hsueh+Pao%2FActa+Electronica+Sinica
الاتاحة: http://repository.ust.hk/ir/Record/1783.1-22138
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0372-2112&rft.volume=31&rft.issue=2&rft.date=2003&rft.spage=301&rft.aulast=Lu&rft.aufirst=G.&rft.atitle=Fabrication+techniques+of+nano-structure&rft.title=Tien+Tzu+Hsueh+Pao%2FActa+Electronica+Sinica -
17Academic Journal
مصطلحات موضوعية: GaAsSb/GaAs, Selectively-excited, Type II transition, 選擇激發, Ⅱ類躍遷
Relation: http://repository.ust.hk/ir/Record/1783.1-16034; 物理学报=Acta Physica Sinica, v. 2003, (07), 2003, p. 1761-1765; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038
الاتاحة: http://repository.ust.hk/ir/Record/1783.1-16034
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038 -
18Academic Journal
مصطلحات موضوعية: 量子阱, 快速热处理, 电子发射, DX中心, Quantum well, Rapid thermal annealing, Electron emission, DX centers
Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-52523; 物理学报=Acta Physica Sinica, v. 51, (2), February 2002, p. 367-371; https://doi.org/10.7498/aps.51.367; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=51&rft.issue=2&rft.date=2002&rft.spage=367&rft.epage=371&rft.aulast=Lu&rft.aufirst=LW&rft.atitle=Effect+of+rapid+thermal+annealing+on+electron+emission+and+DX+centers+in+strained+InGaAs/GaAs+single+quantum+well+laser+diodes; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000173710400031; http://www.scopus.com/record/display.url?eid=2-s2.0-0345795559&origin=inward
الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-52523
https://doi.org/10.7498/aps.51.367
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=51&rft.issue=2&rft.date=2002&rft.spage=367&rft.epage=371&rft.aulast=Lu&rft.aufirst=LW&rft.atitle=Effect+of+rapid+thermal+annealing+on+electron+emission+and+DX+centers+in+strained+InGaAs/GaAs+single+quantum+well+laser+diodes
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000173710400031
http://www.scopus.com/record/display.url?eid=2-s2.0-0345795559&origin=inward -
19Academic Journal
مصطلحات موضوعية: 異質結雙極晶體管(HBT), 鎮流電阻, 電流集邊效應, Ballasting resistors, Current crowding effect, Heterojunction bipolar transistors
Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-23403; 半导体学报=Chinese Journal of Semiconductors, v. 23, (6), June 2002, p. 624-627; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0038-1101&rft.volume=46&rft.issue=11&rft.date=2002&rft.spage=1997&rft.aulast=Chang&rft.aufirst=Y.&rft.atitle=The+effect+of+vertical+emitter+ballasting+resistors+on+the+emitter+current+crowding+effect+in+heterojunction+bipolar+transistors&rft.title=Solid-State+Electronics; http://www.scopus.com/record/display.url?eid=2-s2.0-0036620955&origin=inward
الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-23403
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0038-1101&rft.volume=46&rft.issue=11&rft.date=2002&rft.spage=1997&rft.aulast=Chang&rft.aufirst=Y.&rft.atitle=The+effect+of+vertical+emitter+ballasting+resistors+on+the+emitter+current+crowding+effect+in+heterojunction+bipolar+transistors&rft.title=Solid-State+Electronics
http://www.scopus.com/record/display.url?eid=2-s2.0-0036620955&origin=inward -
20Academic Journal
مصطلحات موضوعية: 分子束外延生長, 高電子遷移率超高速微結構功能材料, 深中心, Molecular beam epitaxy growth, P-HEMT and HEMT functional materials, Deep centers
Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-45541; 物理学报=Acta Physica Sinica, v. 51, (2), 2002, p. 372-376; https://doi.org/10.7498/aps.51.372; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=51&rft.issue=2&rft.date=2002&rft.spage=372&rft.epage=376&rft.aulast=Lu&rft.aufirst=LW&rft.atitle=Deep+centers+investigations+of+P-HEMT+functional+materials+of+ultra-high-speed+microstructures+grown+by+MBE; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000173710400032; http://www.scopus.com/record/display.url?eid=2-s2.0-0347687417&origin=inward
الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-45541
https://doi.org/10.7498/aps.51.372
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=51&rft.issue=2&rft.date=2002&rft.spage=372&rft.epage=376&rft.aulast=Lu&rft.aufirst=LW&rft.atitle=Deep+centers+investigations+of+P-HEMT+functional+materials+of+ultra-high-speed+microstructures+grown+by+MBE
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000173710400032
http://www.scopus.com/record/display.url?eid=2-s2.0-0347687417&origin=inward