-
1Academic Journal
Alternate Title: Study on the preparation and properties of nano-sized barium titanate slurry and tape casting. (English)
المصدر: Journal of Functional Materials / Gongneng Cailiao; 2024, Vol. 55 Issue 11, p11084-11089, 6p
-
2Academic Journal
المؤلفون: 徐, 堃
المصدر: Advances in Environmental Protection ; volume 14, issue 06, page 1401-1410 ; ISSN 2164-5485 2164-5493
-
3Academic Journal
المؤلفون: 徐, 堃
المصدر: Sustainable Development ; volume 14, issue 08, page 2083-2092 ; ISSN 2160-7540 2160-7559
-
4Academic Journal
المؤلفون: 徐, 堃
المصدر: Sustainable Development ; volume 14, issue 03, page 652-660 ; ISSN 2160-7540 2160-7559
-
5Report
المؤلفون: 徐, 堃
جغرافية الموضوع: Минск
Relation: 徐, 堃. 俄语国家语料库在带说明从句的主从复合句教学中的辅助作用 = The auxiliary role of the russian national corpus in teaching of compound sentences with explanatory clauses / 堃 徐 // Этнокультурный и социолингвистический аспекты в теории и практике преподавания языков в негуманитарных вузах [Электронный ресурс] : сборник научных статей ІІІ Международной научно-практической конференции Минск, 30 марта 2023 г. / Факультет международного сотрудничества; редкол.: И. В. Будько (отв. ред.) [и др.]. – Минск : БНТУ, 2023. – С. 274-278.; https://rep.bntu.by/handle/data/134644
-
6Dissertation/ Thesis
-
7Dissertation/ Thesis
-
8Dissertation/ Thesis
-
9Dissertation/ Thesis
-
10Dissertation/ Thesis
-
11
المؤلفون: 徐堃哲
مصطلحات موضوعية: 次世代網路, IP多媒體子系統, Web服務, 狀態服務, Next Generation Network, IP Multimedia Subsystem, Web service, Presence Service
Relation: http://ir.lib.ntust.edu.tw/handle/987654321/45620; http://ir.lib.ntust.edu.tw/bitstream/987654321/45620/-1/index.html
-
12
المؤلفون: 徐堃豪, Kuen-Hao Shiu
المساهمون: 洪銘輝, 郭瑞年, Ming-Hwei Hong, Ray-Nien Kwo
مصطلحات موضوعية: 高介電常數閘極介電質, 三五族化合物半導體, 金氧半場效電晶體,金屬氧化物半導體, 氧化鎵(氧化釓),氧化鋁,砷化銦鎵,砷化鎵, 原子層化學氣相沉積, 分子束磊晶, high-k gate dielectric, III-V compound semiconductor, MOSFET,MOSCAP, Ga2O3(Gd2O3), Al2O3, InGaAs,GaAs, atomic layer deposition (ALD), molecular beam epitaxy (MBE)
Time: 27
وصف الملف: 155 bytes; text/html
Relation: [1] G. E. Moore, Electronics 38, 114 (1965) [2] http://www.intel.com/technology/mooreslaw/index.htm [3] R. Chau et al., Nikkei Microdevices, p.83-88, (Feb. 2002) [4] International Technology Roadmap for Semiconductors, Semiconductor Industry Association, (2001) [5] K. Saraswat et al., IEDM short course (2007) [6] Michel Houssa, High-? Gate Dielectrics, IOP publishing, (2004) [7] S. Thompson et al., IEDM Technical Digest, p.61, (2002) [8] R. Chau et al., IEDM Technical Digest, p.45, (2000) [9] R. Chau et al., Physica E, Low-dimensional Systems and Nanostructures, Vol. 19, Issues 1-2, p.1, (2003) [10] D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, and G. Timp, Nature (London) 399, 758 (1999) [11] J. B. Neaton, D. A. Muller, and N. W. Ashcroft, Phys. Rew. Lett. 85, 1298 (2000) [12] M. Depas, B. Vermeire, P. W. Mertens, R. L. Van Meirhaeghe and M. M. Heyns, Solid-State Electron. 38, 1465 (1995) [13] S. H. Lo, D. A. Buchanan, Y. Taur and W. Wang, IEEE Electron Dev. Lett. 18, 209 (1997) [14] A. T. Fromhold, Quantum Mechanics for Applied Physics and Engineering (New York: Dover) (1981) [15] E. Merzbacher, Quantum Mechanics (New York: Wiley) (1998) [16] Proceedings of the IEEE, Vol. 89, No. 3, (March 2001) [17] K. Rim et al., IEDM short course (2007) [18] S. Takagi et al., IEEE TED, 41, 2357 (1994) [19] J. F. Zheng, W. Tsai, T. D. Lin, Y. J. Lee, C.P. Chen, M. Hong, J. Kwo, S. Cui, and T. P. Ma, Appl. Phys. Lett. 91, 223502 (2007) [20] Y. Xuan, Y. Q. Wu, H. C. Lin, T. Shen, and P. D. Ye, IEEE Electron Dev. Lett. 28, 11 (2007) [21] K Saraswat et al., Materials Science and Engineering B, 135, 3, 242 (2006) [22] K. Rim, J. L. Hoyt, and J. F. Gibbons, IEEE Transactions on Electron Devices, 47, 7, 1406 (2000) [23] K. Mistry et al., IEDM Technical Digest, (2007) [24] G. D. Wilk et al., Journal of Applied Physics, 89, 5243 (May 2001). [25] P. Bai et al., IEDM Tech. Dig., pp. 657-660, (2004) [26] J. Robertson and B. Falabretti, Materials Science and Engineering B 135, 267 (2006) [27] J. Robertson and B. Falabretti, Journal of Applied Physics 100, 014111 (2006) [28] T. S Lay et al., Solid-State Electronics 45, 45, 9, 1679-1682 (2001) [29] W. C. Lee et al., Journal of Crystal Growth 278, 619-623 (2005) [30] G. K. Dalapati et al., Appl. Phys. Lett. 91, 242101 (2007) [31] H. C. Lin, P. D. Ye and G. D. Wilk, Appl. Phys. Lett. 87, 182904 (2005) [32] Y. Xuan, H. C. Lin, P. D. Ye and G. D. Wilk, Appl. Phys. Lett. 88, 263518 (2006) [33] H. Kim, P. C. McIntyre and K. C. Saraswat, Appl. Phys. Lett. 82, 106-108 (2003) [34] S. Chatterjee, Y. Kuo and J. Lu, Microelectronic engineering 85, 202-209 (2008) [35] S. M. Sze, Semiconductor Devices: Physics and Technology, Second Edition, Wiley, New York (2002) [36] http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaInAs/electric.html [37] M. Hong, C.T. Liu, H. Reese, and J. Kwo, in: J.G.Webster (Ed.), Encyclopedia of Electrical and Electronics Engineering, vol. 19, John Wiley and Sons, New York, 1999, pp. 87-100, and references therein. [38] M. Hong, J.P. Mannaerts, J.E. Bowers, J. Kwo, M. Passlack,W.-Y. Hwang, L.W. Tu, J. Cryst. Growth, 175/176, 422 (1997) [39] M. Hong, J. Kwo, A.R. Kortan, J.P.Mannaerts, A.M. Sergent, Science 283, 1897 (1999) [40] P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 84, 434 (2004) [41] M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 87, 252104 (2005) [42] I. Ok, H. Kim, M. Zhang, C.-Y. Kang, S. J. Rhee, C. Choi, S. A. Krishnan, T. Lee, F. Zhu, G. Thareja, and J.C. Lee, IEEE Electron Device Lett. 27, 145 (2006) [43] W. P. Li, X. W. Wang, Y. X. Liu, S. I. Shim, and T. P. Ma, Appl. Phys. Lett. 90, 193503 (2007) [44] F. Ren, M. Hong, W.S. Hobson, J.M. Kuo, J.R. Lothian, J.P. Mannaerts, J. Kwo, Y.K. Chen, A.Y. Cho, Sol. State Electron. 41, 1751 (1997) [45] Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, J.S. Weiner, Y.K. Chen, A.Y. Cho, Mater. Res. Soc. Symp. Proc. 573, 219 (1999) [46] F. Ren, J.M. Kuo, M. Hong, W.S. Hobson, J.R. Lothian, J. Lin, W.S. Tseng, J.P. Mannaerts, J. Kwo, S.N.G. Chu, Y.K. Chen, A.Y. Cho, IEEE Electron Device Lett. 19, 309 (1998) [47] Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, Y.K. Chen, A.Y. Cho, IEEE Electron Device Lett. 20, 457 (1999) [48] J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, A. M. Sergent, and R. L. Masaitis, Appl. Phys. Lett.75, 1116 (1999) [49] M. Hong, J. Kwo, P. J. Tsai , Y. C. Chang, M. L. Huang , C. P. Chen, and T. D. Lin, Japanese Journal of Applied Physics 46, Part 1 No. 5B, 3167 (2007) [50] M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, and K. Y. Cheng, Appl. Phys. Lett. 76, 312 (2000) [51] C. P. Chen, Y. J. Lee, Y. C. Chang, Z. K. Yang, M. Hong, J. Kwo, H. Y. Lee, and T. S. Lay, J. Appl. Phys. 100, 104502 (2006) [52] Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. 86, 191905 (2005) [53] M. A. Herman, H. Sitter, Molecular Beam Epitaxy- Fundamentals and Current Status, Springer-Verlag Berlin Heidelberg (1989) [54] Kittel, Introduction to Solid State Physics, Wiley (1996) [55] Scott Bonham, An Introduction to RHEED (1997) [56] John C. Vickerman, Surface Analysis: The Principal Techniques, Wiley (2003) [57] Raymond E. March and Richard J. Hughes; with a historical review by John F.J. Todd., Quadrupole storage mass spectrometry, Wiley (1989) [58] http://en.wikipedia.org/wiki/Atomic_layer_deposition [59] Mikko Ritala, Kaupo Kukli, Antti Rahtu, Petri I. Räisänen, Markku Leskelä, Timo Sajavaara, and Juhani Keinonen, Science 288, 319-321 (2000) [60] B. J. Sealy, Semicond. Sci. Technol. 3, 448 (1988) [61] B. Maiti, P. J. Tobin, C. Hobbs, R. I. Hegde, F. Huang, DLO Meare, D. Jovanovic, M. Mendicino, J. Chen, D. Connelly, O. Adetutu, , J. Mogab, J. Candelaria, and L. B. La., Tech. Dig. Int.-Electron Devices Meet. (IEEE, Piscataway), p.781 (1998) [62] D. Shindo. T. Oikawa, Analytical Electron Microscopy for Materials Science, Springer (2002) [63] David B. Williams and C. Barry Carter, Transmission Electron Microscopy, Plenum (1996) [64] E. H. Nicollian and J. R. Brews, MOS Physics and Technology, Wiley (1982) [65] Yuan Taur and Tak H. Ning, Fndamentals of Modern VLSI Devices, Cambridge (2002) [66] Dieter K. Schroder, Semiconductor Material and Device Characterization, Third Edition, Wiley (2006) [67] B. E. Deal, IEEE Trans. Electron Dev., vol. ED-27, p.p. 606-608, March (1980) [68] E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055-1133 (1967) [69] D. Choia, J. S. Harris, M. Warusawithana and D. G. Schlom, Appl. Phys. Lett. 90, 243505 (2007) [70] E. M. Vogel, W. K. Henson, C. A. Richter, and J. S. Suehle, IEEE Trans. Electron Dev. 47, 601-608, March (2000) [71] L. M. Terman, Solid-State Electron. 5, 285-299, Sept./Oct. (1962) [72] H.-C. Lin, S. Senanayake, K.-Y. Cheng, M. Hong, J. Kwo, B. Yang, and J. P. Mannaerts, IEEE Trans. Electron Devices 50, 880 (2003) [73] K. Martens, C. O. Chui, G. Brammertz, B. D. Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes and G. Groeseneken, IEEE Trans. Electron Devices 55, 2, 547, February (2008) [74] P. D. Ye et al., IEEE EDL, 24, 4, 209, April (2003) [75] P. D. Ye et al., Appl. Phys. Lett., 83, 180, July (2003) [76] P. D. Ye et al., Appl. Phys. Lett., 84, 434, January (2004) [77] H.-S. Kim et al., Appl. Phys. Lett., 89, 222904 (2006) [78] B. Yang et al., Journal of Crystal Growth 251, 837-842 (2003) [79] P. J. Tsai et al., Journal of Crystal Growth 301-302, 1013-1016 (2007); http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/29520
-
13Dissertation/ Thesis