المؤلفون: Wang H (Wang H.), Jiang DS (Jiang D. S.), Jahn U (Jahn U.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Yang H (Yang H.), Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn

مصطلحات موضوعية: Gallium Nitride, Indium Gallium Nitride, Cathodeluminescence, X-ray Diffraction, Metal-organic Chemical Vapor Deposition, 光电子学, x-ray crystallography, metal organic chemical vapor deposition, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition)

Relation: THIN SOLID FILMS; Wang H (Wang H.), Jiang DS (Jiang D. S.), Jahn U (Jahn U.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Yang H (Yang H.).Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.THIN SOLID FILMS,2010,518(17):5028-5031; http://ir.semi.ac.cn/handle/172111/13476

الاتاحة: http://ir.semi.ac.cn/handle/172111/13476

المؤلفون: Li MC, Qiu YX, Liu GJ, Wang YT, Zhang BS, Zhao LC, Li MC Harbin Inst Technol Sch Mat Sci & Engn POB 405 Harbin 150001 Peoples R China. E-mail Address: mcli@hit.edu.cn

مصطلحات موضوعية: X-ray-diffraction, Molecular-beam-epitaxy, Films, Misfit, 半导体物理, x-ray crystallography, atomic layer deposition, photography--films, finite volume method, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, atomic layer epitaxial growth, ale, mle growth

Relation: JOURNAL OF APPLIED PHYSICS; Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC .Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates ,JOURNAL OF APPLIED PHYSICS,2009 ,105(9):Art. No. 094903; http://ir.semi.ac.cn/handle/172111/7159

الاتاحة: http://ir.semi.ac.cn/handle/172111/7159

المؤلفون: Zhang, PF, Wei, HY, Cong, GW, Hu, WG, Fan, HB, Wu, JJ, Zhu, QS, Liu, XL, Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, Metal-organic Chemical Vapor Deposition, Zinc Oxide, Structural Properties, 半导体材料, x-ray crystallography, metal organic chemical vapor deposition, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition)

Relation: THIN SOLID FILMS; Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL .Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition ,THIN SOLID FILMS,2008 ,516(6): 925-928; http://ir.semi.ac.cn/handle/172111/6868

الاتاحة: http://ir.semi.ac.cn/handle/172111/6868

المؤلفون: Wei, XC, Zhao, YW, Dong, ZY, Li, JM, Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xcwei@semi.ac.cn

مصطلحات موضوعية: Defects, X-ray Diffraction, Growth From Vapor, Oxides, Semiconducting Ii-vi Materials, 半导体材料, x-ray crystallography, anomalies, defauts, fehler, flaws, imperfections, faults (defects), x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF CRYSTAL GROWTH; Wei, XC; Zhao, YW; Dong, ZY; Li, JM .Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method ,JOURNAL OF CRYSTAL GROWTH,2008 ,310(3): 639-645; http://ir.semi.ac.cn/handle/172111/6880

الاتاحة: http://ir.semi.ac.cn/handle/172111/6880

المؤلفون: Su FH, Chen W, Ding, K, Li GH, Chen, W, Univ Texas Arlington, Dept Phys, POB 19059, Arlington, TX 76019 USA. 电子邮箱地址: weichen@uta.edu, ghli@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, 半导体化学, x-ray crystallography, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF PHYSICAL CHEMISTRY A; Su, FH; Chen, W; Ding, K; Li, GH .New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides ,JOURNAL OF PHYSICAL CHEMISTRY A,2008 ,112(21): 4772-4777; http://ir.semi.ac.cn/handle/172111/6670

الاتاحة: http://ir.semi.ac.cn/handle/172111/6670

المؤلفون: Zhao, DG, Jiang, DS, Zhu, JJ, Liu, ZS, Zhang, SM, Wang, YT, Yang, H, Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, Epitaxial Gan, Dependence, Photoluminescence, Growth, Films, 半导体物理, x-ray crystallography, dependency, development, photography--films, finite volume method, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: CHINESE PHYSICS LETTERS; Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Wang, YT; Yang, H .Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells ,CHINESE PHYSICS LETTERS,2008 ,25(11): 4143-4146; http://ir.semi.ac.cn/handle/172111/6372

الاتاحة: http://ir.semi.ac.cn/handle/172111/6372

المؤلفون: Wang H, Huang Y, Sun Q, Chen J, Zhu JJ, Wang LL, Wang YT, Yang H, Wu MF, Qu YH, Jiang DS, Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: MATERIALS LETTERS; Wang, H (Wang, H.); Huang, Y (Huang, Y.); Sun, Q (Sun, Q.); Chen, J (Chen, J.); Zhu, JJ (Zhu, J. J.); Wang, LL (Wang, L. L.); Wang, YT (Wang, Y. T.); Yang, H (Yang, H.); Wu, MF (Wu, M. F.); Qu, YH (Qu, Y. H.); Jiang, DS (Jiang, D. S.) .Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition ,MATERIALS LETTERS,JAN 2007 ,61 (2):516-519; http://ir.semi.ac.cn/handle/172111/9708

الاتاحة: http://ir.semi.ac.cn/handle/172111/9708

المؤلفون: Shi WH (Shi Wenhua), Zhao L (Zhao Lei), Luo LP (Luo Liping), Wang QM (Wang Qiming), Shi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: whshi@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY; Shi, WH (Shi, Wenhua); Zhao, L (Zhao, Lei); Luo, LP (Luo, Liping); Wang, QM (Wang, Qiming) .Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction ,JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,MAY 2007,23 (3):301-303; http://ir.semi.ac.cn/handle/172111/9394

الاتاحة: http://ir.semi.ac.cn/handle/172111/9394

المؤلفون: Chen J, Wang JF, Wang H, Zhu JJ, Zhang SM, Zhao DG, Jiang DS, Yang H, Jahn U, Ploog KH, Chen, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: jchen@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Chen J (Chen J.); Wang JF (Wang J. F.); Wang H (Wang H.); Zhu JJ (Zhu J. J.); Zhang SM (Zhang S. M.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Jahn U (Jahn U.); Ploog KH (Ploog K. H.) .Measurement of threading dislocation densities in GaN by wet chemical etching ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(9):1229-1235; http://ir.semi.ac.cn/handle/172111/10436

الاتاحة: http://ir.semi.ac.cn/handle/172111/10436

المؤلفون: Wang H (Wang H.), Huang Y (Huang Y.), Sun Q (Sun Q.), Chen J (Chen J.), Wang LL (Wang L. L.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Zhang SM (Zhang S. M.), Jiang DS (Jiang D. S.), Wang YT (Wang Y. T.), Yang H (Yang H.), Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, Electron-transport, Epitaxial Gan, Band-gap, Dislocations, Sapphire, Aln, 光电子学, x-ray crystallography, charge exchange, energy bands, aluminum oxide, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: APPLIED PHYSICS LETTERS; Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.) .Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition ,APPLIED PHYSICS LETTERS,2006 ,89(9):Art.No.092114; http://ir.semi.ac.cn/handle/172111/10432

الاتاحة: http://ir.semi.ac.cn/handle/172111/10432

المؤلفون: Zhao DG (Zhao D. G.), Yang H (Yang Hui), Zhu JJ (Zhu J. J.), Jiang DS (Jiang D. S.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Wang YT (Wang Y. T.), Liang JW (Liang J. W.), Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, Scattering, Growth, Layers, 光电子学, x-ray crystallography, potential scattering, development, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, 散射, beta-ray scattering, particle scattering, attenuation

Relation: APPLIED PHYSICS LETTERS; Zhao DG (Zhao D. G.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Jiang DS (Jiang D. S.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Wang YT (Wang Y. T.); Liang JW (Liang J. W.) .Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films ,APPLIED PHYSICS LETTERS,2006 ,89(11):Art.No.112106; http://ir.semi.ac.cn/handle/172111/10400

الاتاحة: http://ir.semi.ac.cn/handle/172111/10400

المؤلفون: Liu JQ, Liu FQ, Lu XZ, Guo Y, Wang ZG, Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: fqliu@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, Molecular Beam Epitaxy, Semiconducting Gallium Compounds, Quantum-cascade Lasers (Qcls), Unipolar Semiconductor-lasers, Mu-m, Operation, 半导体材料, x-ray crystallography, atomic layer deposition, chrysanthemum morifolium, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, atomic layer epitaxial growth, ale

Relation: SOLID-STATE ELECTRONICS; Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG .Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power ,SOLID-STATE ELECTRONICS,2005,49(12):1961-1964; http://ir.semi.ac.cn/handle/172111/10908

الاتاحة: http://ir.semi.ac.cn/handle/172111/10908

المؤلفون: Chen CL, Chen NF, Liu LF, Wu JL, Liu ZK, Yang SY, Chai CL, Chen, CL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: clchen@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, 半导体材料, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF CRYSTAL GROWTH; Chen, CL; Chen, NF; Liu, LF; Wu, JL; Liu, ZK; Yang, SY; Chai, CL .Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition ,JOURNAL OF CRYSTAL GROWTH,JUN 1 2005,279 (3-4):272-275; http://ir.semi.ac.cn/handle/172111/8686

الاتاحة: http://ir.semi.ac.cn/handle/172111/8686

المؤلفون: Zhang JC, Jiang DS, Sun Q, Wang JF, Wang YT, Liu JP, Chen J, Jin RQ, Zhu JJ, Yang H, Dai T, Jia QJ, Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: APPLIED PHYSICS LETTERS; Zhang, JC; Jiang, DS; Sun, Q; Wang, JF; Wang, YT; Liu, JP; Chen, J; Jin, RQ; Zhu, JJ; Yang, H; Dai, T; Jia, QJ .Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells ,APPLIED PHYSICS LETTERS,AUG 15 2005,87 (7):Art.No.071908; http://ir.semi.ac.cn/handle/172111/8532

الاتاحة: http://ir.semi.ac.cn/handle/172111/8532

المؤلفون: Chen CL, Chen NF, Liu LF, Li YL, Wu JL, Chen, CL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

مصطلحات موضوعية: X-ray Diffraction, 半导体材料, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF CRYSTAL GROWTH; Chen, CL; Chen, NF; Liu, LF; Li, YL; Wu, JL .Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy ,JOURNAL OF CRYSTAL GROWTH,JAN 2 2004,260 (1-2):50-53; http://ir.semi.ac.cn/handle/172111/8220

الاتاحة: http://ir.semi.ac.cn/handle/172111/8220

المؤلفون: Zhang FQ, Chen NF, Liu XL, Liu ZK, Yang SY, Chai CL, Zhang, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqzh@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, 半导体材料, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF CRYSTAL GROWTH; Zhang, FQ; Chen, NF; Liu, XL; Liu, ZK; Yang, SY; Chai, CL .The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N ,JOURNAL OF CRYSTAL GROWTH,FEB 15 2004,262 (1-4):287-289; http://ir.semi.ac.cn/handle/172111/8170

الاتاحة: http://ir.semi.ac.cn/handle/172111/8170

المؤلفون: Song SL, Chen NF, Zhou JP, Yin ZG, Li YL, Yang SY, Liu ZK, Song, SL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: slsong@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, 半导体材料, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF CRYSTAL GROWTH; Song, SL; Chen, NF; Zhou, JP; Yin, ZG; Li, YL; Yang, SY; Liu, ZK .Mn implanted GaAs by low energy ion beam deposition ,JOURNAL OF CRYSTAL GROWTH,MAR 15 2004,264 (1-3):31-35; http://ir.semi.ac.cn/handle/172111/8136

الاتاحة: http://ir.semi.ac.cn/handle/172111/8136

المؤلفون: Zhang JC, Wang JF, Wang YT, Wu M, Liu JP, Zhu JJ, Yang H, Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF APPLIED CRYSTALLOGRAPHY; Zhang, JC; Wang, JF; Wang, YT; Wu, M; Liu, JP; Zhu, JJ; Yang, H .Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells ,JOURNAL OF APPLIED CRYSTALLOGRAPHY,Part 3 JUN 2004 ,37(0 ):391-394; http://ir.semi.ac.cn/handle/172111/8074

الاتاحة: http://ir.semi.ac.cn/handle/172111/8074

المؤلفون: Zhang BS, Wu M, Liu JP, Chen J, Zhu JJ, Shen XM, Feng G, Zhao DG, Wang YT, Yang H, Boyd AR, Zhang, BS, Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Weixing Rd 7083, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com

مصطلحات موضوعية: X-ray Diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

Relation: JOURNAL OF CRYSTAL GROWTH; Zhang, BS; Wu, M; Liu, JP; Chen, J; Zhu, JJ; Shen, XM; Feng, G; Zhao, DG; Wang, YT; Yang, H; Boyd, AR .Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer ,JOURNAL OF CRYSTAL GROWTH,OCT 1 2004,270 (3-4):316-321; http://ir.semi.ac.cn/handle/172111/7946

الاتاحة: http://ir.semi.ac.cn/handle/172111/7946

المؤلفون: Luo MC, Li JM, Wang QM, Sun GS, Wang L, Li GR, Zeng YP, Lin LY, Luo MC,Chinese Acad Sci,Inst Semicond,Novel Semicond Mat Lab,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Infrared Reflectivity, Raman, Sapphire Substrate, X-ray Diffraction, Chemical Vapor Deposition, Sic, Gan, Films, 半导体材料, x-ray crystallography, atomic layer deposition, vapor-plating, photography--films, finite volume method, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学

Relation: JOURNAL OF CRYSTAL GROWTH; Luo MC; Li JM; Wang QM; Sun GS; Wang L; Li GR; Zeng YP; Lin LY .Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation ,JOURNAL OF CRYSTAL GROWTH,2003,249 (1-2):1-8; http://ir.semi.ac.cn/handle/172111/11668

الاتاحة: http://ir.semi.ac.cn/handle/172111/11668