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1Dissertation/ Thesis
Thesis Advisors: CHU,HSUEH-TING, 朱學亭
وصف الملف: 29
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2Dissertation/ Thesis
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3Dissertation/ Thesis
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4Dissertation/ Thesis
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5Dissertation/ Thesis
Thesis Advisors: Tzyh-Chyuan Hour, 侯自銓
وصف الملف: 68
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6Dissertation/ Thesis
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7Dissertation/ Thesis
Thesis Advisors: Ching-wu Wang, 王欽戊
وصف الملف: 35
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8Dissertation/ Thesis
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9Dissertation/ Thesis
المؤلفون: 吳嘉恩, Ng, Ka-yan, Karen.
مصطلحات موضوعية: Freight and freightage - China - Hong Kong - Planning., Logistics., Sustainable development - China - Hong Kong.
Relation: HKU Theses Online (HKUTO)
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10Dissertation/ Thesis
المؤلفون: 吳嘉恩
المساهمون: 體育學系運動教練碩博士班
مصطلحات موضوعية: 振動, 離心運動, 肌肉痠痛, 肌肉僵硬, 運動表現, vibration, eccentric exercise, muscle soreness, muscle stiffness, exercise performance
وصف الملف: 99 bytes; text/html
Relation: https://irlib.pccu.edu.tw//handle/987654321/53229; https://irlib.pccu.edu.tw/bitstream/987654321/53229/2/index.html
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المؤلفون: 吳嘉恩
المساهمون: 杜清敏
مصطلحات موضوعية: 失語症, 強化語言行動治療, 虛擬實境, 腳本治療, 嚴肅遊戲, Aphasia, Intensive Language Action Therapy, Script Therapy, Virtual Reality, Serious Game, lang, psy
Time: 15
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12Dissertation/ Thesis
المؤلفون: 吳嘉恩, WU, JIA-EN
المساهمون: 資訊工程學系
مصطلحات موضوعية: Deep Learning, Generative Adversarial Network, Automated Optical Inspection, 深度學習、生成對抗網路
وصف الملف: 99 bytes; text/html
Relation: http://asiair.asia.edu.tw/ir/handle/310904400/112471; http://asiair.asia.edu.tw/ir/bitstream/310904400/112471/2/index.html
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13
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المؤلفون: 黃昭淵, 陳逸夫, 吳嘉恩, 蒲永孝, 劉光耀, 潘敏雄, 黃胤唐, 黃阿梅, 黃啟清, 莊淑茹, 侯自銓, HUANG, CHAO-YUAN, CHEN, JEFF YI-FU, WU, JIA-EN, PU, YEONG-SHIAU, LIU, GUANG-YAW, PAN, MIN-HSIUNG, HUANG, YING-TANG, HUANG, A-MEI, HWANG, CHI-CHING, CHUNG, SHU-JU, HOUR, TZYH-CHYUAN
المساهمون: 泌尿部
مصطلحات موضوعية: Ling-Zhi polysaccharides, chemosensitivity, urothelial carcinoma, drug resistance, cisplatin, arsenic trioxide, synergistic
Relation: JOURNAL OF AGRICULTURAL AND FOOD CHEMISTRY v.58 n.15 pp.8798-8805; http://ntur.lib.ntu.edu.tw/handle/246246/234324
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15Dissertation/ Thesis
المؤلفون: 吳嘉恩, Wu, Chia-en
المساهمون: 資訊管理學系碩士班, 吳光閔, Guang-ming Wu
مصطلحات موضوعية: 使用者資訊滿意度, 資訊系統成功模式, IS Success Model, User Information Satisfaction
Relation: http://nhuir.nhu.edu.tw/handle/987654321/20535; http://nhuir.nhu.edu.tw/bitstream/987654321/20535/-1/096NHU05396015-001.pdf; http://nhuir.nhu.edu.tw/bitstream/987654321/20535/-1/index.html
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16Dissertation/ Thesis
المؤلفون: 吳嘉恩, Wu, Chia-En
المساهمون: 林浩雄, 臺灣大學：電子工程學研究所
مصطلحات موضوعية: 中紅外線, 發光二極體, 銻磷砷化銦, 多重量子井, MIR, InAsPSb, MQW, LED, light emitting diode, mid-infrared
وصف الملف: 1091219 bytes; application/pdf
Relation: [1]X. Y. Gong, H. Kan, T. Makino, K. Watanabe, T. Lida, H. Suzuki, M. Aoyama, and T. Yamagughi, “Light emitting diodes fabricated from liquid phase epitaxial InAs/ InAsxP1-x-ySby/ InAsxP1-x-ySby and InAs/ InAsxP1-x-ySby Multi-layers,” Cryst. Res. Technol., vol. 35, pp. 549-555, 2000. [2]G. Tsai, D. L. Wang, C. E. Wu, C. J. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb quaternary alloy grown by gas source molecular beam epitaxy,” J. Cryst. Growth, vol. 301- 302, pp. 134-138, 2006. [3]R. A. Stradling, “Semiconductor light sources for mid-infrared applications : concluding remarks,” Phil. Trans. R. Soc. Lond. A, vol. 359, pp. 645-658, 2001. [4]M. J. Pullin, H. R. Hardaway, J. D. Heber, C. C. Phillips, W. T. Yuen, and R. A. Stradling, “Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2μm with AlSb barriers for improved carrier confinement,” Appl. Phys. Lett., vol. 74, pp. 2384-2386, 1999. [5]E. R. Gertner, D. T. Cheung, A. M. Andrews and J. T. Longo, “Liquid phase epitaxtial growth of InAsxSbyP1-x-y layers on InAs,” J. Electron. Mater., vol. 6, pp. 163, 1977. [6]N. Kobayashi, and Y. Horikoshi, “DH Lasers Fabricated by new III-V Semiconductor material InAsPSb,” Jpn. J. Appl. Phys., vol. 19, pp. L641-L644, 1980. [7]A. Krier, “Room-temperature InAsxSbyP1-x-y light-emitting diodes for CO2 detection at 4.2μm,” Appl. Phys. Lett. , vol. 56, pp. 2428-2429, 1990. [8]A. Krier, and M. Fisher, “Comparison of light emission from room temperature light emitting diodes with InAs active regions grown by LPE,” IEE Proc.-Optoelectron, vol. 144, pp. 287-294, 1997. [9]A. Krier, and Y. Mao, “2.5μm light-emitting diodes in InAs0.36Sb0.20P0.44/ InAs for HF detection,” IEE Proc. -Optoelectron, vol. 144, pp. 355-359, 1997. [10]H. H. Gao, A. Krier, V. Sherstnev, and Y. Yakovlev, “InAsSb/ InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature, ” J. Phys. D: Appl. Phys., vol. 32, pp. 1768-1772, 1999. [11]A. Stein., A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Simecek, S. Rushworth, L. Smith, and M. Ravetz, “InAs (P, Sb)/ InAsSb LEDs emitting in the 3-4μm range at room temperature,” 11th International Conference on Indium Phosphide and Related Materials, pp. 95-98, 1999. [12]Minoru Toda, Thomas J. Zamerowski, Ivan Landy, and Ramon U. Martinelli, “Laser Materials for the 0.67μm to 2.5μm Range,” NASA Contractor Report 4050 HDL-CR-86-351-1, 1987. [13]M. Aydaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus, and G. N. Talalakin, “6W InGaAsSb(Gd)/ InAsSbP double-heterostructure diode lasers emitting at λ=3.3μm,” Appl. Phys. Lett., vol. 81, pp. 1166-1167, 2002. [14]M. Yin, A. Krier, S. Krier, R. Jones, and P. Carrington, “Mid-Infrared diode lasers for free space optical communications,” Proc. of SPIE, vol. 6399 , pp. 63990C-1-63990C-6, 2006. [15]R. M. Lin, S. F. Tang, S. C. Lee, “Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy,” IEEE Transactions on electron devices, vol. 44, 1997. [16]H. K. Choi, Long-wavelength infrared semiconductor lasers, John Wiley & sons, 2004. [17]A. Krier, and V. V. Sherstney, “LEDs for formaldehyde detection at 3.6μm,” J. Phys. D: Appl. Phys., vol. 34, pp. 428-432, 2001. [18]S. S. Kizhayev, N. V. Zotova, S. S. Molchanov, B. V. Pushnyi, and Yu. P. Yakovlev, “Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE,” J. Cryst. Growth, vol. 248, pp. 296-300, 2003. [19]B. Matveev, N. Zotova, S. Karandashov, M. Remennyi, N. Llinskaya, N. Stus, V. Shustov, G. Talalakin, and J. Malinen, “InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range,” IEE Proc. –Optoelectron, vol. 145, pp. 254-256, 1998. [20]A. A. Popov, M. V. Stepanov, V. V. Sherstney, and Yu. P. Yakovlev, “InAsSb light-emitting diodes for the detection of CO2(λ=4.3μm),” Tech. Phys. Lett., vol. 24, pp. 596-598, 1998. [21]N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova, and Yu. P. Yakovlev, “Long-wavelength light-emitting diodes(λ=3.4-3.9μm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy,” Semicond., vol.34, 2000. [22]X. Y. Gong, H. Kan, T. Makino, T. Lida, K. Watanabe, Y. Z. Gao, M. Aoyama, N. L. Rowell , and T. Yamaguchi, “Room-temperature mid-infrared light-emitting diodes from liquid-phase epitaxial InAs/ InAs0.89Sb0.11/ InAs0.80P0.12Sb0.08 heterostructures,” Jpn. J. Appl. Phys., vol. 39, pp. 5039-5043, 2000. [23]E. M. Lysczek, S. E. Mohney, and T. N. Wittberg, “Shallow ohmic contacts to p-type InAs,” Electronics Letters 11th Dec. 2003, vol.39, pp. 1866-1867, 2003. [24]A. R. Clawson, “Guide to references on III-V semiconductor chemical etching,” Mater. Sci. Eng., vol.31, pp. 1-438, 2000. [25]A. Krier, V. V. Sherstnev, Z. Labadi, S. E. Krier, and H. H. Gao, “Interface electroluminescence from InAs Quantum well LEDs grown by rapid slider liquid phase epitaxy, ” J. Phys. D: Appl. Phys., vol.33, pp. 3156-3160, 2000. [26]M. Aidaraliev, N. V. Zotova, N. D. Llinskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus, and G. N. Talalakin, “InAs and InAsSb LEDs with built-in cavities,” Semicond. Sci. Technol., vol. 18, pp. 269- 272. 2003. [27]A. Krier and V V Sherstnev, ”Powerful interface light emitting diodes for methane gas detection,” J. Phys. D: Appl. Phys., vol. 33, pp.101-106, 2000. [28]A. Krier and V V Sherstnev, H H Gao, “A novel LED module for the detection of H2S at 3.8μm,” J. Phys. D: Appl. Phys., vol. 33, pp. 1656- 1661, 2000. [29]S. M. Sze, Physics of semiconductor devices, John Wiley & sons, 1983. [30]S. J. Sweeney, A. F. Phillips, A. R. Adams, E. P. O’Reilly, and P. J. A. Thijis, “The effect of temperature dependent process on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers,” IEEE Photon. Tech. Lett., vol. 10, pp.1076-1078, 1998. [31]A. F. Philips, S. J. Sweeny, A. R. Adams, and P. J. A. Thijis, “The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers”, IEEE J. Select. Topic Quantum Electron., vol.5, pp.401-412, 1999.; zh-TW; http://ntur.lib.ntu.edu.tw/handle/246246/57679; http://ntur.lib.ntu.edu.tw/bitstream/246246/57679/1/ntu-96-R94943125-1.pdf
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17Dissertation/ Thesis
المؤلفون: 吳嘉恩, Ng, Ka-yan, Karen.
المصدر: http://hub.hku.hk/bib/B31260925.
مصطلحات موضوعية: Freight and freightage - China - Hong Kong - Planning, Sustainable development - China - Hong Kong, Logistics
Relation: HKU Theses Online (HKUTO); Ng, K. K. [吳嘉恩]. (2002). Logistics development : a way towards a sustainable transport system in Hong Kong. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3126092; b3126092; http://hdl.handle.net/10722/37530