نتائج البحث - "原子層化學氣相沉積"

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الاتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/35101

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原子層化學氣相沉積之高介電閘極絕緣層於矽及銻化銦基板之研究 ; Atomic Layer Deposition of High-k Gate Dielectrics on Silicon and Indium Antimonide

المؤلفون: 侯承浩, Hou, Chen-Hao

المساهمون: 吳泰伯, Wu, Tai-Bor

مصطلحات موضوعية: 原子層化學氣相沉積, 三五族化合物半導體, 高介電常數閘極氧化層, ALD, III-V compound semiconductor, high-k dielectrics, CMOS, HKMG

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利用氮氫和水氣電漿處理改善原子層化學氣相沉積HfO2高介電閘極氧化薄膜之熱穩定性 ; Improvement of Thermal Stability via N2/H2 and D2O Radical-annealing Treatment in Atomic Layer Deposition of HfO2 Gate Oxide

المؤلفون: 林民和, Lin, Ming-Ho

المساهمون: 吳泰伯, 甘炯耀, Wu, Tai-Bor, Gan, Jon-Yiew

مصطلحات موضوعية: 原子層化學氣相沉積, 電漿, 高介電材料, ALD, plasma, high-k material

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Moulson and J. M. Herbet, “Electronceramics-materials, Properties, Applications” published by Capman and Hall (1990) 22. L. L. Hencb and J. K. West, “Principles of Electronic Ceramic”, published by John Wiley and Sons, Inc. (1990) 23. M. W. Barsoum, “Fundamentals of Ceramics” published by McGraw-Hill, Inc. (1997) 24. W. D. Kingery, H. K. Bowen and D. R. Uhlmann, “Introduction to ceramics” , published by Johm Wiley Sons. (1991) 25. Sang Bom Kang, Yun Sook Chae, Mee Young Yoon, Hyeun Seog Leem, Chang Soo Park, Sang In Lee, and Moon Yong Lee, “Low temperature processing of conformal TiN by ACVD (Advanced chemical vapor deposition) for Multilevel Metallization in high density ULSI devices”, IEEE, IITC 102-104 (1998) 26. http://proj.moeaidb.gov.tw/eta/Handout/2004071310.pdf 27. J. L. van Hemmen, S. B. S. Heil, J. H. Klootwijk, F. Roozeboom, C. J. Hodson, M. C. M. van de Sanden, and W. M. M. Kesselsa, “Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor”, Journal of The Electrochemical Society Vol 154 , 7, G165-G169 (2007) 28. http://che.cycu.edu.tw/outstanding/material_lab/material/mechanism.pdf 29. Nicollian, E. H., and J. R. Brews.,“MOS Physics and Technology” ,New York, Wiley, 1982. 30. 蔡伩哲, “以高介電值材料作為矽基板上閘極介電層之研製與特性分析”,中原大學碩士論文(2002) 31. Jihoon Choi, Seokhoon Kim, Jinwoo Kim, Hyunseok Kang, Hyeongtag Jeon, Choelhwyi Bae, “Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods”, J. Vac. Sci. Technol. A 24„4, 2006 32. Hyungchul Kim, Seokhoon Kim, Sanghyun Woo, Hye Yeong Chung, Honggyu Kim, Jongsan Park, and Hyeongtag Jeona, “Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments”, Journal of The Electrochemical Society, 155 ,12, G299-G303 (2008) 33. J. Morais, L. Miotti, G. V. Soares, S. R. Teixeira, R. Pezzi, K. P. Bastos, and I. J. R. Baumvol, A. L. P. Rotondaro, J. J. Chambers, M. R. Visokay, and L. Colombo, “Integrity of hafnium silicate/silicon dioxide ultrathin films on Si”, Appl. Phys. Lett., Vol. 81, No. 16, 14 October 2002 34. Jiurong Liu, Ryan M. Martin, and Jane P. Chang, “Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition”, J. Vac. Sci. Technol. A 26„5, ( 2008) 35. Kwun-Bum Chung, W. J. Lee, C. Y. Kim, Mann-Ho Cho, and Dae Won Moon , “Nucleation Behavior of Atomic Layer Deposited SiO2 for Hf-Silicate Films”, Journal of The Electrochemical Society, 156 , 5 , G43-G47 (2009) 36. G. Pant, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch, and S. Krishnan,” Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics”, Appl. Phys. Lett., 89, 032904 (2006) 37. M.-H. Cho, K. B. Chung, C. N. Whang, D. W. Lee, and D.-H. 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Oxide Scalability Characteristics in MBE grown Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs MOS Capacitors and ALD-Al2O3/In0.2Ga0.8As/GaAs MOSFET : ALD Growth, Processing, and Characteristics ; 以分子束磊晶成長氧化鋁/氧化鎵(氧化釓)/砷化銦鎵/砷化鎵金氧半電容之氧化層微縮特性研究與以原子層沉積術成長氧化鋁/砷化銦鎵/砷化鎵金氧半場效電晶體之製程與特性研究

المؤلفون: 徐堃豪, Kuen-Hao Shiu

المساهمون: 洪銘輝, 郭瑞年, Ming-Hwei Hong, Ray-Nien Kwo

مصطلحات موضوعية: 高介電常數閘極介電質, 三五族化合物半導體, 金氧半場效電晶體,金屬氧化物半導體, 氧化鎵(氧化釓),氧化鋁,砷化銦鎵,砷化鎵, 原子層化學氣相沉積, 分子束磊晶, high-k gate dielectric, III-V compound semiconductor, MOSFET,MOSCAP, Ga2O3(Gd2O3), Al2O3, InGaAs,GaAs, atomic layer deposition (ALD), molecular beam epitaxy (MBE)

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探討利用原子層化學氣相沉積法鍍製Al2O3、HfO2之高介電結構薄膜，應用在奈米尺度世代DRAM影響之電性研究 ; Electrical properties of Al2O3-HfO2 dielectric capacitors using atomic layer deposition in metal-insulator-metal configuration

المؤلفون: 簡銘萱, Ming-Hsuan Chien

المساهمون: 吳泰伯, Tai-bor Wu

مصطلحات موضوعية: 原子層化學氣相沉積, 高介電薄膜, Atomic Layer Deposition, Metal-insulator-metal, DRAM

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原子層化學氣相沉積之高介電薄膜於金屬-氧化物-半導體與金屬-絕緣層-金屬結構下之應用 ; Atomic Layer Deposition of High-k Thin Films used for Metal-Oxide-Semiconductor and Metal-Insulator-Metal application

المؤلفون: 邱彥凱, Yan-Kai Chiou

المساهمون: 吳泰伯, Tai-Bor Wu

مصطلحات موضوعية: 高介電材料, 原子層化學氣相沉積, high-k, ALD

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金屬-絕緣體-半導體與金屬-絕緣體-金屬結構之高介電薄膜原子層化學氣相沉積 ; Atomic Layer Deposition of High-k Thin Films in Metal-Insulator-Semiconductor and Metal-Insulator-Metal Structures

المؤلفون: 張哲豪, Che-Hao Chang

المساهمون: 吳泰伯, Tai-Bor Wu

مصطلحات موضوعية: 原子層化學氣相沉積, 高介電薄膜, 金屬-絕緣體-半導體, 金屬-絕緣體-金屬, ALCVD, high-k thin film, MIS, MIM

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下電極材料對原子層化學氣相沉積氧化鋁高介電薄膜應用在奈米尺度世代DRAM影響之研究

المؤلفون: 李清楠, CHING-NAN LEE

المساهمون: 吳泰伯

مصطلحات موضوعية: 氧化鋁, 原子層化學氣相沉積, 記憶體, 高介電常數材料, 奈米, 製程, ALCVD, ALD, Al2O3, DRAM, Memory

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وصف الملف: 155 bytes; text/html

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