نتائج البحث - "Roger Loo"

1

Academic Journal

GeSn系IV族半導体薄膜におけるSn導入の制御と効果 / Introduction of Sn into GeSn based group-IV thin films and its impacts

المؤلفون: Federica Gencarelli, Gencarelli Federica, Loo Roger, Masashi Kurosawa, Mitsuo Sakashita, Osamu Nakatsuka, Roger Loo, Shigeaki Zaima, Shinichi Ike, Wakana Takeuchi, Yosuke Shimura, 中塚理, 坂下満男, 志村洋介, 池進一, 竹内和歌奈, 財満鎭明, 黒澤昌志

المصدر: JSAP Annual Meetings Extended Abstracts. 2016, :169

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2

Academic Journal

Influence of Precursor Gas Source on Defect Properties in Si1-xGex Epitaxial Thin Films / エピタキシャルSi1-xGex薄膜中の欠陥構造に対する前駆体ガス原料の効果

المؤلفون: Andriy Hikavyy, Eddy Simoen, Hikavyy Andriy, Loo Roger, Osamu Nakatsuka, Roger Loo, Shigeaki Zaima, Shinichi IKE, Simoen Eddy, Vandervorst Wilfried, Wakana Takeuchi, Wilfried Vandervorst, Yosuke Shimura, 中塚理, 志村洋介, 池進一, 竹内和歌奈, 財満鎭明

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :3195

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3

Academic Journal

Germanium for advanced CMOS transistors: Status and Trends

المؤلفون: Aaron Thean, Alexei Milenin, Anda Mocuta, Andriy Hikavyy, Christa Vrancken, Geert Eneman, Hans Mertens, Hiro Arimura, Hugo Bender, Jerome Mitard, Liesbeth Witters, Nadine Collaert, Naoto Horiguchi, Pieter Lagrain, Roger Loo, Sonja Sioncke, Yuichiro Sasaki

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :167

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4

NPN SiGe Hetero Junction Transistor Latch-Up Memory Selector

المؤلفون: Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Yann Canvel, Nathali Franchina Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Mustafa Ayyad, Alex Merkulov, Gouri Sankar Kar, Sebastien Couet

المصدر: IEEE Electron Device Letters. 44:614-617

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::baf7ee37c87f29632ccf8375605a4554
https://doi.org/10.1109/led.2023.3242302

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5

Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices

المؤلفون: Erik Rosseel, Clement Porret, Andriy Yakovitch Hikavyy, Roger Loo, Olivier Richard, Gerardo Tadeo Martinez, Dmitry Batuk, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi

المصدر: ECS Transactions. 109:93-98

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::65525e80c3db28ce06daa486a21b87f9
https://doi.org/10.1149/10904.0093ecst

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6

Small target compatible dimensional and analytical metrology for semiconductor nanostructures using x-ray fluorescence techniques

المؤلفون: Philipp Hönicke, Yves Kayser, Victor Soltwisch, Andre Wählisch, Nils Wauschkuhn, Jeroen E. Scheerder, Claudia Fleischmann, Janusz Bogdanowicz, Anne-Laure Charley, Anabela Veloso, Roger Loo, Hans Mertens, Andriy Hikavyy, Thomas Siefke, Anna Andrle, Grzegorz Gwalt, Frank Siewert, Richard Ciesielski, Burkhard Beckhoff

المصدر: Metrology, Inspection, and Process Control XXXVII.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ed1ba149d0a31c58d15e24225bc689f9
https://doi.org/10.1117/12.2657963

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7

Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

المؤلفون: Geoffrey Pourtois, Julien Ryckaert, Andriy Hikavyy, Alessio Spessot, Geert Eneman, Naoto Horiguchi, Philippe Matagne, Hiroaki Arimura, Roger Loo, An De Keersgieter, Paola Favia, Clement Porret, Anabela Veloso

المصدر: IEEE Transactions on Electron Devices. 68:5380-5385

مصطلحات موضوعية: Materials science, business.industry, Transistor, Nanowire, Substrate (electronics), Edge (geometry), Electronic, Optical and Magnetic Materials, law.invention, Silicon-germanium, Stress (mechanics), chemistry.chemical_compound, Stack (abstract data type), chemistry, law, Stress relaxation, Optoelectronics, Electrical and Electronic Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::694d7b20ce41464793fc48ea71611d09
https://doi.org/10.1109/ted.2021.3076754

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8

(Invited) Cutting-Edge Epitaxial Processes for Sub 3 Nm Technology Nodes: Application to Nanosheet Stacks and Epitaxial Wrap-Around Contacts

المؤلفون: Basoene Briggs, Roger Loo, Mustafa Ayyad, Manuel Mencarelli, Andriy Hikavyy, Clement Porret, Naoto Horiguchi, Robert Langer, Paola Favia

المصدر: ECS Transactions. 104:139-146

مصطلحات موضوعية: Materials science, CMOS, business.industry, Electrical resistivity and conductivity, Wrap around, Node (physics), Stacking, Optoelectronics, Edge (geometry), business, Epitaxy, Nanosheet

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a5001a4b87c213e0d6a74abc450b606
https://doi.org/10.1149/10404.0139ecst

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9

Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells

المؤلفون: Valérie Depauw, Clément Porret, Myriam Moelants, Emma Vecchio, Koen Kennes, Han Han, Roger Loo, Jinyoun Cho, Guillaume Courtois, Rufi Kurstjens, Kristof Dessein, Víctor Orejuela, Clara Sanchez‐Perez, Ignacio Rey‐Stolle, Iván García

المصدر: Progress in Photovoltaics: Research and Applications.

مصطلحات موضوعية: Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9be0842ba1898852a992183f382a0792
https://doi.org/10.1002/pip.3634

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10

GeCl4-based High Quality Ge epitaxy on Engineered Ge Substrates for Thin Multi-junction Solar Cells

المؤلفون: Jinyoun Cho, Clement Porret, Valerie Depauw, Guillaume Courtois, Daniel McDermott, Roger Loo, Kristof Dessein, Rufi Kurstjens

المصدر: 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e686d51c4a0a666cdc7f7f171624d90f
https://doi.org/10.1109/pvsc48317.2022.9938912

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11

On the Correlation Between Static and Low-Frequency Noise Parameters of Vertical Nanowire nMOSFETs

المؤلفون: Roger Loo, Hugo Bender, Eddy Simoen, Philippe Matagne, Andriy Hikavyy, E. Vancoille, Anabela Veloso, Adrian Chasin, Paola Favia, Erik Rosseel

المصدر: ECS Transactions. 97:59-64

مصطلحات موضوعية: Noise power, Materials science, business.industry, Infrasound, Transconductance, Nanowire, Optoelectronics, Spectral density, White noise, business, Noise (electronics), Threshold voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf16242387d8e22702611e6d5e17af9e
https://doi.org/10.1149/09705.0059ecst

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12

Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices

المؤلفون: Clement Porret, Gianluca Rengo, Mustafa Ayyad, Andriy Hikavyy, Erik Rosseel, Robert Langer, Roger Loo

المصدر: Japanese Journal of Applied Physics. 62:SC1043

مصطلحات موضوعية: General Engineering, General Physics and Astronomy

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::279804b222564184f610eac57573ccfb
https://doi.org/10.35848/1347-4065/acb1b9

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13

Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

المؤلفون: P. Lagrain, Thomas Hantschel, Clement Porret, Tomas Vystavel, Roger Loo, Libor Strakos, Han Han, Marina Baryshnikova, Bernardette Kunert

المصدر: International Symposium for Testing and Failure Analysis.

مصطلحات موضوعية: Materials science, business.industry, Optoelectronics, Wafer, Blanket, Epitaxy, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::aad91065a75252f3a486183c2451f8ef
https://doi.org/10.31399/asm.cp.istfa2021p0211

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14

High Absorption Contrast Quantum Confined Stark Effect in Ultra-Thin Ge/SiGe Quantum Well Stacks Grown on Si

المؤلفون: Jeroen De Coster, Ewoud Vissers, S. A. Srinivasan, Marianna Pantouvaki, Dries Van Thourhout, Hugo Bender, Roger Loo, Clement Porret, Paola Favia, Joris Van Campenhout

المصدر: IEEE Journal of Quantum Electronics. 56:1-7

مصطلحات موضوعية: Silicon photonics, Materials science, Silicon, business.industry, Quantum-confined Stark effect, chemistry.chemical_element, Germanium, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, symbols.namesake, chemistry, Stark effect, symbols, Optoelectronics, Wafer, Electrical and Electronic Engineering, Photonics, business, Quantum well

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0bb6bb398ee57a58e18dcbe1a4782d5f
https://doi.org/10.1109/jqe.2019.2949640

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15

Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation

المؤلفون: Guillaume Boccardi, Hiroaki Arimura, Roger Loo, Samuel Suhard, Daire J. Cott, Thierry Conard, Naoto Horiguchi, L.-A. Ragnarsson, V. De Heyn, Jerome Mitard, Dan Mocuta, Liesbeth Witters, H. Dekkers, D. H. van Dorp, Nadine Collaert, Kurt Wostyn

المصدر: IEEE Transactions on Electron Devices. 66:5387-5392

مصطلحات موضوعية: 010302 applied physics, Electron mobility, Record value, Materials science, Silicon, Nanowire, Analytical chemistry, chemistry.chemical_element, Germanium, 01 natural sciences, Electronic, Optical and Magnetic Materials, Hafnium, chemistry, Gate oxide, 0103 physical sciences, Electrical and Electronic Engineering, Metal gate

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1dd5f23cc243b67badeb99d80e2e88e1
https://doi.org/10.1109/ted.2019.2950332

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16

Epitaxial Growth of Ga-doped SiGe for Reduction of Contact Resistance in finFET Source/Drain Materials

المؤلفون: Roger Loo, Joe Margetis, Gianluca Rengo, Rami Khazaka, Alex Demos, Lucas P. B. Lima, John Tolle, Clement Porret, David Kohen

المصدر: ECS Transactions. 93:7-10

مصطلحات موضوعية: Ion implantation, Materials science, Electrical resistivity and conductivity, business.industry, Contact resistance, Doping, Transmission line measurement, Optoelectronics, Wafer, Dielectric, Epitaxy, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::013285f395e2aeafc5074673456571ec
https://doi.org/10.1149/09301.0007ecst

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17

Source/Drain Materials for Ge nMOS Devices

المؤلفون: Anurag Vohra, Clement Porret, Erik Rosseel, Andriy Yakovitch Hikavyy, Elena Capogreco, Naoto Horiguchi, Roger Loo, Wilfried Vandervorst

المصدر: ECS Transactions. 93:29-33

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::41aad0af62a4647ce41be9d264c4908c
https://doi.org/10.1149/09301.0029ecst

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18

Characterization of Highly Doped Si:P, Si:As and Si:P:As Epi Layers for Source/Drain Epitaxy

المؤلفون: Nabuyo Nakazaki, Erik Rosseel, Roger Loo, Geoffrey Pourtois, Bastien Douhard, Naoto Horiguchi, Johan Meersschaut, Andriy Hikavyy, John Tolle, Clement Porret, Matteo Tirrito

المصدر: ECS Transactions. 93:11-15

مصطلحات موضوعية: Physics, Analytical chemistry

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6cac222fa4101479a132bc9dc334a63f
https://doi.org/10.1149/09301.0011ecst

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19

(Digital Presentation) Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices

المؤلفون: Erik Rosseel, Clement Porret, Andriy Yakovitch Hikavyy, Roger Loo, Olivier Richard, Gerardo Tadeo Martinez, Dmitry Batuk, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi

المصدر: ECS Meeting Abstracts. :1188-1188

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d8f7f9f062bc6079309f2ea0c248bcf7
https://doi.org/10.1149/ma2022-02321188mtgabs

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20

Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties

المؤلفون: Gianluca Rengo, Clement Porret, Andriy Yakovitch Hikavyy, Gitte Coenen, Mustafa Ayyad, Richard J. H. Morris, Simone Pollastri, Danilo Oliveira De Souza, Didier Grandjean, Roger Loo, Andre Vantomme

المصدر: ECS Meeting Abstracts. :1216-1216

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::304ee247ff75e4ff22dd6049c67658cf
https://doi.org/10.1149/ma2022-02321216mtgabs

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