المؤلفون: Hitoshi Habuka, Miya Matsuo, Kenta Irikura, Shiro Hara, Mitsuko Muroi, Yuuki Ishida, Ayami Yamada, Shinichi Ikeda

المصدر: Materials Science in Semiconductor Processing. 87:13-18

مصطلحات موضوعية: Silicon, Trichlorosilane gas concentration, Materials science, Hydrogen, Physics::Instrumentation and Detectors, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, Epitaxy, 01 natural sciences, chemistry.chemical_compound, Trichlorosilane, 0103 physical sciences, General Materials Science, Wafer, Composite material, Astrophysics::Galaxy Astrophysics, 010302 applied physics, Atmospheric pressure, Mechanical Engineering, Wafer rotation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Minimal Fab, Temperature gradient, Chemical vapour deposition reactor, chemistry, Mechanics of Materials, 0210 nano-technology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bde9f4ce6837b2b776708f57f1114238
https://doi.org/10.1016/j.mssp.2018.07.006

المؤلفون: Irikura Kenta, Muroi Mitsuko, Yamada Ayami, Matsuo Miya, Habuka Hitoshi, Ishida Yuuki, Ikeda Shin-Ichi, Hara Shiro

مصطلحات موضوعية: Minimal Fab, Chemical vapour deposition reactor, Silicon, Trichlorosilane gas concentration, Wafer rotation

Relation: https://doi.org/10.1016/j.mssp.2018.07.006; https://ynu.repo.nii.ac.jp/?action=repository_uri&item_id=9821; http://hdl.handle.net/10131/00012488; Materials Science in Semiconductor Processing, 87, 13-18(2018-11-15); AA11350145; https://ynu.repo.nii.ac.jp/?action=repository_action_common_download&item_id=9821&item_no=1&attribute_id=20&file_no=1

الاتاحة: http://hdl.handle.net/10131/00012488
https://ynu.repo.nii.ac.jp/?action=repository_uri&item_id=9821
https://ynu.repo.nii.ac.jp/?action=repository_action_common_download&item_id=9821&item_no=1&attribute_id=20&file_no=1

المؤلفون: Partanen, Matti Tapani

المساهمون: Timmermans, Marina, Informaatio- ja luonnontieteiden tiedekunta, Kauppinen, Esko, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: chemical vapour deposition reactor, single-walled carbon nanotube, synthesis, thin film transistor

وصف الملف: 35 s.; application/pdf

Relation: https://aaltodoc.aalto.fi/handle/123456789/8629; URN:NBN:fi:aalto-201305165115

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/8629

المؤلفون: Irikura, Kenta, Muroi, Mitsuko, Yamada, Ayami, Matsuo, Miya, Habuka, Hitoshi, Ishida, Yuuki, Ikeda, Shin-Ichi, Hara, Shiro

مصطلحات الفهرس: Minimal Fab, Chemical vapour deposition reactor, Silicon, Trichlorosilane gas concentration, Wafer rotation, Journal Article, AM

URL: http://hdl.handle.net/10131/00012488
https://ynu.repo.nii.ac.jp/?action=repository_action_common_download&item_id=9821&item_no=1&attribute_id=20&file_no=1
https://doi.org/10.1016/j.mssp.2018.07.006
https://doi.org/10.1016/j.mssp.2018.07.006